Susceptor for a chemical vapor deposition reactor
A susceptor used in a deposition reactor provides heat input and controls the build-up of errant deposition. The susceptor heats a substrate tape within the reactor upon which one or more thin films are deposited, particularly high temperature superconductor (HTS) thin films produced in a MOCVD reactor.
1 . A susceptor system ( 200 ) for heating and temperature control of a substrate tape ( 120 ) and for the control of errant deposition build-up ( 180 ) within a deposition apparatus, the susceptor system ( 200 ) comprising:
a susceptor;
a substrate tape disposed above and in contact with the susceptor;
a main body ( 210 ) forming a base of the susceptor ( 200 ); and
two or more adjacent raised sections ( 220 ) each extending vertically from the upper surface of the main body ( 210 ) and lengthwise along the length of the main body ( 210 ) with the top ( 224 ) of each raised section having a width substantially the same or less than the width of the substrate tape ( 120 ),
wherein each raised section ( 220 ) is separated by a gap ( 230 ) from an adjacent raised section ( 220 ), and
wherein the gap ( 230 ) separating adjacent raised sections ( 220 ) forms a channel ( 240 ) to collect errant deposition material ( 180 ).
2 . The susceptor system of claim 1 , wherein the main body further comprises sidewalls angled inwardly to form a trapezoidal cross section.
3 . The susceptor system of claim 1 , wherein the top surface of raised section curved in the lengthwise direction of the susceptor such that the vertical height of raised section is greater at the center of the susceptor than at the ends of the susceptor.
4 . The susceptor system of claim 1 , wherein the channel cross-sectional area is rectilinear in shape.
5 . A susceptor system ( 610 ) for heating and temperature control of a substrate tape ( 120 ) and for the control of errant deposition build-up ( 180 ) within a deposition apparatus, the susceptor system ( 610 ) comprising:
a susceptor;
a substrate tape disposed above and in contact with the susceptor;
a main body ( 210 ) forming a base of the susceptor ( 610 ); and
two or more adjacent raised sections ( 220 ) each extending vertically from the upper surface of the main body ( 210 ) and lengthwise along the length of the main body ( 210 ),
wherein the top ( 224 ) of each raised section ( 220 ) further comprises two or more support ridges ( 620 ) configured to elevate substrate tape ( 120 ) such that the bottom of said substrate tape ( 120 ) does not contact the raised section ( 220 ) top surface ( 630 ), and
wherein the distance between outermost edges of two support ridges ( 620 ) of each raised section ( 220 ) is substantially the same or less than the width of the substrate tape ( 120 ), and
wherein each raised section ( 220 ) is separated by a gap ( 230 ) from an adjacent raised section ( 220 ), and
wherein the gap ( 230 ) separating adjacent raised sections ( 220 ) forms a channel ( 240 ) to collect errant deposition material ( 180 ).
6 . The susceptor system of claim 5 , wherein the main body further comprises sidewalls angled inwardly to form a trapezoidal cross section.
7 . The susceptor system of claim 5 , wherein the top surface of raised section curved in the lengthwise direction of the susceptor such that the vertical height of raised section is greater at the center of the susceptor than at the ends of the susceptor.
8 . The susceptor system of claim 5 , wherein the space between the bottom of the substrate tape and the top of raised section contains an inert gas.
9 . A susceptor system ( 600 ) for heating and temperature control of a substrate tape ( 120 ) within a deposition apparatus, the susceptor system ( 600 ) comprising:
a susceptor;
a substrate tape disposed above and in contact with the susceptor;
a main body ( 210 ) forming a base of the susceptor ( 600 ); and
two or more support ridges ( 620 ) located on the upper surface of the main body and are configured to elevate the substrate tape ( 120 ) such that the bottom of said substrate tape ( 120 ) does not contact the upper surface of the main body of the susceptor ( 600 ).
10 . The susceptor system of claim 9 , wherein the main body further comprises sidewalls angled inwardly to form a trapezoidal cross section.
11 . The susceptor system of claim 9 , wherein the top surface of the susceptor is curved in the lengthwise direction to provide tension to the substrate tape such that the vertical height at the center of the susceptor is greater than the ends of the susceptor.
12 . The susceptor system of claim 9 , wherein the space between the bottom of the substrate tape and the top of the main body of the susceptor contains an inert gas.
13 . A system ( 800 ) for heating and temperature control of a substrate tape ( 120 ) and control of errant deposition build-up ( 180 ) within a chemical vapor deposition apparatus, the system ( 800 ) comprising:
a chemical vapor deposition apparatus ( 810 ) comprising a reactor housing ( 820 ) having an inlet ( 830 ) for a precursor ( 834 ) and a vacuum exhaust ( 840 );
a susceptor ( 200 / 600 / 610 ) located within the reactor housing ( 820 );
a substrate tape ( 120 ) configured to translate along the top the susceptor ( 200 / 610 ) and through the reactor housing ( 820 );
a heater ( 850 ) operatively coupled to the susceptor ( 200 / 600 / 610 );
wherein the susceptor further comprises a main body ( 210 ) and at least one raised section ( 220 ) extending vertically from the upper surface of the main body ( 210 ) and lengthwise along the length of the main body ( 210 ) with the top ( 224 ) of each raised section having a width substantially the same or less than the width of the substrate tape ( 120 ); and
wherein the susceptor ( 200 / 600 / 610 ) further comprises a channel ( 240 ) configured for collection of errant deposition build-up ( 180 ).
14 . The system of claim 13 , wherein each of the at least one raised section ( 220 ) further comprises two or more support ridges ( 620 ) configured to elevate substrate tape ( 120 ) such that the bottom of said substrate tape ( 120 ) does not contact the raised section ( 220 ).
15 . The system of claim 14 , wherein the distance between outermost edges of two support ridges ( 620 ) of each of at least one raised section ( 220 ) is substantially the same or less than the width of the substrate tape ( 120 ).
16 . The system of claim 14 , wherein the space between the bottom of the substrate tape and the top of each of at least one raised section contains an inert gas.
17 . The system of claim 13 , wherein the channel cross-sectional area is rectilinear in shape.
18 . The system of claim 13 , wherein the top surface of each of the at least one raised section is curved in the lengthwise direction of the susceptor such that the vertical height is greater at the center of the susceptor than at the ends of the susceptor.
19 . The system of claim 13 , wherein the susceptor main body further comprises sidewalls angled inwardly to form a trapezoidal cross section.