IP Library Granted Patent US 12,414,238
Granted Patent B2
US 12,414,238 · App. 17/816,144 · Granted Sep 9, 2025

Substrate structures and methods of manufacture

Inventors: Yusheng Lin (Phoenix, AZ); Sadamichi Takakusaki (Ota, JP)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H05K3/06C04B37/021H01L21/4807H01L21/4857H01L21/4871H01L23/142H01L23/15H01L23/3735H05K1/0306H05K1/0313H05K1/036H05K1/056H05K1/09H05K3/0011H05K3/064H05K3/4644C04B2237/34C04B2237/343C04B2237/402C04B2237/406C04B2237/407C04B2237/52C04B2237/64C04B2237/82H01L23/49822H01L2924/0002H05K3/0058H05K3/0064H05K3/0067H05K3/20H05K3/202H05K2201/09736
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Quick Facts
Patent No.
US 12,414,238
App. No.
17/816,144
Granted
Sep 9, 2025
Kind
B2
Abstract

A power electronic substrate includes a metallic baseplate having a first and second surface opposing each other. An electrically insulative layer also has first and second surfaces opposing each other, its first surface coupled to the second surface of the metallic baseplate. A plurality of metallic traces each include first and second surfaces opposing each other, their first surfaces coupled to the second surface of the electrically insulative layer. At least one of the metallic traces has a thickness measured along a direction perpendicular to the second surface of the metallic baseplate that is greater than a thickness of another one of the metallic traces also measured along a direction perpendicular to the second surface of the metallic baseplate. In implementations the electrically insulative layer is an epoxy or a ceramic material. In implementations the metallic traces are copper and are plated with a nickel layer at their second surfaces.

Claims (41)

1. A power electronic substrate, comprising:

a plurality of copper traces coupled to a first dielectric layer, wherein the plurality of copper traces comprise a first thickness and a second thickness measured perpendicularly to the first dielectric layer;

a ceramic layer comprising a first side and a second side, wherein the first side of the ceramic layer is coupled to the first dielectric layer;

a second dielectric layer coupled to the second side of the ceramic layer; and

a metallic baseplate coupled to the second dielectric layer;

wherein the ceramic layer comprises two different thicknesses, a first surface of the ceramic layer comprising a step therein;

wherein the first dielectric layer covers a first portion of the first surface of the ceramic layer and a second portion of the first surface of the ceramic layer; and

wherein the step in the first surface separates the first portion from the second portion.

2. The substrate of claim 1 , wherein the first dielectric layer and the second dielectric layer comprise one of an epoxy or a resin.

3. The substrate of claim 1 , wherein the first dielectric layer and the second dielectric layer are between 25-300 micrometers thick.

4. The substrate of claim 1 , wherein the plurality of copper traces further comprises a third thickness different in magnitude from the first thickness and the second thickness, the third thickness measured perpendicularly to the first dielectric layer.

5. The substrate of claim 1 , further comprising a plurality of nickel traces plated onto the plurality of copper traces.

6. The substrate of claim 1 , further comprising a third dielectric layer coupled to the plurality of copper traces and a second plurality of copper traces coupled to the third dielectric layer.

7. The substrate of claim 1 , further comprising bonding patterns in one of the first dielectric layer, the second dielectric layer, or both the first dielectric layer and the second dielectric layer.

8. The substrate of claim 7 , wherein the bonding patterns comprise one of bonding ridges, conical projections, or pyramidal projections.

9. A power electronic substrate, comprising:

a plurality of metallic traces coupled to a first dielectric layer, wherein the plurality of metallic traces comprise a first thickness and a second thickness measured perpendicularly to the first dielectric layer;

a ceramic layer comprising a first side and a second side, wherein the first side of the ceramic layer is coupled to the first dielectric layer;

a second dielectric layer coupled to the second side of the ceramic layer; and

a metallic baseplate coupled to the second dielectric layer;

wherein the ceramic layer comprises a recess formed in the first side; and

wherein a portion of the plurality of metallic traces are coupled within the recess.

10. The substrate of claim 9 , further comprising bonding patterns in one of the first dielectric layer, the second dielectric layer, and both the first dielectric layer and the second dielectric layer.

11. The substrate of claim 10 , wherein the bonding patterns comprise one of bonding ridges, conical projections, and pyramidal projections.

12. The substrate of claim 9 , wherein the first dielectric layer and the second dielectric layer are between 25-300 micrometers thick.

13. The substrate of claim 9 , wherein the plurality of metallic traces further comprises a third thickness different in magnitude from the first thickness and the second thickness, the third thickness measured perpendicular to the first dielectric layer.

14. The substrate of claim 9 , further comprising a plurality of nickel traces plated onto the plurality of metallic traces.

15. The substrate of claim 9 , further comprising a third dielectric layer coupled to the plurality of metallic traces and a second plurality of metallic traces coupled to the third dielectric layer.

16. A power electronic substrate, comprising:

a plurality of metallic traces coupled to a first dielectric layer, wherein the plurality of metallic traces comprise a first thickness and a second thickness measured perpendicularly to the first dielectric layer;

a ceramic layer comprising a first surface and a second surface, wherein the first surface of the ceramic layer is coupled to the first dielectric layer;

a second dielectric layer coupled to the second surface of the ceramic layer; and

a metallic baseplate coupled to the second dielectric layer;

wherein the ceramic layer comprises two different thicknesses, the first surface of the ceramic layer comprising a step therein;

wherein the first dielectric layer covers a first portion of the first surface of the ceramic layer and a second portion of the first surface of the ceramic layer;

wherein the step in the first surface separates the first portion from the second portion; and

wherein a metallic trace of the plurality of metallic traces overlies the step.

17. The substrate of claim 16 , wherein the plurality of metallic traces further comprises a third thickness different in magnitude from the first thickness and the second thickness, the third thickness measured perpendicularly to the first dielectric layer.

18. The substrate of claim 16 , further comprising a plurality of nickel traces plated onto the plurality of metallic traces.

19. The substrate of claim 16 , further comprising bonding patterns in one of the first dielectric layer, the second dielectric layer, or both the first dielectric layer and the second dielectric layer.

20. The substrate of claim 19 , wherein the bonding patterns comprise one of bonding ridges, conical projections, or pyramidal projections.

Assignments (4)
SECURITY INTEREST Recorded Jul 13, 2023
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; GTAT CORPORATION
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064271/0971 →
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 061879, FRAME 0655 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: FAIRCHILD SEMICONDUCTOR CORPORATION; SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 064123/0001 →
SECURITY INTEREST Recorded Nov 3, 2022
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 061879/0655 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2022
From: LIN, YUSHENG; TAKAKUSAKI, SADAMICHI
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 060673/0394 →