CMP POLISHING LIQUID AND POLISHING METHOD
An aspect of the present disclosure provides a CMP polishing liquid containing: abrasive grains; and a cationic polymer, in which the cationic polymer has a main chain containing a nitrogen atom and a carbon atom and a hydroxyl group bonded to the carbon atom. The CMP polishing liquid may further contain at least one cyclic compound selected from the group consisting of an amino group-containing aromatic compound and a nitrogen-containing heterocyclic compound. Another aspect of the present disclosure provides a polishing method including a step of polishing a material to be polished by using this CMP polishing liquid.
1 . A CMP polishing liquid comprising: abrasive grains; and a cationic polymer, wherein
the cationic polymer has a main chain containing a nitrogen atom and a carbon atom and a hydroxyl group bonded to the carbon atom.
2 . The CMP polishing liquid according to claim 1 , wherein the cationic polymer includes a plurality of kinds of structure units each having the main chain.
3 . The CMP polishing liquid according to claim 1 , wherein the cationic polymer contains a reaction product of a raw material containing at least dimethylamine and epichlorohydrin.
4 . The CMP polishing liquid according to claim 3 , wherein the cationic polymer contains a reaction product of a raw material containing at least dimethylamine, ammonia, and epichlorohydrin.
5 . The CMP polishing liquid according to claim 1 , wherein a weight average molecular weight of the cationic polymer is 10000 to 1000000.
6 . The CMP polishing liquid according to claim 1 , wherein a content of the cationic polymer is 0.00001 to 1 part by mass with respect to 100 parts by mass of the CMP polishing liquid.
7 . The CMP polishing liquid according to claim 1 , wherein the abrasive grains contain a cerium-based compound.
8 . The CMP polishing liquid according to claim 7 , wherein the cerium-based compound is cerium oxide.
9 . The CMP polishing liquid according to claim 1 , wherein a content of the abrasive grains is 0.01 to 10 parts by mass with respect to 100 parts by mass of the CMP polishing liquid.
10 . The CMP polishing liquid according to claim 1 , further comprising at least one cyclic compound selected from the group consisting of an amino group-containing aromatic compound and a nitrogen-containing heterocyclic compound.
11 . The CMP polishing liquid according to claim 10 , wherein the cyclic compound contains the amino group-containing aromatic compound, and
the amino group-containing aromatic compound contains a compound having an amino group and at least one selected from the group consisting of a carboxy group and a carboxylate group, as a functional group bonded to an aromatic ring.
12 . The CMP polishing liquid according to claim 10 , wherein the cyclic compound contains the nitrogen-containing heterocyclic compound, and
the nitrogen-containing heterocyclic compound contains a compound having a pyridine ring.
13 . The CMP polishing liquid according to claim 12 , wherein the nitrogen-containing heterocyclic compound contains at least one selected from the group consisting of pyridinecarboxylic acid, 1-(2-pyridinyl)-1-ethanone, and pyridine-3-carboxamide.
14 . The CMP polishing liquid according to claim 10 , wherein a content of the cyclic compound is 0.001 to 1 part by mass with respect to 100 parts by mass of the CMP polishing liquid.
15 . The CMP polishing liquid according to claim 1 , wherein a pH is 8.0 or less.
16 . The CMP polishing liquid according to claim 1 , wherein a pH is 2.0 to 5.0.
17 . The CMP polishing liquid according to claim 1 , wherein the CMP polishing liquid is used for polishing an insulating material.
18 . The CMP polishing liquid according to claim 17 , wherein the insulating material contains silicon oxide.
19 . A polishing method comprising a step of polishing a material to be polished by using the CMP polishing liquid according to claim 1 .
20 . The polishing method according to claim 19 , wherein the material to be polished contains silicon oxide.