Memory module capable of reducing power consumption and semiconductor system including the same
A memory module may include a power source, a memory device, and a power controller. The power source provides at least one power supply voltage. The memory device operates by being supplied with at least one memory power supply voltage. The power controller supplies the at least one memory power supply voltage by changing a voltage level of the at least one power supply voltage based on operation modes of the memory device.
1 . A memory module comprising:
a power source configured to provide a first power and a second power, each at a different voltage level;
a power controller circuit configured to generate a first memory power from the first power, to generate a second memory power from the second power, and to change the first memory power based on temperature information;
a memory device configured to operate by being supplied with the first memory power and the second memory power; and
a temperature sensor configured to generate the temperature information of the memory device,
wherein the power controller circuit is configured to supply the first memory power having substantially the same level as the first power and to supply the second memory power having substantially the same level as the second power, when a temperature of the memory device is a first temperature.
2 . The memory module according to claim 1 , wherein the power source is included in a power management integrated circuit.
3 . The memory module according to claim 1 , wherein, when the temperature of the memory device is a second temperature lower than the first temperature, the power controller circuit changes the first memory power such that the first memory power has a voltage level lower than a voltage level of the first power.
4 . The memory module according to claim 1 , wherein the power controller circuit supplies the first memory power having a voltage level lower than a voltage level of the first power and supplies the second memory power having substantially the same level as the second power, when the temperature of the memory device is a second temperature lower than the first temperature.
5 . The memory module according to claim 1 , wherein, when the temperature of the memory device is a third temperature higher than the first temperature, the power controller circuit changes the first memory power such that the first memory power has a voltage level higher than a voltage level of the first power.
6 . The memory module according to claim 1 , wherein the power controller circuit supplies the first memory power having a voltage level higher than a voltage level of the first power and supplies the second memory power having substantially the same level as the second power, when the temperature of the memory device is a third temperature higher than the first temperature.
7 . The memory module according to claim 1 , wherein the power source is configured to act as a power management integrated circuit.
8 . The memory module according to claim 1 , wherein the power source is configured to receive at least one power from an external device to provide the first power and the second power.
9 . The memory module according to claim 1 , wherein the power controller circuit is included in a power management integrated circuit.