Protective elements for bonded structures
A bonded structure is disclosed. The bonded structure can include a semiconductor element comprising active circuitry. The bonded structure can include a protective element directly bonded to the semiconductor element without an adhesive along a bonding interface. The protective element can include an obstructive material disposed over at least a portion of the active circuitry. The obstructive material can be configured to obstruct external access to the active circuitry. The bonded structure can include a disruption structure configured to disrupt functionality of the at least a portion of the active circuitry upon debonding of the protective element from the semiconductor element.
1. A bonded structure comprising:
a semiconductor element comprising active circuitry;
an obstructive element directly bonded to the semiconductor element without an adhesive, the obstructive element including an obstructive material disposed over at least a portion of the active circuitry, the obstructive material configured to obstruct external access to the active circuitry; and
a conductor connected to a monitoring circuit usable to determine whether the direct bond between the semiconductor element and the obstructive element has been tampered with.
2. The bonded structure of claim 1 , wherein the semiconductor element comprises a first bonding layer and wherein the obstructive element comprises a second bonding layer directly bonded to the first bonding layer without an adhesive.
3. The bonded structure of claim 2 , wherein the first and second bonding layers comprise silicon oxide.
4. The bonded structure of claim 2 , further comprising one or more intermediate layers between the first bonding layer and the active circuitry, the one or more intermediate layers comprising circuitry, the etch pathway extending through at least a portion of the one or more intermediate layers.
5. The bonded structure of claim 4 , wherein the one or more intermediate layers includes a blocking layer, one or more openings formed in the blocking layer, the etch pathway extending through the one or more openings.
6. The bonded structure of claim 4 , wherein the conductor is at least partially disposed in the one or more intermediate layers.
7. The bonded structure of claim 1 , wherein the monitoring circuit is configured to monitor an electrical current through the conductor.
8. The bonded structure of claim 7 , wherein the monitoring circuit is configured to indicate that the direct bond has been tampered with if an electrical signal through the conductor is interrupted.
9. The bonded structure of claim 2 , further comprising a first plurality of contact pads in the first bonding layer and a second plurality of contact pads in the second bonding layer, the first plurality of contact pads directly bonded to the second plurality of contact pads without an adhesive.
10. The bonded structure of claim 9 , further comprising a first blocking layer in the first bonding layer and an anchor material layer in the second bonding layer, the first blocking layer having one or more openings therethrough.
11. The bonded structure of claim 10 , wherein the second plurality of contact pads are at least partially embedded in the second blocking layer.
12. The bonded structure of claim 9 , wherein at least one contact pad is connected to a monitoring circuit to monitor connectivity of the directly bonded first and second pluralities of contact pads.
13. The bonded structure of claim 1 , wherein a first hardness of the obstructive material is greater than a second hardness of the semiconductor element.
14. The bonded structure of claim 1 , wherein the obstructive material comprises an abrasive material.
15. The bonded structure of claim 1 , wherein the obstructive material comprises a light-blocking material.
16. The bonded structure of claim 15 , wherein the light-blocking material is configured to block light at near infrared (NIR) wavelengths.