IP Library › Granted Patent US 10,090,811
Granted Patent B2
US 10,090,811 · App. 14/946,073 · Granted Oct 2, 2018

System and method for power amplifier over-voltage protection

Inventors: David Steven Ripley (Marion, IA); Joel Anthony Penticoff (Cedar Rapids, IA)
Assignee: Skyworks Solutions, Inc.
H03F1/523H03F1/0261H03F1/52H03F3/193H03F3/195H03F3/21H03F3/24H03F3/72H03G1/0088H04B1/0466H04B1/3827H03F2200/408H03F2200/451H03F2200/471H04B2001/0408
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Quick Facts
Patent No.
US 10,090,811
App. No.
14/946,073
Granted
Oct 2, 2018
Kind
B2
Abstract

A system for power amplifier over-voltage protection includes a power amplifier configured to receive a system voltage, a bias circuit configured to provide a bias signal to the power amplifier, and a power amplifier over-voltage circuit configured to interrupt the bias signal when the system voltage exceeds a predetermined value, while the system voltage remains coupled to the power amplifier.

Claims (31)

1. A power amplifier system with overvoltage protection, the power amplifier system comprising:

a power amplifier configured to receive a system voltage and to amplify a radio frequency signal;

a bias circuit including a transistor configured to provide a bias signal to the power amplifier so as to enable the power amplifier when the transistor is on; and

a power amplifier over-voltage circuit operatively coupled to the bias circuit, the power amplifier over-voltage circuit configured to receive the system voltage from a battery, to detect an over-voltage condition indicating that a battery voltage of the battery exceeds a threshold value, and to forward bias a second transistor in response to the over-voltage condition to cause a level of the bias signal provided to the power amplifier to be reduced.

2. The power amplifier system of claim 1 wherein the transistor that is arranged to adjust the level of the bias signal while the power amplifier is enabled based on an indication of power of the amplified radio frequency signal.

3. The power amplifier system of claim 2 further comprising a comparator configured to generate an error signal based on a comparison of a power control signal with the indication of power of the amplified radio frequency signal, and the bias circuit is configured to adjust the level of the bias signal based on the error signal.

4. The power amplifier system of claim 1 wherein the power amplifier includes a bipolar power amplifier transistor having a collector configured to receive the system voltage and to provide the amplified radio frequency signal, a base configured to receive the bias signal, and an emitter.

5. The power amplifier system of claim 1 wherein the power amplifier includes a gallium arsenide transistor.

6. The power amplifier system of claim 1 wherein the power amplifier over-voltage circuit is configured to disable the power amplifier responsive to the over-voltage condition.

7. The power amplifier system of claim 1 wherein the second transistor is a bipolar pulldown transistor configured to cause the power amplifier to be disabled in response to the over-voltage condition, and the second transistor includes a collector connected to a control terminal of the transistor.

8. The power amplifier system of claim 1 wherein the bias circuit includes a native n-type field effect transistor.

9. The power amplifier system of claim 1 wherein the bias circuit includes an n-type metal semiconductor field effect transistor.

10. A cellular telephone comprising the power amplifier system of claim 1 .

11. The power amplifier system of claim 1 further comprising an inductor coupled between the battery and the power amplifier.

12. The power amplifier system of claim 1 wherein the power amplifier over-voltage circuit is configured to receive a transmit enable signal.

13. A power amplifier system with overvoltage protection, the power amplifier system comprising:

a power amplifier configured to receive a system voltage from a battery and to provide an amplified radio frequency signal at an output;

a bias circuit configured to provide a bias signal to the power amplifier;

a feedback path from the output of the power amplifier to the bias circuit, the feedback path including a comparator, and the bias circuit configured to adjust a level of the bias signal based on an output from the comparator while the power amplifier is enabled; and

a power amplifier over-voltage circuit operatively coupled to the bias circuit, the power amplifier over-voltage circuit configured to forward bias a transistor responsive to detecting an over-voltage condition indicating that a battery voltage of the battery exceeds a predetermined voltage level to thereby cause the power amplifier to be disabled.

14. The power amplifier system of claim 13 wherein the power amplifier over-voltage circuit has an input electrically coupled to an input of the comparator of the feedback path.

15. The power amplifier system of claim 13 wherein the comparator is configured to compare an indication of power of the amplified radio frequency signal with a transmit enable signal.

16. The power amplifier system of claim 15 further comprising a baseband subsystem configured to provide the transmit enable signal to the comparator.

17. The power amplifier system of claim 13 wherein the power amplifier includes a gallium arsenide bipolar power amplifier transistor.

18. An electronically implemented method of power amplifier over-voltage protection, the method comprising:

biasing a power amplifier with a bias signal provided by a bias circuit while the power amplifier amplifies a radio frequency signal, the power amplifier receiving a system voltage from a battery;

determining, with a power amplifier over-voltage circuit that receives the system voltage, that a battery voltage of the battery exceeds a predetermined value; and

while the power amplifier remains coupled to the system voltage, reducing a level of the bias signal provided to the power amplifier by forward biasing a second transistor to cause a transistor of the bias circuit to turn off responsive to said determining to thereby disable the power amplifier.

19. The method of claim 18 wherein the second transistor is a bipolar pulldown transistor that includes a collector coupled to a gate of the transistor.

20. The method of claim 18 further comprising comparing a power control signal with an indication of output power of the power amplifier, the bias signal being based on said comparing during said biasing.

21. The method of claim 18 wherein the power amplifier includes a bipolar transistor having a collector that receives the system voltage and a base that receives the bias signal.

Continuity (3)
Continuation 14139445 · Dec 23, 2013
Continuation 12775675 · May 7, 2010
Related Publication 20160072452A1 · Mar 10, 2016
Cited By (2)
US 12,231,099 US 12,556,150