Dielectric having high-dielectric constant, method of manufacturing the same, target material for manufacturing the dielectric, electronic device including the dielectric, and electronic apparatus including the electronic device
Disclosed are a high-dielectric and method of manufacturing the same, a target material used for manufacturing the high-dielectric, an electronic device including the high-dielectric, and an electronic apparatus including the electronic device. The high-dielectric includes a first material including oxygen and at least two components, and a second material different from the first materials. The first material is a dielectric having a dielectric constant greater than a dielectric constant of silicon oxide, and the second material is an element for reducing a crystallization temperature of the first material. The content of the second material with respect to the first material may be within a range that does not deteriorate leakage current characteristics of the first material. The content of the second material may be in a range of about 0.1 atomic % to about 10 atomic %, about 0.1 atomic % to about 8.5 atomic %, or about 0.1 atomic % to about 2 atomic %.
1 . A high-dielectric comprising:
a first material having a dielectric constant greater than a dielectric constant of silicon oxide and including oxygen and at least two components; and
a second material different from the first material,
wherein the second material reduces a crystallization temperature of the first material, and
the second material includes indium (In).
2 . The high-dielectric of claim 1 , wherein a content of the second material with respect to the first material is within a range that does not deteriorate a leakage current characteristic of the first material.
3 . The high-dielectric of claim 2 , wherein the content of the second material is in a range of 0.1 atomic % to 10 atomic %.
4 . The high-dielectric of claim 1 , wherein the first material includes at least one of a ternary or quaternary perovskite material.
5 . The high-dielectric of claim 1 , wherein the second material is uniformly distributed in the first material.
6 . The high-dielectric of claim 1 , wherein
the first material includes a plurality of sequentially stacked layers, and
the second material is included in a second material layer between at least two of the plurality of sequentially stacked layers.
7 . The high-dielectric of claim 6 , wherein the second material layer is completely embedded in the first material.
8 . The high-dielectric of claim 1 , wherein
the first material includes at least a first region and a second region, and
the second material is included in only the first region of the first material.
9 . The high-dielectric of claim 6 , wherein the second material layer is included in a plurality of second material layers separated from each other in the first material.
10 . An electronic device comprising:
a first stack;
a second stack; and
a high-dielectric layer between the first stack and the second stack,
wherein the high-dielectric layer includes the high-dielectric of claim 1 .
11 . The electronic device of claim 10 , wherein the first stack includes a first portion of a configuration constituting a solar cell including the high-dielectric layer.
12 . The electronic device of claim 11 , wherein the second stack includes a second portion constituting the solar cell.
13 . The electronic device of claim 10 , wherein
the first stack includes a first electrode layer,
the second stack includes a second electrode layer, and
the first electrode layer, the second electrode layer, and the high-dielectric layer constitute a capacitor.
14 . A memory device comprising:
a transistor; and
a data storage element coupled to the transistor,
wherein the data storage element includes the electronic device of claim 10 .
15 . An electronic apparatus comprising the memory device of claim 14 .
16 . A sputtering target for forming a high-dielectric layer comprising:
a first source material including at least two different components other than oxygen such that a first material including an oxide of the at least two different components has a dielectric constant greater than a dielectric constant of silicon oxide; and
a second source material coupled to the first source material,
wherein the second source material includes a component that reduces a crystallization temperature of the first material, and
wherein the second source material includes indium (In).
17 . The sputtering target of claim 16 , wherein the first source material includes a perovskite-based dielectric component.
18 . The sputtering target of claim 17 , wherein the first source material includes a first to third components different from each other.
19 . The sputtering target of claim 16 , wherein a content of the second source material is within a range such that, after a sputtering operation, a content of the component that reduces the crystallization temperature of the first material, in the first material, is within a range that does not deteriorate a leakage current characteristic of the first material.
20 . The sputtering target of claim 19 , wherein the range of the content of the second source material is such that the range of the content of the component that reduces the crystallization temperature of the first material, in the first material, is in a range of 0.1 atomic % to 10 atomic %.