Photosensitive resin composition, method for selecting photosensitive resin composition, method for producing patterned cured film, and method for producing semiconductor device
method for selecting a photosensitive resin composition exposing a resin film of a photosensitive resin composition at 100 to 2000 mJ/cm2 and heat-treating the resin film at 150° C. to 5 250° C. for 1 to 3 hours under nitrogen to produce a strip sample of a cured film having a film thickness of 10 μm and a width of 10 mm; performing a fatigue test of repeatedly pulling the strip sample under specific conditions; and selecting a photosensitive resin composition satisfying the following condition: the number of times of pulling required until the 15 strip sample breaks in the fatigue test is 100 or more cycles.
1. A method for selecting a photosensitive resin composition, the method comprising:
exposing a resin film of a photosensitive resin composition at 100 to 2000 mJ/cm 2 and heat-treating the resin film at 150° C. to 250° C. for 1 to 3 hours under nitrogen to produce a strip sample of a cured film having a film thickness of 10 μm and a width of 10 mm;
performing a fatigue test of repeatedly pulling the strip sample under the conditions including a set temperature of 25° C., a distance between chucks of 20 mm, a testing rate of 5 mm/min, and a cyclic load stress of 100 MPa; and
selecting a photosensitive resin composition satisfying the following condition: a number of times of pulling required until the strip sample breaks in the fatigue test is 100 or more cycles.
2. The method for selecting a photosensitive resin composition according to claim 1 , wherein in a tensile test of pulling the strip sample that has been subjected to 100 cycles of the fatigue test, under the conditions including a set temperature of 25° C., a distance between chucks of 20 mm, and a testing rate of 5 mm/min, a breaking elongation ratio of the strip sample is 10% to 60%.
3. The method for selecting a photosensitive resin composition according to claim 2 , wherein a yield stress of the strip sample in the tensile test is 120 to 200 MPa.
4. The method for selecting a photosensitive resin composition according to claim 2 , wherein a Young's modulus of the strip sample in the tensile test is 0.5 to 2.8 GPa.
5. The method for selecting a photosensitive resin composition according to claim 1 , wherein a glass transition temperature of the cured film is 150° C. or higher.
6. A method for selecting a photosensitive resin composition, the method comprising:
exposing a resin film of a photosensitive resin composition at 100 to 2000 mJ/cm 2 and heat-treating the resin film at 150° C. to 250° C. for 1 to 3 hours under nitrogen to produce a strip sample of a cured film having a film thickness of 10 μm and a width of 10 mm;
performing a fatigue test of repeatedly pulling the strip sample under the conditions including a set temperature of −55° C., a distance between chucks of 20 mm, a testing rate of 5 mm/min, and a cyclic load stress of 120 MPa; and
selecting a photosensitive resin composition satisfying the following condition: a number of times of pulling required until the strip sample breaks in the fatigue test is 100 or more cycles.
7. The method for selecting a photosensitive resin composition according to claim 6 , wherein in a tensile test of pulling a strip sample that has been subjected to 100 cycles of the fatigue test, under the conditions including a set temperature of 25° C., a distance between chucks of 20 mm, and a testing rate of 5 mm/min, a breaking elongation ratio of the strip sample is 10% to 60%.
8. The method for selecting a photosensitive resin composition according to claim 7 , wherein a yield stress of the strip sample in the tensile test is 120 to 200 MPa.
9. The method for selecting a photosensitive resin composition according to claim 7 , wherein a Young's modulus of the strip sample in the tensile test is 0.5 to 2.8 GPa.
10. The method for selecting a photosensitive resin composition according to claim 7 , wherein a glass transition temperature of the cured film is 150° C. or higher.
11. A method for producing a patterned cured film, the method comprising:
a step of applying a photosensitive resin composition selected by the method for selecting a photosensitive resin composition according to claim 1 on a portion or the entire surface of a substrate and drying the photosensitive resin composition to form a resin film;
a step of exposing at least a portion of the resin film;
a step of developing the resin film after exposure to form a patterned resin film; and
a step of heating the patterned resin film.
12. A method for producing a semiconductor device that includes a patterned cured film formed by the method for producing a patterned cured film according to claim 11 as an interlayer insulating layer or a surface protective layer.
13. A method for producing a patterned cured film, the method comprising:
a step of applying a photosensitive resin composition selected by the method for selecting a photosensitive resin composition according to claim 6 on a portion or the entire surface of a substrate and drying the photosensitive resin composition to form a resin film;
a step of exposing at least a portion of the resin film;
a step of developing the resin film after exposure to form a patterned resin film; and
a step of heating the patterned resin film.
14. A method for producing a semiconductor device that includes a patterned cured film formed by the method for producing a patterned cured film according to claim 13 as an interlayer insulating layer or a surface protective layer.