FILM-LIKE ADHESIVE AND METHOD FOR EVALUATING EASE OF SPLITTING, DICING/DIE-BONDING INTEGRATED FILM AND METHOD FOR MANUFACTURING, AND SEMICONDUCTOR DEVICE
A method for evaluating an ease of splitting of a film-like adhesive under low-temperature conditions in which cooling expansion is performed, the method including: preparing a sample having a cross-sectional area A (mm 2 ) from a film-like adhesive; determining a breaking work W (N·mm), a breaking strength P (N), and a breaking elongation L (mm) of the sample by a break test under low-temperature conditions in a range of −15° C. to 0° C.; determining a breaking factor m of the sample expressed by Equation (1) below; and determining a breaking resistance R (N/mm 2 ) of the sample expressed by Equation (2) below; and evaluating the ease of splitting based on the determined the breaking factor m and the breaking resistance R, m=W /[1000×( P×L )] (1) R=P/A (2).
1 . A method for evaluating an ease of splitting of a film-like adhesive under low-temperature conditions in which cooling expansion is performed, the method comprising:
preparing a sample having a cross-sectional area A (mm 2 ) from the film-like adhesive;
determining a breaking work W (N·mm), a breaking strength P (N), and a breaking elongation L (mm) of the sample by a break test under low-temperature conditions in a range of −15° C. to 0° C.;
determining a breaking factor m of the sample expressed by:
m=W/ [1000×( P×L )];
determining a breaking resistance R (N/mm 2 ) of the sample expressed by:
R=P/A ; and
evaluating the ease of splitting based on the determined breaking factor m and the determined breaking resistance R.
2 . A method for manufacturing a dicing/die-bonding integrated film including a base layer, an adhesive layer having a first surface facing the base layer and a second surface opposite to the first surface, and a bonding adhesive layer provided on the second surface of the adhesive layer, the method comprising:
preparing a dicing film including the base layer and the adhesive layer;
selecting a film-like adhesive having a non-zero breaking factor m of 70 or less and a non-zero breaking resistance R of 40 N/mm 2 or less, for evaluating the ease of splitting according to claim 1 that is performed for the sample in which:
sample width equals 5 mm,
sample length equals 23 mm, and
a relative speed between a push jig and the sample equals 10 mm/min; and forming the bonding adhesive layer from the film-like adhesive on a surface of the dicing film facing the adhesive layer to obtain the dicing/die-bonding integrated film.
3 . A film-like adhesive to be applied to a manufacturing process of a semiconductor device in which cooling expansion is performed,
the film-like adhesive having a non-zero breaking factor m of 70 or less and a non-zero breaking resistance R of 40 N/mm 2 or less for evaluating the ease of splitting according to claim 1 that is performed for the sample in which:
sample width equals 5 mm,
sample length equals 23 mm, and
a relative speed between a push jig and the sample equals 10 mm/min.
4 . A dicing/die-bonding integrated film comprising:
a base layer;
an adhesive layer having a first surface facing the base layer and a second surface opposite to the first surface; and
a bonding adhesive layer provided on the second surface of the adhesive layer, wherein the bonding adhesive layer is formed from the film-like adhesive according to claim 3 .
5 . A semiconductor device comprising the film-like adhesive according to claim 3 .