Source/drain EPI structure for device boost
View Patent ↗A method includes providing a substrate, a semiconductor fin extending from the substrate, and a gate structure over the substrate and engaging the semiconductor fin; etching the semiconductor fin to form a trench; and epitaxially growing a semiconductor structure in the trench, which includes epitaxially growing a first semiconductor layer having silicon germanium (SiGe); epitaxially growing a second semiconductor layer having SiGe above the first semiconductor layer; epitaxially growing a third semiconductor layer having SiGe over the second semiconductor layer; and epitaxially growing a fourth semiconductor layer having SiGe and disposed at a corner portion of the semiconductor structure. Each of the first, second, third, and fourth semiconductor layers includes a p-type dopant, and the fourth semiconductor layer has a higher dopant concentration of the p-type dopant than each of the first, second, and third semiconductor layers.
1 . A method, comprising:
providing a structure that includes a substrate, a semiconductor fin extending from the substrate, and a gate structure over the substrate and engaging the semiconductor fin;
etching the semiconductor fin adjacent the gate structure to form a trench; and
epitaxially growing a semiconductor structure in the trench, wherein the epitaxially growing of the semiconductor structure includes:
epitaxially growing a first semiconductor layer having silicon germanium;
epitaxially growing a second semiconductor layer having silicon germanium above the first semiconductor layer;
epitaxially growing a third semiconductor layer having silicon germanium over the second semiconductor layer; and
epitaxially growing a fourth semiconductor layer having silicon germanium and disposed at a corner portion of the semiconductor structure, wherein each of the first, the second, the third, and the fourth semiconductor layers includes a p-type dopant, and the fourth semiconductor layer has a higher dopant concentration of the p-type dopant than each of the first, the second, and the third semiconductor layers.
2 . The method of claim 1 , wherein the epitaxially growing of the second semiconductor layer includes:
increasing a first ratio of a first flow rate of a first gas containing germanium to a second flow rate of a second gas containing silicon; and
decreasing a second ratio of the first flow rate to a third flow rate of a third gas containing the p-type dopant.
3 . The method of claim 2 , wherein the first ratio is gradually increased from about 5 to about 25 and the second ratio is gradually decreased from about 10 to about 2.
4 . The method of claim 1 , wherein the epitaxially growing of the second semiconductor layer includes:
gradually increasing a flow rate of a gas containing Ge;
gradually decreasing a flow rate of a gas containing Si;
gradually increasing a flow rate of a gas containing the p-type dopant; and
gradually increasing a flow rate of an etching gas.
5 . The method of claim 1 , wherein the epitaxially growing of the third semiconductor layer includes keeping a flow rate of a first gas containing germanium substantially constant while gradually increasing a flow rate of a second gas containing the p-type dopant.
6 . The method of claim 1 , wherein the epitaxially growing of the fourth semiconductor layer includes gradually decreasing a flow rate of a first gas containing germanium and gradually increasing a flow rate of a second gas containing the p-type dopant.
7 . The method of claim 1 , wherein the epitaxially growing of the semiconductor structure further includes epitaxially growing a fifth semiconductor layer having silicon germanium over the third and the fourth semiconductor layers, wherein the fifth semiconductor layer includes the p-type dopant at a higher dopant concentration than the first, the second, and the third semiconductor layers.
8 . The method of claim 7 , further comprising:
depositing an inter-level dielectric (ILD) layer over the fifth semiconductor layer;
forming a contact hole in the ILD layer, the contact hole exposing an area of the semiconductor structure; and
forming a silicide layer on the semiconductor structure.
9 . The method of claim 8 , after forming the contact hole and before forming the silicide layer, further comprising:
implanting the p-type dopant to a top portion of the semiconductor structure.
10 . The method of claim 9 , after implanting the p-type dopant to the top portion of the semiconductor structure and before forming the silicide layer, further comprising:
implanting germanium to the top portion of the semiconductor structure.
11 . A method, comprising:
providing a structure that includes a substrate, a semiconductor fin extending from the substrate, and a gate structure over the substrate and engaging the semiconductor fin;
etching the semiconductor fin adjacent the gate structure to form a trench; and
epitaxially growing a semiconductor structure in the trench, wherein the epitaxially growing of the semiconductor structure includes:
epitaxially growing a first semiconductor layer in the trench;
epitaxially growing a second semiconductor layer above the first semiconductor layer;
epitaxially growing a third semiconductor layer over the second semiconductor layer; and
epitaxially growing a fourth semiconductor layer and disposed at a corner portion of the semiconductor structure, wherein each of the first, the second, the third, and the fourth semiconductor layers includes silicon germanium doped with a p-type dopant comprising boron, and the fourth semiconductor layer has a higher boron dopant concentration than each of the first, the second, and the third semiconductor layers, wherein a boron doping concentration in the third semiconductor layer gradually increases as a thickness of the third semiconductor layer increases.
12 . The method of claim 11 , wherein the epitaxially growing of the semiconductor structure further includes epitaxially growing a fifth semiconductor layer having silicon germanium over the third and the fourth semiconductor layers, wherein the fifth semiconductor layer includes boron at a higher dopant concentration than the first, the second, and the third semiconductor layers.
13 . The method of claim 11 , wherein the epitaxially growing of the third semiconductor layer includes keeping a flow rate of a first gas containing germanium substantially constant while gradually increasing a flow rate of a second gas containing boron.
14 . The method of claim 13 , wherein the epitaxially growing of the fourth semiconductor layer includes gradually decreasing a flow rate of the first gas and gradually increasing a flow rate of the second gas.
15 . The method of claim 11 , wherein the epitaxially growing of the second semiconductor layer includes:
epitaxially growing a first sub-layer over the first semiconductor layer; and
epitaxially growing a second sub-layer over the first sub-layer, wherein the epitaxially growing of the first sub-layer and the epitaxially growing of the second sub-layer are performed at different process conditions.
16 . The method of claim 15 , wherein a boron dopant concentration in the first sub-layer gradually increases and a boron dopant concentration in the second sub-layer gradually decreases.
17 . A method, comprising:
providing a structure that includes a substrate, a semiconductor fin extending from the substrate, and a gate structure over the substrate and engaging the semiconductor fin;
etching the semiconductor fin adjacent the gate structure to form a trench; and
epitaxially growing a semiconductor structure in the trench, wherein the epitaxially growing of the semiconductor structure includes:
epitaxially growing a first semiconductor layer having silicon germanium in the trench;
epitaxially growing a second semiconductor layer having silicon germanium above the first semiconductor layer;
epitaxially growing a third semiconductor layer having silicon germanium over the second semiconductor layer;
epitaxially growing a fourth semiconductor layer having silicon germanium and disposed at a corner portion of the semiconductor structure, wherein the semiconductor structure has a largest lateral dimension at the corner portion than at other portions of the semiconductor structure, wherein each of the first, the second, the third, and the fourth semiconductor layers includes a p-type dopant and the fourth semiconductor layer has a highest p-type dopant concentration compared to the other semiconductor layers, and a dopant concentration of the p-type dopant in the second semiconductor layer gradually increases and then gradually decreases as a thickness of the second semiconductor layer increases; and
epitaxially growing a fifth semiconductor layer over the fourth semiconductor layer.
18 . The method of claim 17 , wherein a germanium concentration in the second semiconductor layer gradually increases as the thickness of the second semiconductor layer increases.
19 . The method of claim 17 , wherein the epitaxially growing of the second semiconductor layer includes gradually increasing a ratio of a first flow rate of a first gas containing germanium to a second flow rate of a second gas containing silicon from about 5 to about 25.
20 . The method of claim 19 , wherein the epitaxially growing of the second semiconductor layer further includes decreasing another ratio of the first flow rate to a third flow rate of a third gas containing the p-type dopant from about 10 to about 2.