IP Library Granted Patent US 12,272,609
Granted Patent B2
US 12,272,609 · App. 17/833,027 · Granted Apr 8, 2025

Semiconductor device including through-package debug features

Inventors: Nir Amir (Beit Hashmonai, IL); Avichay Hodes (Kfar Ben Nun, IL)
Assignee: Sandisk Technologies, Inc.
H01L22/32G01R31/2886G01R31/2896G01R31/318597H01L23/3107H01L23/481H01L23/49816H01L25/0652H01L2225/06506H01L2225/0651H01L2225/06562
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,272,609
App. No.
17/833,027
Granted
Apr 8, 2025
Kind
B2
Abstract

A method of forming a semiconductor device includes through-package debug features enabling debug of a BGA package while mounted to a printed circuit board or other host device. In one example, the through-package debug features are filled or plated vias extending from a surface of the semiconductor device, through a device housing, down to test pads on the substrate. In another example, the through-package debug features are open channels formed from a surface of the semiconductor device.

Claims (25)

1. A method of debugging a semiconductor device mounted on a host device, the semiconductor device comprising a substrate, a semiconductor die and a housing, the method comprising:

(a) forming the substrate with a first surface and a second surface opposed to the first surface;

(b) forming the housing with a thickness, greater than a thickness of the semiconductor die, the thickness defined by a first surface and a second surface spaced from the first surface, the second surface lying against the first surface of the substrate;

(c) forming an electrically conductive debug feature having a first end at the first surface of the housing, and the debug feature having a second end terminating at a test pad formed in the first surface of the substrate, wherein the debug feature comprises an electrically conductive test pin, and the step of forming the electrically conductive test pin comprising the steps of:

(c1) drilling a hole in the housing, and

(c2) after said step (c1), forming an electrically conductive material on the wall of the drilled hole;

(d) forming a trace in the substrate between the semiconductor die and the test pad for electrically coupling the test pad to the semiconductor die;

(e) spacing the first end of the debug feature, at the first surface of the housing, from the substrate;

(f) physically contacting a surface probe to the first end of the electrically conductive debug feature on the housing to supply test data to circuitry within the semiconductor device via the probe and the test pad; and

(g) measuring output data resulting from the test data.

2. The method of claim 1 , wherein said step (c) of electrically coupling the probe with a test pad within the semiconductor device comprises positioning the probe in contact with the debug feature on the surface of the housing of the semiconductor device.

3. The method of claim 1 , said step (f) of electrically contacting a surface probe to the first end of the electrically conductive debug feature comprises positioning the probe in contact with the test pin on the surface of the housing of the semiconductor device.

4. The method of claim 1 , wherein said step (c2) of forming an electrically conductive material on the wall of the drilled hole comprises plating the hole with an electrical conductor.

5. The method of claim 4 , further comprising the step of forming the debug feature by filling the plated hole with an electrically conductive metal.

6. A method of assembling a semiconductor device for debugging with a controller die within the semiconductor device, comprising:

(a) forming a substrate within the semiconductor device, the substrate having a first surface and a second surface opposed to the first surface;

(b) mounting a plurality of semiconductor dies on the first surface of the substrate, the plurality of semiconductor dies comprising the controller die;

(c) forming a test pad within the semiconductor device;

(d) electrically coupling the test pad to the controller die;

(e) forming a housing with a thickness greater than a thickness of the plurality of semiconductor dies to encapsulate the test pad and the plurality of semiconductor dies, the housing having an internal surface lying against the first surface of the substrate and an external surface coextensive with an external surface of the semiconductor device; and

(f) forming an electrical conductor extending upward from the test pad and terminating at the external surface of the housing spaced from the substrate, the electrical conductor configured for use in debugging the semiconductor device.

7. The method of claim 6 , wherein said steps (c) and (d) of forming a test pad and electrically coupling the test pad to the controller die comprises the steps of forming the test pad on the substrate, and electrically coupling the test pad to the controller die by electrical traces in the substrate.

8. The method of claim 6 , wherein said steps (c) and (d) of forming a test pad and electrically coupling the test pad to the controller die comprises the step of forming the test pad on a surface of the controller die.

9. The method of claim 6 , the step (f) of forming the electrical conductor extending from the test pad comprising the step of drilling a hole through the housing down to the test pad within the housing on the substrate, and plating and/or filling the hole with an electrical conductor.

10. The method of claim 6 , the step (f) of forming the electrical conductor extending from the test pad comprising the steps of forming an electrically conductive column having a first end affixed to the test pad and extending upward from the test pad, and forming housing around the electrically conductive column, the electrically conductive column terminating at a surface of the housing.

Assignments (8)
PARTIAL RELEASE OF SECURITY INTERESTS Recorded Apr 25, 2025
From: JPMORGAN CHASE BANK, N.A., AS AGENT
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 071382/0001 →
SECURITY AGREEMENT Recorded Apr 25, 2025
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 071050/0001 →
PATENT COLLATERAL AGREEMENT Recorded Aug 23, 2024
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS THE AGENT
Reel/Frame 068762/0494 →
CHANGE OF NAME Recorded Jun 27, 2024
From: SANDISK TECHNOLOGIES, INC.
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 067982/0032 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2024
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 067567/0682 →
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 6, 2022
From: AMIR, NIR; HODES, AVICHAY
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 060284/0453 →
Continuity (2)
Division 16021687 · Jun 28, 2018
Related Publication 20220301952A1 · Sep 22, 2022
References Cited (32)
US 5334857A · Mennitt · 1994 [cited by examiner]
US 6010915A · Hammel · 2000 [cited by applicant]
US 6028354A · Hoffman · 2000 [cited by examiner]
US 6649832B1 · Brophy · 2003 [cited by examiner]
US 6740984B2 · Tay et al. · 2004 [cited by applicant]
US 7418603B2 · Nakayama et al. · 2008 [cited by applicant]
US 20030011064A1 · Combs · 2003 [cited by examiner]
US 20050073038A1 · Kuo · 2005 [cited by examiner]
US 20070222005A1 · Schmitt · 2007 [cited by applicant]
US 20080042252A1 · Moden · 2008 [cited by examiner]
US 20080250377A1 · Bird et al. · 2008 [cited by applicant]
US 20110204911A1 · Kimoto · 2011 [cited by examiner]
US 20110298097A1 · Sueyoshi · 2011 [cited by examiner]
US 20130221452A1 · Strothmann et al. · 2013 [cited by applicant]
US 20140063742A1 · Carpenter, Jr. · 2014 [cited by examiner]
US 20150015288A1 · Ma · 2015 [cited by examiner]
US 20160163609A1 · Rahman et al. · 2016 [cited by applicant]
US 20160372405A1 · Broderick · 2016 [cited by examiner]
US 20170285097A1 · Pon et al. · 2017 [cited by applicant]
Restriction Requirement dated Jan. 27, 2020 in U.S. Appl. No. 16/021,687. [cited by applicant]
Response to Restriction Requirement dated Mar. 26, 2020 in U.S. Appl. No. 16/021,687. [cited by applicant]
Office Action dated Apr. 16, 2020 in U.S. Appl. No. 16/021,687. [cited by applicant]
Response to Office Action dated Jun. 18, 2020 in U.S. Appl. No. 16/021,687. [cited by applicant]
Final Office Action dated Jul. 27, 2020 in U.S. Appl. No. 16/021,687. [cited by applicant]
Response to Final Office Action dated Oct. 19, 2020 in U.S. Appl. No. 16/021,687. [cited by applicant]
Office Action dated Mar. 3, 2021 in U.S. Appl. No. 16/021,687. [cited by applicant]
Response to Office Action dated Jun. 2, 2021 in U.S. Appl. No. 16/021,687. [cited by applicant]
Final Office Action dated Sep. 22, 2021 in U.S. Appl. No. 16/021,687. [cited by applicant]
Response to Final Office Action dated Dec. 6, 2021 in U.S. Appl. No. 16/021,687. [cited by applicant]
Office Action dated Jan. 21, 2022 in U.S. Appl. No. 16/021,687. [cited by applicant]
Response to Office Action dated Apr. 6, 2022 in U.S. Appl. No. 16/021,687. [cited by applicant]
Notice of Allowance and Fee(s) Due dated Apr. 29, 2022 in U.S. Appl. No. 16/021,687. [cited by applicant]