Wiring including graphene layer and method of manufacturing the same
Provided are a wiring including a graphene layer and a method of manufacturing the wiring. The method may include growing a graphene layer on a substrate and doping the graphene layer with a metal. The graphene layer may be grown using a plasma of a hydrocarbon at a temperature of about 200° C. to about 600° C. by plasma enhanced chemical vapor deposition (PECVD).
1. A method of manufacturing a wiring, the method comprising:
growing a graphene layer on a substrate using a plasma of a hydrocarbon at a temperature of about 200° C. to about 600° C. by plasma enhanced chemical vapor deposition (PECVD); and
doping the graphene layer with a metal.
2. The method of claim 1 , wherein
the growing the graphene layer comprises injecting the hydrocarbon and a precursor comprising the metal together into a chamber, and
the doping the graphene layer is performed as in-situ doping by the PECVD in the growing the graphene layer.
3. The method of claim 1 , wherein
the doping the graphene layer with the metal includes performing atomic layer deposition (ALD) at least once or chemical vapor deposition (CVD) at least once.
4. The method of claim 1 , further comprising:
depositing a metal thin film on the substrate prior to the growing the graphene layer, wherein
the graphene layer is doped with the metal as the metal thin film undergoes agglomeration during the growing the graphene layer.
5. The method of claim 1 , wherein
the substrate has a trench structure comprising a body and a protrusion, and
the graphene layer is grown inside the trench structure.
6. The method of claim 5 , wherein
in the growing the graphene layer, the graphene layer is grown spaced apart from the protrusion such that an air gap is between a side of the graphene layer and the protrusion.
7. The method of claim 1 , wherein the metal comprises one of ruthenium (Ru), aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), platinum (Pt), tantalum (Ta), rhodium (Rh), iridium (Ir), cobalt (Co), nickel (Ni), chromium (Cr), hafnium (Hf), titanium nitride (TiN), or an alloy thereof.
8. The method of claim 1 , wherein
the graphene layer comprises at least one layer,
the at least one layer is formed in a direction substantially parallel or substantially perpendicular to a surface direction of the substrate, or
the at least one layer is formed to have a structure comprising a portion substantially perpendicular to the surface direction of the substrate and a portion substantially parallel to the surface direction of the substrate.
9. The method of claim 1 , wherein
the doping the graphene layer includes at least one of doping a surface of the graphene layer with the metal, doping an inside of the graphene layer with the metal, and doping a grain boundary of the graphene layer with the metal.
10. The method of claim 1 , further comprising:
forming a barrier on the substrate before the forming the graphene layer, wherein
the growing the graphene layer on the substrate includes growing the graphene layer on the barrier.
11. A wiring comprising:
a substrate; and
a graphene layer doped with a metal on the substrate,
wherein a metal content of the graphene layer doped with the metal is about 1 at % to about 50 at %, and
a ratio of carbon having an sp 2 bond structure to total carbon in the graphene layer doped with the metal is about 50% to about 99%.
12. The wiring of claim 11 , wherein the substrate has a trench structure,
the substrate comprises a dielectric material having a dielectric constant κ of about 3.6 or less, and
the graphene layer doped with the metal is inside the trench structure.
13. The wiring of claim 11 , wherein a hydrogen (H) content of the graphene layer doped with the metal is in a range of about 1 at % to about 20 at %.
14. The wiring of claim 11 , wherein the metal includes one of ruthenium (Ru), aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), platinum (Pt), tantalum (Ta), rhodium (Rh), iridium (Ir), cobalt (Co), nickel (Ni), chromium (Cr), hafnium (Hf), titanium nitride (TiN), and an alloy thereof.
15. The wiring of claim 11 , wherein
the substrate includes a protrusion,
the graphene layer doped with the metal is spaced apart from the protrusion such that an air gap is between the protrusion and a side of the graphene layer doped with the metal.
16. The wiring of claim 11 , wherein
a width of the graphene layer doped with the metal is about 1 nm to about 20 nm,
a height the graphene layer doped with the metal is about 1 nm to about 20 nm, and
a resistivity of the graphene layer doped with the metal is about 800 μΩ·cm or less.
17. The wiring of claim 11 , wherein at least one layer included in the graphene layer doped with the metal is arranged in a direction substantially parallel to a surface direction of the substrate.
18. The wiring of claim 11 , wherein
at least one layer included in the graphene layer doped with the metal is arranged in a direction substantially perpendicular to a surface direction of the substrate, or
the least one layer included in the graphene layer doped with the metal has a structure comprising a portion substantially perpendicular to the surface direction of the substrate and a portion substantially parallel to the surface direction of the substrate.
19. The wiring of claim 11 , wherein at least one of a surface of the graphene layer, an inside of the graphene layer, and a grain boundary of the graphene layer is doped with the metal.
20. An electronic device comprising:
the wiring of claim 11 ; and
a transistor comprising a source electrode, a drain electrode, and a gate electrode, wherein
the wiring is electrically connected to at least one the source electrode, the drain electrode, and the gate electrode.