METHOD FOR MANUFACTURING ELECTRONIC COMPONENT DEVICE AND ELECTRONIC COMPONENT DEVICE
Disclosed is a method for manufacturing an electronic component device, the method including, in the stated order: a step of disposing an IC chip and a chip-type passive component on a temporary fixing material layer of a carrier substrate, the passive component having a main body part and a connection part provided on an outer surface of the main body part, the connection part being interposed between the main body part and the temporary fixing material layer to form a gap between the main body part and the temporary fixing material layer; a step of forming a sealing layer sealing the IC chip and the passive component on the temporary fixing material layer by a sealing material containing a curable resin and a filler; a step of curing the sealing layer to form a sealed structure; and a step of peeling off the carrier substrate from the sealed structure. When a top cut particle diameter of the filler is designated as D and a width of the gap between the main body part and the temporary fixing material layer is designated as G, D/G is 1.5 or less.
1 . A method for manufacturing an electronic component device, the method comprising, in the stated order:
a step of preparing a carrier substrate comprising a support and a temporary fixing material layer provided on the support;
a step of disposing an IC chip and a chip-type passive component on the temporary fixing material layer, the passive component having a main body part and a connection part provided on an outer surface of the main body part, the connection part being interposed between the main body part and the temporary fixing material layer to form a gap between the main body part and the temporary fixing material layer;
a step of forming a sealing layer sealing the IC chip and the passive component on the temporary fixing material layer by a sealing material comprising a curable resin and a filler;
a step of curing the sealing layer to form a sealed structure having the IC chip, the passive component, and the cured sealing layer; and
a step of peeling off the carrier substrate from the sealed structure, wherein
when a top cut particle diameter of the filler is designated as D and a width of the gap between the main body part and the temporary fixing material layer is designated as G, D/G is 1.5 or less.
2 . The method according to claim 1 , wherein D is 30 μm or less.
3 . The method according to claim 1 , wherein G is 10 μm or less.
4 . The method according to claim 1 , wherein a maximum width of the passive component is 6500 μm or less.
5 . The method according to claim 1 , further comprising a step of forming a redistribution layer having a wiring connected to the IC chip and the connection part on one main surface side of the sealed structure after the step of peeling off the carrier substrate from the sealed structure.
6 . The method according to claim 5 , wherein the IC chip and the passive component that constitute each of a plurality of electronic component devices are disposed on the temporary fixing material layer of one sheet of the carrier substrate, and
the method further comprises a step of dividing the sealed structure and the redistribution layer into individual electronic component devices after the step of forming the redistribution layer.
7 . An electronic component device comprising:
a sealed structure having an IC chip, a chip-type passive component, and a sealing layer sealing the IC chip and the passive component; and
a redistribution layer provided on one main surface side of the sealed structure, wherein
the passive component has a main body part and a connection part provided on an outer surface of the main body part, and the redistribution layer has a wiring connected to the connection part,
the connection part is interposed between the main body part and the redistribution layer to form a gap between the main body part and the redistribution layer,
the sealing layer is a cured product of a sealing material containing a curable resin and a filler, and
when a top cut particle diameter of a particle diameter of the filler is designated as D and a width of the gap between the main body part and the redistribution layer is designated as G, D/G is 1.5 or less.
8 . The electronic component device according to claim 7 , wherein D is 30 μm or less.
9 . The electronic component device according to claim 7 , wherein G is 10 μm or less.
10 . The electronic component device according to claim 7 , wherein a maximum width of the passive component is 6500 μm or less.