Semiconductor device
A purpose of the present invention is to countermeasure a connection failure of an electrode in an optical sensor using PIN type photo conductive film. A structure of the present invention is as follows. A semiconductor device including an optical sensor, the optical sensor including: a thin film transistor formed on a substrate, and a photo diode formed above the thin film transistor, in which the photo diode includes an anode, a photo conductive film and a cathode, the cathode is constituted from a titanium film, and a first transparent conductive film is formed between the titanium film and the photo conductive film.
1. A semiconductor device including an optical sensor,
the optical sensor comprising:
a thin film transistor formed on a substrate, and
a photo diode formed above the thin film transistor,
wherein the photo diode includes an anode, a photo conductive film and a cathode,
the cathode is constituted from a titanium film,
a first transparent conductive film is formed between the titanium film and the photo conductive film, and
an outer edge of the anode is within an outer edge of the photo diode.
2. The semiconductor device according to claim 1 ,
wherein the photoconductive film is made of an a-Si film having an n+ layer, an i layer (intrinsic layer), and a p+ layer from the cathode side.
3. The semiconductor device according to claim 2 ,
wherein the first transparent conductive film has an opening portion at a position overlapping with the photoconductive film, and the n+ layer and the cathode are in direct contact with each other at the opening portion.
4. The semiconductor device according to claim 1 ,
wherein the first transparent conductive film has a first portion which overlaps with the photo conductive film, and a second portion which does not overlap with the photo conductive film.
5. The semiconductor device according to claim 1 ,
wherein the anode is formed from a second transparent conductive film.
6. The semiconductor device according to claim 1 ,
wherein the first transparent conductive film is located outside the outer edge of the photo diode.
7. A semiconductor device including an optical sensor,
the optical sensor comprising:
a thin film transistor formed on a substrate, and
a photo diode formed above the thin film transistor,
wherein the photo diode includes an anode, a photo conductive film and a cathode,
the cathode is constituted from a titanium film,
the titanium film contacts a first transparent conductive film,
the titanium film is formed between the first transparent conductive film and the photo conductive film,
an outer edge of the anode is within an outer edge of the photo diode.
8. The semiconductor device according to claim 7 ,
wherein the photoconductive film is made of an a-Si film having an n+ layer, an i layer (intrinsic layer), and a p+ layer from the cathode side.
9. The semiconductor device according to claim 7 ,
wherein an organic passivation film is formed under the first transparent conductive film, and
the first transparent conductive film is sandwiched between the organic passivation film and the cathode, and overlaps with the photo conductive film.
10. The semiconductor device according to claim 9 ,
further including an oxide semiconductor and a source electrode connected to the oxide semiconductor,
wherein the source electrode is in direct contact with the first transparent conductive film via a contact hole formed in the organic passivation film.
11. The semiconductor device according to claim 7 ,
wherein the anode is formed from a second transparent conductive film.
12. The semiconductor device according to claim 7 ,
wherein a part of the anode is covered by an inorganic passivation film, and
the anode is connected to a connecting electrode which extends on the inorganic passivation film.
13. The semiconductor device according to claim 7 ,
wherein a side of the photo diode, a part of the anode, and a side of the contact hole is continuously covered with an isolation layer.
14. The semiconductor device according to claim 13 ,
wherein the isolation layer includes an opening overlapping the anode, and a connection electrode is connected to the anode at a part of the opening.
15. A semiconductor device including an optical sensor,
the optical sensor comprising:
a thin film transistor formed on a substrate, and
a photo diode formed above the thin film transistor,
wherein the photo diode includes an anode, a photo conductive film and a cathode,
a first organic passivation film is formed covering a part of the anode,
a connecting electrode, which extends on the first organic passivation film, connects to the anode, and
an outer edge of the anode is within an outer edge of the photo diode.
16. The semiconductor device according to claim 15 ,
wherein the photoconductive film is made of an a-Si film having an n+ layer, an i layer (intrinsic layer), and a p+ layer from the cathode side.
17. The semiconductor device according to claim 15 ,
wherein the cathode is formed from titanium, and
a second organic passivation is formed under the cathode.
18. The semiconductor device according to claim 15 ,
wherein an inorganic passivation film is formed on a part of the photo conductive film and a part of the anode, and under the first organic passivation.