Dicing and wafer thinning to form semiconductor dies
A semiconductor die is separated from a semiconductor wafer using a method that involves performing a partial cut on the semiconductor wafer, applying tape lamination to a front side of the semiconductor wafer, grinding a back side of the semiconductor wafer, mounting the semiconductor wafer to a die attach film (DAF) layer, removing the tape lamination from the front side of the semiconductor wafer, and performing a DAF-die separation operation to separate the semiconductor die from the adjacent semiconductor die. A DAF laser is not used during the method of separating a semiconductor die from a semiconductor wafer. The front side is the side of the semiconductor wafer where integrated circuits are exposed. The partial cut is between the semiconductor die and an adjacent semiconductor die. The back side is opposite of the front side and the back side is a silicon layer of the semiconductor die.
1 . A method of separating a semiconductor die from a semiconductor wafer having a plurality of semiconductor dies, the method comprising:
performing a partial cut on a front side of the semiconductor wafer to a first level relative to the front side of the semiconductor wafer to form a cavity;
applying tape lamination over a metal layer exposed on the front side of the semiconductor wafer;
grinding a portion of a silicon layer on a back side of the semiconductor wafer, wherein:
the portion is grinded to a second level relative to the front side of the semiconductor wafer;
a remaining portion of the silicon layer after the grinding has a thickness equal to a difference between the first level and the second level;
the difference between the first level and the second level is about 10 μm; and
the back side is opposite the front side;
mounting the back side of the semiconductor wafer to a die attach film (DAF) layer;
removing the tape lamination from the front side of the semiconductor wafer; and
performing a DAF-die separation (DDS) process to separate the semiconductor die from an adjacent semiconductor die of the semiconductor wafer, wherein remnants of the DAF layer remain on a side edge of the semiconductor die, wherein the side edge of the semiconductor die has a width that is greater than a remaining portion of the semiconductor die, and wherein a width of the remnants of the DAF layer is equal to the width of the side edge of the semiconductor die.
2 . The method of claim 1 , wherein a DAF laser is not applied to the semiconductor wafer during the method of separating the semiconductor die from the semiconductor wafer.
3 . The method of claim 1 , wherein the first level is substantially less than the second level when the cavity has a rectangular cross-section with rounded edges.
4 . The method of claim 1 , wherein the DDS process occurs at a midpoint of the cavity at the first level.
5 . The method of claim 1 , wherein remnants of the DAF layer remain on a side edge between the front side and the back side of the semiconductor die.
6 . The method of claim 1 , wherein a width of the remaining portion of the silicon layer that contacts the DAF layer is equal to a greatest width of the DAF layer.
7 . The method of claim 1 , wherein performing the DDS process is in response to removing the tape lamination.