Throttle valve and foreline cleaning using a microwave source
Exemplary semiconductor processing systems may include a processing chamber defining a processing region. The systems may include a foreline coupled with the processing chamber, the foreline defining a fluid conduit. The systems may include a radical generator having an inlet and an outlet. The outlet may be fluidly coupled with the foreline. The systems may include a gas source fluidly coupled with the inlet of the radical generator. The systems may include a throttle valve coupled with the foreline downstream of the radical generator.
1 . A semiconductor processing system, comprising:
a processing region;
a first foreline and a second foreline coupled with the processing system, each foreline defining a fluid conduit;
a first radical generator and a second radical generator, each having an inlet and an outlet, the outlet of each radical generator being fluidly coupled with a respective one of the first foreline and second foreline downstream of the processing region, wherein:
each radical generator is fluidly coupled with a first gas source comprising a cleaning gas and a second gas source comprising a carrier gas;
each radical generator is configured to generate a plasma of the cleaning gas and to subsequently flow the carrier gas to the foreline; and
the carrier gas forces radicals of the plasma into a respective foreline; and
a first throttle valve and a second throttle valve, an inlet of each throttle valve coupled with an outlet of the respective one of the first foreline and second foreline downstream of the respective one of the first radical generator and the second radical generator and the processing region.
2 . The semiconductor processing system of claim 1 , wherein:
at least one of the first radical generator and the second radical generator comprises a microwave radical generator.
3 . The semiconductor processing system of claim 1 , wherein:
at least one of the first radical generator and the second radical generator is positioned proximate the throttle valve.
4 . The semiconductor processing system of claim 1 , wherein:
during operation of at least one of the first radical generator and the second radical generator, a pressure in the processing region is greater than a pressure in at least one of the first foreline and the second foreline.
5 . The semiconductor processing system of claim 1 , wherein:
at least one of the first foreline and the second foreline comprises a J-pipe defining a first inlet, an outlet, and a second inlet disposed at a bend of the J-pipe; and
a respective one of the first radical generator and the second radical generator is coupled with the second inlet.
6 . The semiconductor processing system of claim 1 , wherein:
the carrier gas comprises at least one of argon, NF3, or O2.
7 . The semiconductor processing system of claim 1 , wherein:
the cleaning gas comprises argon.
8 . The semiconductor processing system of claim 1 , further comprising:
a gas panel comprising the first gas source and the second gas source.
9 . The semiconductor processing system of claim 8 , wherein:
the gas panel comprises a remote plasma source.
10 . The semiconductor processing system of claim 1 , further comprising:
a cooling line coupled with at least one of the first radical generator and the second radical generator.
11 . The semiconductor processing system of claim 10 , wherein:
the cooling line is fluidly coupled with a source comprising a cooling fluid.
12 . The semiconductor processing system of claim 11 , wherein:
the cooling fluid comprises one or both of water and ethylene glycol.
13 . A semiconductor processing system, comprising:
a processing region;
a first foreline and a second foreline coupled with the processing system, each foreline defining a fluid conduit;
a first radical generator and a second radical generator that is fluidly coupled with a respective one of the first foreline and second foreline downstream of the processing region, wherein:
each radical generator is fluidly coupled with a first gas source comprising a cleaning gas and a second gas source comprising a carrier gas;
each radical generator is configured to generate a plasma of the cleaning gas and to subsequently flow the carrier gas to the foreline; and
the carrier gas forces radicals of the plasma into a respective foreline; and
a first throttle valve and a second throttle valve, an inlet of each throttle valve coupled with an outlet of the respective one of the first foreline and second foreline downstream of the respective one of the first radical generator and the second radical generator and the processing region.
14 . The semiconductor processing system of claim 13 , wherein:
during operation of at least one of the first radical generator and the second radical generator, a pressure in the processing region is greater than a pressure in at least one of the first foreline and the second foreline.
15 . The semiconductor processing system of claim 9 , wherein:
at least one of the first radical generator and the second radical generator comprises an RF radical generator or a microwave radical generator.
16 . The semiconductor processing system of claim 13 , wherein:
at least one of the first foreline and the second foreline comprises a J-pipe defining a first inlet, an outlet, and a second inlet disposed at a bend of the J-pipe; and
respective one of the first radical generator and the second radical generator is coupled with the second inlet.
17 . The semiconductor processing system of claim 13 , further comprising:
the first gas source and the second gas source are coupled with an inlet of a respective one of the first radical generator and the second radical generator.
18 . The semiconductor processing system of claim 17 further comprising:
a gas panel comprising the first gas source and the second gas source.
19 . The semiconductor processing system of claim 13 , further comprising:
at least one cooling line coupled with a cooling fluid source, wherein:
at least one of the first radical generator and the second radical generator comprises a fluid inlet and a fluid outlet; and
the at least one cooling line is fluidly coupled with the fluid inlet and the fluid outlet.
20 . The semiconductor processing system of claim 19 , wherein:
the fluid inlet is proximate control circuitry of the radical generator.