Over temperature protection with soft shutdown for power amplifier
Various methods and circuital arrangements for protection of a power amplifier from over temperature are presented. According to one aspect, a protection circuit coupled to a temperature sensor controls a biasing current or voltage to the power amplifier to limit a power dissipation through, and therefore a temperature of, the power amplifier when a high limit temperature is sensed. When the high limit temperature is sensed, the biasing current or voltage decreases as a linear function of the sensed temperature while allowing the power amplifier to operate. A slope of the linear function and a value of the high limit temperature can be made programmable. Programmability of the slope and the high limit temperature can be used to control biasing currents or voltages to a plurality of power amplifiers operating at different times and having different thermal requirements.
1 . A circuit comprising:
a bias circuit configured to supply a bias signal to an amplifier based on a control current;
a temperature sensor configured to sense a temperature that includes a temperature variation that is based on external parameters to the amplifier and is independent from an output power of the amplifier; and
a protection circuit configured to detect a temperature sensed by the temperature sensor and generate therefrom the control current,
wherein for a detected temperature that is:
i) lower than a preset high temperature limit, the control current is constant, and
ii) higher than the preset high temperature limit, the control current is a linear function of the detected temperature having a negative slope with respect to increasing values of the detected temperature.
2 . The circuit of claim 1 , wherein
the circuit further comprises an amplifier, and
the bias circuit is configured to supply the bias signal to the amplifier.
3 . The circuit of claim 2 , wherein the detected temperature is a local temperature that is sensed by the temperature sensor that is located at close proximity to the amplifier.
4 . The circuit of claim 2 , wherein the detected temperature is an ambient temperature that is sensed by the temperature sensor that is located distal the amplifier.
5 . The circuit of claim 2 , wherein the bias circuit comprises an emitter follower transistor that is configured to supply the bias signal to the amplifier.
6 . The circuit of claim 5 , wherein the control current is provided to a collector of the emitter follower transistor.
7 . The circuit of claim 5 , wherein the control current is provided to a base of the emitter follower transistor.
8 . The circuit of claim 2 , wherein
the amplifier comprises a cascode stack of series connected FET transistors, and
a voltage that is proportional to the control current is provided to a gate of an input transistor of the cascode stack.
9 . The circuit of claim 2 , wherein
the amplifier comprises a first amplification stage,
a bias current through the first amplification stage is based on the bias signal, and
the bias signal is configured to control power dissipation through the first amplification stage to be below a thermal breakdown limit of the first amplification stage.
10 . The circuit of claim 2 , wherein the control current is based on a combination of:
a reference current that is generated by a reference current source that is independent from the detected temperature, the reference current being constant, and
a sink current, wherein for a detected temperature that is:
i) lower than the preset high temperature limit, the sink current is zero, and
ii) higher than the preset high temperature limit, the sink current is a linear function of the detected temperature having a positive slope with respect to increasing values of the detected temperature, the positive slope having a same magnitude as the negative slope of the control current.
11 . The circuit of claim 10 , wherein the control current is based on a subtraction of the sink current from the reference current.
12 . The circuit of claim 10 , wherein the protection circuit comprises:
a first current source that is configured to generate a current that is proportional to the detected temperature;
a second current source in series connection with the first current source; and
a first current mirror comprising a reference current leg and a target current leg, the reference current leg in series connection with one of the first current source or the second current source,
wherein when the detected temperature is higher than the preset high temperature limit, a nonzero current that is based on a difference between a current generated by the first current source and a current generated by the second current source flows through the reference current leg of the first current mirror, else no current flows through the reference current leg, and
wherein the sink current flows through the target current leg of the first current mirror.
13 . The circuit of claim 12 , wherein the current generated by the second current source is programmable and based on a value of the preset high temperature limit.
14 . The circuit of claim 12 , wherein a ratio of a current through the target current leg with respect to a current through the reference current leg of the first current mirror provides the positive slope.
15 . The circuit of claim 14 , wherein the ratio is programmable.
16 . The circuit of claim 10 , wherein:
the temperature sensor is configured to output a detected temperature voltage based on a characteristic response curve of the temperature sensor; and
the protection circuit further comprises an error amplifier having a first input terminal coupled to the detected temperature voltage and a second input terminal coupled to a reference limit voltage that corresponds to the preset high temperature limit in the characteristic response curve; and
a first current source coupled to an output of the error amplifier, the first current source configured to generate the sink current based on a difference between the detected temperature voltage and the reference limit voltage.
17 . The circuit of claim 9 , wherein
the amplifier comprises a second amplification stage that is in a cascaded arrangement with the first amplification stage, and
a bias current through the second amplification stage is based on the bias signal.
18 . The circuit of claim 2 , further comprising additional one or more amplifiers and additional respective one or more bias circuits configured to supply respective bias signals,
wherein at any given time, the circuit processes an RF signal through one only of the amplifier and the additional one or more amplifiers, and
wherein protection circuit is further configured to generate, based on the detected temperature, the control current based on an amplifier-specific preset high temperature limit and negative slope of the control current.
19 . The circuit of claim 18 , wherein the detected temperature is an ambient temperature.
20 . The circuit of claim 1 , wherein the circuit is monolithically integrated.
21 . The circuit of claim 1 , wherein the circuit is monolithically integrated together with the temperature sensor.
22 . A power amplifier module comprising the circuit of claim 1 .
23 . A method for controlling a current through an amplifier, the method comprising:
controlling a current to the amplifier based on a detected value of a temperature of the amplifier, such that for detected values of the temperature above a preset temperature limit, the current to the amplifier decreases linearly with respect to increasing detected values of the temperature, and
based on the controlling, reducing a power dissipated through the amplifier for the detected values of the temperature above the preset temperature limit,
wherein the temperature includes a temperature variation that is based on external parameters to the amplifier and is independent from an output power of the amplifier.