IP Library › Granted Patent US 11,882,724
Granted Patent B2
US 11,882,724 · App. 17/851,607 · Granted Jan 23, 2024

Light-emitting device and electronic apparatus

Inventors: Ryoichi Nozawa (Tatsuno-machi, JP); Atsushi Amano (Shiojiri, JP); Takeshi Koshihara (Matsumoto, JP); Akio Fukase (Chino, JP); Shinichi Iwata (Chino, JP)
Assignee: SEIKO EPSON CORPORATION
H10K50/852H10K50/81H10K50/844H10K50/856H10K59/122H10K59/35H10K2102/00
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Quick Facts
Patent No.
US 11,882,724
App. No.
17/851,607
Granted
Jan 23, 2024
Kind
B2
Abstract

A first light-emitting element and a second light-emitting element that have a resonance structure that causes output light from a light-emission functional layer to resonate between a reflective layer and a semi-transmissive reflective layer, and a pixel definition layer, and in which an aperture part is formed to correspond to each of the first light-emitting element and the second light-emitting element, are formed on a base. A first interval between the reflective layer and the semi-transmissive reflective layer in the first light-emitting element and a second interval between the reflective layer and the semi-transmissive reflective layer in the second light-emitting element are different, and a film thickness of the pixel definition layer is less than a difference between the first interval and the second interval.

Claims (19)

1. A light-emitting device comprising:

a semi-transmissive reflective layer;

a reflective layer;

a light-emission functional layer disposed between the reflective layer and the semi-transmissive reflective layer;

a first pixel electrode disposed between the reflective layer and the light-emission functional layer;

a second pixel electrode disposed between the reflective layer and the light-emission functional layer;

an insulating layer that is disposed between the reflective layer and each of the first pixel electrode and the second pixel electrode; and

a first sealing layer that is disposed on the semi-transmissive reflective layer and that is in contact with the semi-transmissive reflective layer, wherein:

the insulating layer is in contact with both the reflective layer and the first pixel electrode in a first region where the insulating layer is sandwiched by the reflective layer and the first pixel electrode,

the insulating layer is in contact with both the reflective layer and the second electrode in a second region where the insulating layer is sandwiched by the reflective layer and the second pixel electrode,

in plan view, the insulating layer overlaps with the first pixel electrode and the second pixel electrode and is continuous in a third region between the first region and the second region, and

a thickness of the insulating layer in the second region is thicker than a thickness of the insulating layer in the first region.

2. The light-emitting device according to claim 1 , wherein

the insulating layer including a plurality of layers that each include an optically transparent insulating material.

3. The light-emitting device according to claim 1 , wherein

the insulating layer is in contact with both the reflective layer and the light-emission functional layer in the third region.

4. The light-emitting device according to claim 1 , wherein

a thickness of the insulating layer in the third region is thicker than both of a thickness of the insulating layer in the first region and a thickness of the insulating layer in the second region.

5. An electronic apparatus comprising the light-emitting device according to claim 1 .

Priority Claims (1)
JP 2013-137784 · Jul 1, 2013 · national
Continuity (6)
Continuation 17173530 · Feb 11, 2021
Continuation 16790081 · Feb 13, 2020
Continuation 16031421 · Jul 10, 2018
Continuation 15485613 · Apr 12, 2017
Continuation 14314640 · Jun 25, 2014
Related Publication 20220328793A1 · Oct 13, 2022
Cited By (1)
US 12,532,604