Semiconductor device and method of disposing electrical components over side surfaces of interconnect substrate
A semiconductor device has an interconnect substrate with a conductive via. A first electrical component is disposed over a major surface of the interconnect substrate. An electrical interconnect compound is disposed over the conductive via exposed from a side surface of the interconnect substrate. The electrical interconnect compound can be applied with a tilt nozzle oriented at an angle. A second electrical component is disposed on the electrical interconnect compound on the conductive via exposed from the side surface of the interconnect substrate. A plurality of second electrical components can be disposed on two or more side surfaces of the interconnect substrate. The interconnect substrate can have a plurality of stacked conductive vias and the second electrical component is disposed over the stacked conductive vias. An encapsulant is deposited over the first electrical component and interconnect substrate. A shielding layer can be formed over the encapsulant.
1. A semiconductor device, comprising:
an interconnect substrate including a conductive layer internal to the interconnect substrate, wherein the conductive layer includes a first conductive via exposed from a side surface of the interconnect substrate;
a first electrical component disposed over a major surface of the interconnect substrate; and
a second electrical component disposed in contact with the first conductive via on the side surface of the interconnect substrate.
2. The semiconductor device of claim 1 , further including an electrical interconnect compound disposed over the first conductive via exposed from the side surface of the interconnect substrate.
3. The semiconductor device of claim 1 , further including a plurality of second electrical components disposed on two or more side surfaces of the interconnect substrate.
4. The semiconductor device of claim 1 , wherein the first conductive via includes a plurality of stacked conductive vias and the second electrical component is disposed in contact with the stacked conductive vias.
5. The semiconductor device of claim 1 , further including an encapsulant deposited over the first electrical component and interconnect substrate.
6. The semiconductor device of claim 5 , further including a shielding layer formed over the encapsulant.
7. The semiconductor device of claim 1 , wherein the first conductive via extends from a first surface of the interconnect substrate to a second surface of the interconnect substrate opposite the first surface of the interconnect substrate.
8. The semiconductor device of claim 1 , wherein the conductive layer further includes a second conductive via vertically and laterally offset from the first conductive via.
9. A semiconductor device, comprising:
a substrate including a first conductive via exposed from a side surface of the substrate and a second conductive via exposed from the side surface of the substrate;
a first electrical component disposed over a major surface of the substrate; and
a second electrical component disposed over the first conductive via and second conductive via on the side surface of the substrate.
10. The semiconductor device of claim 9 , further including an electrical interconnect compound disposed over the side surface of the substrate.
11. The semiconductor device of claim 9 , further including a plurality of second electrical components disposed over two or more side surfaces of the substrate.
12. The semiconductor device of claim 9 , wherein providing the substrate includes:
forming a conductive layer internal to the substrate, wherein the the first conductive via is part of the conductive layer; and
disposing the second electrical component is disposed over the first conductive via.
13. The semiconductor device of claim 9 , wherein the substrate includes a plurality of stacked conductive vias and the second electrical component is disposed over the stacked conductive vias.
14. The semiconductor device of claim 9 , further including an encapsulant deposited over the first electrical component and substrate.
15. The semiconductor device of claim 14 , further including a shielding layer formed over the encapsulant.
16. The semiconductor device of claim 9 , wherein the first conductive via extends from a first surface of the substrate to a second surface of the substrate opposite the first surface of the substrate.
17. The semiconductor device of claim 9 , wherein the substrate includes a second conductive via vertically and laterally offset from the first conductive via.
18. A method of making a semiconductor device, comprising:
providing an interconnect substrate including a conductive layer internal to the interconnect substrate, wherein the conductive layer includes a first conductive via exposed from a side surface of the interconnect substrate;
disposing a first electrical component over a major surface of the interconnect substrate; and
disposing a second electrical component over the first conductive via exposed from a side surface of the interconnect substrate.
19. The method of claim 18 , further including disposing an electrical interconnect compound over the first conductive via exposed from the side surface of the interconnect substrate.
20. The method of claim 18 , further including disposing a plurality of second electrical components over two or more side surfaces of the interconnect substrate.
21. The method of claim 18 , wherein providing the interconnect substrate includes:
forming a plurality of stacked conductive vias through the interconnect substrate; and
disposing the second electrical component over the stacked conductive vias.
22. The method of claim 18 , further including depositing an encapsulant over the first electrical component and interconnect substrate.
23. The method of claim 22 , further including forming a shielding layer over the encapsulant.
24. The method of claim 18 , wherein the first conductive via extends from a first surface of the interconnect substrate to a second surface of the interconnect substrate opposite the first surface of the interconnect substrate.
25. The method of claim 18 , wherein the conductive layer further includes a second conductive via vertically and laterally offset from the first conductive via.
26. A method of making a semiconductor device, comprising:
providing a substrate including a first conductive via exposed from a side surface of the substrate and a second conductive via exposed from the side surface of the substrate;
disposing a first electrical component over a major surface of the substrate; and
disposing a second electrical component over the first conductive via and second conductive via on the side surface of the substrate.
27. The method of claim 26 , further including disposing an electrical interconnect compound over the side surface of the substrate.
28. The method of claim 26 , further including disposing a plurality of second electrical components over two or more side surfaces of the substrate.
29. The method of claim 26 , further including depositing an encapsulant over the first electrical component and substrate.
30. The method of claim 29 , further including forming a shielding layer over the encapsulant.
31. The method of claim 26 , wherein the first conductive via extends from a first surface of the substrate to a second surface of the substrate opposite the first surface of the substrate.
32. The method of claim 26 , wherein the substrate includes a second conductive via vertically and laterally offset from the first conductive via.