Memory system and operating method of the memory system
A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.
1. A memory package comprising:
an interface circuit configured to receive a command signal and a read enable signal from a controller, retime the command signal and the read enable signal, and output the command signal and the read enable signal; and
a semiconductor memory configured to transfer a read command to retrieve first data in response to the command signal and the read enable signal received through the interface circuit and output the read first data to the interface circuit together with a data strobe signal,
wherein the interface circuit stores the first data temporarily during a read operation of second data, and the interface circuit receives the second data in synchronization with the data strobe signal from the semiconductor memory.
2. The memory package according to claim 1 , wherein the interface circuit blocks, during the read operation of the second data, the first data received from the semiconductor memory.
3. The memory package according to claim 1 , wherein the read enable signal includes the data strobe signal.
4. The memory package according to claim 1 ,
wherein the interface circuit performs the read operation of the second data when the command signal received from the controller corresponds to the read operation of the second data, and
wherein the interface circuit determines that the command signal corresponds to the read operation of the second data when an address included in the command signal corresponds to the interface circuit.
5. The memory package according to claim 1 ,
wherein the interface circuit stores the command signal, and
wherein the interface circuit controls an output timing to retime the command signal and outputs the command signal received from the controller to the semiconductor memory.
6. The memory package according to claim 5 , wherein retiming a signal includes at least one of buffering, rearranging to reduce skew, and adjusting a duty cycle of the signal.
7. The memory package according to claim 1 , wherein the interface circuit determines that the command signal corresponds to the read operation of the first data when an address included in the command signal corresponds to a memory cell in the memory package device.
8. The memory package according to claim 7 , wherein the interface circuit retimes and outputs the first data received from the semiconductor memory to the controller during the read operation of the first data.
9. The memory package according to claim 8 , wherein the interface circuit stores and retimes the first data by controlling an output timing.
10. The memory package according to claim 1 , wherein the interface circuit includes a data storage circuit configured to store the second data.
11. The memory package according to claim 1 , wherein the interface circuit further comprises:
a timing control circuit configured to control a timing of the command signal and the read enable signal received from the controller and output the command signal and the read enable signal;
a processor configured to parse the command signal received from the controller and generate a blocking control signal and a data read signal when the command signal corresponds to the interface circuit as a result of parsing; and
a blocking control circuit configured to transmit to the semiconductor memory the command signal and the read enable signal received from the timing control circuit, receive the data strobe signal and the first data from the semiconductor memory, and block the first data in response to the blocking control signal.
12. The memory package according to claim 11 , wherein a data storage circuit reads the second data in response to the data read signal.
13. A memory package comprising:
a semiconductor memory configured to output first data and a data strobe signal during a read operation of the first data; and
an interface circuit configured to receive a command and the data strobe signal from a controller and output the command and the data strobe signal to the semiconductor memory,
wherein the interface circuit is further configured to receive the first data and the data strobe signal from the semiconductor memory and output the first data and the data strobe signal to the controller during the read operation of the first data, and
wherein the interface circuit stores second data during the read operation of the second data, and the interface circuit blocks the first data received from the semiconductor memory and outputs the second data in synchronization with the data strobe signal to the controller.
14. The memory package according to claim 13 , wherein the interface circuit retimes and outputs the command and the data strobe signal received from the controller to the semiconductor memory.
15. The memory package according to claim 14 , wherein the interface circuit stores the command and the data strobe signal and controls an output timing to retime the command and the data strobe signal.
16. The memory package according to claim 13 , wherein the interface circuit retimes and outputs the first data received from the semiconductor memory to the controller during the read operation of the first data, and
wherein the interface circuit stores the first data and controls an output timing to retime the first data.
17. The memory package according to claim 13 , wherein retiming a signal includes at least one of buffering, rearranging to reduce skew, and adjusting a duty cycle of the signal.
18. The memory package according to claim 13 , wherein the interface circuit determines that the command corresponds to the read operation of the first data when an address included in the command corresponds to a memory cell included in the semiconductor memory the memory, and the interface circuit determines that the command corresponds to the read operation of the second data when the address corresponds to the interface circuit.
19. The memory package according to claim 13 , wherein the interface circuit further comprises:
a timing control circuit configured to control a timing of the command and the data strobe signal received from the controller and output the command and the data strobe signal;
a processor configured to parse the command received from the controller and generate a blocking control signal and a data read signal when the command corresponds to the interface circuit as a result of parsing; and
a blocking control circuit configured to transmit to the semiconductor memory, the command and the data strobe signal received from the timing control circuit, receive the data strobe signal and the first data from the semiconductor memory, and block the first data in response to the blocking control signal.
20. The memory package according to claim 19 , wherein a data storage circuit reads the second data in response to the data read signal.