Host load based dynamic storage system for configuration for increased performance
A data storage device including, in one implementation, a non-volatile memory device including a memory block that includes a plurality of memory dies and a controller that is coupled to the non-volatile memory device and that allocates power to non-memory components based on a determined usage of the memory dies. The controller is configured to monitor a utilization of the plurality of memory dies, determine a utilization state of the plurality of memory dies, and calculate an amount of available power allocated to the plurality of memory dies in response to determining that the plurality of memory dies are in a low utilization state. The controller is also configured to determine whether the amount of available power is above a predetermined threshold, and reallocate the available power to one or more components within the data storage device in response to determining that the amount of available power is above the predetermined threshold.
1. A memory controller, comprising:
memory; and
an electronic processor communicatively connected to the memory, the electronic processor configured to:
monitor a utilization of a plurality of memory dies of a non-volatile memory device,
determine whether the plurality of memory dies are in a high utilization state,
calculate an amount of available power allocated to the plurality of memory dies in response to determining that the plurality of memory dies are not in the high utilization state,
determine whether the amount of the available power is above a predetermined threshold, and
reallocate the available power to one or more components within the memory controller in response to determining that the amount of the available power is above the predetermined threshold.
2. The memory controller of claim 1 , wherein the electronic processor is further configured to continue with an existing power allocation profile in response to determining that the plurality of memory dies are in the high utilization state.
3. The memory controller of claim 1 , wherein the electronic processor is further configured to allocate maximum power to the plurality of memory dies in response to determining that the amount of the available power is not above the predetermined threshold.
4. The memory controller of claim 1 , wherein the electronic processor is configured to determine whether the plurality of memory dies are not in the high utilization state based on a predetermined percentage of the plurality of memory dies being idle.
5. The memory controller of claim 1 , wherein the electronic processor is configured to determine whether the plurality of memory dies are not in the high utilization state based on a number of active memory dies that is less than or equal to a number of queued commands received from a host device.
6. The memory controller of claim 1 , wherein, to reallocate the available power to the one or more components within the memory controller in response to determining that the amount of the available power is above the predetermined threshold, the electronic processor is further configured to reallocate power to the electronic processor to increase an operating frequency of the electronic processor.
7. The memory controller of claim 1 , wherein, to reallocate the available power to the one or more components within the memory controller in response to determining that the amount of the available power is above the predetermined threshold, the electronic processor is further configured to reallocate the available power to a toggle mode circuit to increase a data throughput of a data storage device.
8. The memory controller of claim 7 , wherein the electronic processor is further configured to:
reduce a sense time of the plurality of memory dies, and
reallocate the available power to a low-density parity check circuit.
9. A method comprising:
monitoring, with a memory controller, a utilization of a plurality of memory dies of a non-volatile memory device;
determining whether the plurality of memory dies are in a high utilization state;
calculating an amount of available power allocated to the plurality of memory dies in response to determining that the plurality of memory dies are not in the high utilization state;
determining whether the amount of the available power is above a predetermined threshold; and
reallocating the available power to one or more components within the memory controller in response to determining that the amount of the available power is above the predetermined threshold.
10. The method of claim 9 , wherein determining whether the plurality of memory dies are not in the high utilization state is based on a predetermined percentage of the plurality of memory dies are idle.
11. The method of claim 9 , wherein determining whether the plurality of memory dies are not in the high utilization state is based on a number of active memory dies that is less than or equal to a number of queued commands received from a host device.
12. The method of claim 9 , wherein reallocating the available power to the one or more components within the memory controller in response to determining that the amount of the available power is above the predetermined threshold further includes reallocating power to a processor of the memory controller to increase an operating frequency of the processor.
13. The method of claim 9 , wherein reallocating the available power to the one or more components within the memory controller in response to determining that the amount of the available power is above the predetermined threshold further includes reallocating the available power to a toggle mode circuit to increase a data throughput of a data storage device.
14. The method of claim 9 , further comprising:
configuring the plurality of memory dies to reduce a sense time of the plurality of memory dies; and
reallocating the available power to a low-density parity check circuit.
15. A non-transitory computer-readable medium comprising instructions that, when executed by an electronic processor, cause the electronic processor to perform a set of operations comprising:
monitoring a utilization of a plurality of memory dies of a non-volatile memory device;
determining whether the plurality of memory dies are in a high utilization state;
calculating an amount of available power allocated to the plurality of memory dies in response to determining that the plurality of memory dies are not in the high utilization state;
determining whether the amount of the available power is above a predetermined threshold; and
reallocating the available power to one or more components within a memory controller in response to determining that the amount of the available power is above the predetermined threshold.
16. The non-transitory computer-readable medium of claim 15 , wherein determining whether the plurality of memory dies are not in the high utilization state is based on a predetermined percentage of the plurality of memory dies are idle.
17. The non-transitory computer-readable medium of claim 15 , wherein determining whether the plurality of memory dies are not in the high utilization state is based on a number of active memory dies that is less than or equal to a number of queued commands received from a host device.
18. The non-transitory computer-readable medium of claim 15 , wherein reallocating the available power to the one or more components within the memory controller in response to determining that the amount of the available power is above the predetermined threshold further includes reallocating power to the electronic processor to increase an operating frequency of the electronic processor.
19. The non-transitory computer-readable medium of claim 15 , wherein reallocating the available power to the one or more components within the memory controller in response to determining that the amount of the available power is above the predetermined threshold further includes reallocating the available power to a toggle mode circuit to increase a data throughput of a data storage device.
20. The non-transitory computer-readable medium of claim 15 , further comprising:
configuring the plurality of memory dies to reduce a sense time of the plurality of memory dies; and
reallocating the available power to a low-density parity check circuit.