Granted Patent B2

US 12,288,817 · App. 17/871,231 · Granted Apr 29, 2025

Inventor: Masato Noborio (Nisshin, JP)

Assignees: DENSO CORPORATION; TOYOTA JIDOSHA KABUSHIKI KAISHA; MIRISE Technologies Corporation

H01L29/7811H01L21/046H01L29/0623H01L29/1095H01L29/1608H01L29/66068H01L29/7813

Abstract

Claims (65)

1. A semiconductor device comprising:

a cell region provided with a semiconductor element;

an outer peripheral region surrounding an outer periphery of the cell region;

a substrate of a first or second conductivity-type, the substrate providing the cell region and the outer peripheral region;

a drift layer of the first conductivity-type, the drift layer disposed on the substrate and having an impurity concentration lower than that of the substrate, the drift layer providing the cell region and the outer peripheral region;

a first electrode disposed opposite to the substrate with respect to the drift layer, and electrically connected to the semiconductor element provided in the cell region; and

a second electrode disposed opposite to the drift layer with respect to the substrate, and electrically connected to the semiconductor element provided in the cell region, wherein:

the outer peripheral region includes a guard ring part having a plurality of guard rings of the second conductivity-type, and a plurality of guard ring column regions of the second conductivity-type;

each of the plurality of guard rings is disposed in a surface layer portion of the drift layer and has a frame shape surrounding the cell region;

the plurality of guard ring column regions are extended from the guard rings toward the substrate;

each of the plurality of guard ring column regions has a width smaller than a width of each of the plurality of guard rings in a direction along a planar direction of the substrate in a predetermined cross-section defined along the cell region and the outer peripheral region; and

at least two guard ring column regions are provided for each of the plurality of guard rings.

2. The semiconductor device according to claim 1 , wherein

the cell region includes:

a base region of the second conductivity-type disposed above the drift layer;

a cell deep layer disposed in the drift layer, connected to the base region, and extending toward the substrate; and

a cell column region of the second conductivity-type extending from the cell deep layer toward the substrate.

3. The semiconductor device according to claim 1 , wherein

the guard ring part has a charge density of the first conductivity-type increasing as a function of distance from the cell region toward an outer side opposite to the cell region.

4. The semiconductor device according to claim 3 ,

wherein the plurality of guard ring column regions are provided to satisfy a relationship of:

NAΣP mk −NDΣN mn >NAΣP (m+1)k −NDΣN (m+1)n ,

wherein

NA represents an acceptor concentration,

ND represents a donor concentration,

P mk represents a volume of a k-th guard ring column region from a cell region side, of the guard ring column regions connected to an m-th guard ring from the cell region side, and

N mn represents a volume of an n-th drift layer from the cell region side, of the drift layer located around the guard ring column region connected to the m-th guard ring from the cell region side.

5. The semiconductor device according to claim 1 , wherein

each of the guard ring column regions includes:

a plurality of first column regions disposed away from the plurality of guard rings; and

a plurality of second column regions connecting between the plurality of first column regions and the plurality of guard rings,

at least two second column regions are provided for each guard ring, and

at least two first column regions are provided for each second column region, and

each first column region has a width smaller than that of the second column region.

6. The semiconductor device according to claim 5 , wherein

the drift layer includes:

a first high-concentration layer in which the first column regions are disposed; and

a second high-concentration layer in which the second column regions and the guard ring are disposed, and

the first high-concentration layer has an impurity concentration higher than that of the second high-concentration layer.

7. A method for manufacturing a semiconductor device,

the semiconductor device including:

a cell region provided with a semiconductor element;

an outer peripheral region surrounding an outer periphery of the cell region;

a substrate of a first or second conductivity-type, the substrate providing the cell region and the outer peripheral region;

a drift layer of the first conductivity-type, the drift layer disposed on the substrate and having an impurity concentration lower than that of the substrate, the drift layer providing the cell region and the outer peripheral region;

a first electrode disposed opposite to the substrate with respect to the drift layer, and electrically connected to the semiconductor element provided in the cell region; and

a second electrode disposed opposite to the drift layer with respect to the substrate, and electrically connected to the semiconductor element provided in the cell region, wherein:

the outer peripheral region includes a guard ring part having a plurality of guard rings of the second conductivity-type, and a plurality of guard ring column regions of the second conductivity-type;

each of the plurality of guard rings is disposed in a surface layer portion of the drift layer and has a frame shape surrounding the cell region;

the plurality of guard ring column regions are extended from the guard rings toward the substrate;

each of the plurality of guard ring column regions has a width smaller than a width of each of the plurality of guard rings in a direction along a planar direction of the substrate in a predetermined cross-section defined along the cell region and the outer peripheral region; and

at least two guard ring column regions are provided for each of the plurality of guard rings,

the method comprising:

preparing the substrate;

arranging a first drift layer constituent portion for constituting the drift layer on the substrate;

forming the plurality of guard ring column regions in the drift layer constituent portion;

arranging a second drift layer constituent portion on the first drift layer constituent portion, after the forming of the plurality of guard ring column regions;

forming the plurality of guard rings in the second drift layer constituent portion to be connected to the guard ring column regions, and

arranging a third drift layer constituent portion on the second drift layer constituent portion, to thereby form the drift layer with the first and second drift layer constituent portions.

8. The method according to claim 7 , wherein

the forming of the plurality of guard ring column regions includes ion-implanting in the first drift layer constituent portion to form the plurality of guard ring column regions.

9. The method according to claim 7 , wherein

the forming of the plurality of guard ring column regions includes:

forming a plurality of column trenches in the first drift layer constituent portion; and

embedding a second conductive layer in the plurality of column trenches, thereby to form the guard ring column regions.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (10)