IP Library Granted Patent US 12,534,693
Granted Patent B2
US 12,534,693 · App. 17/913,624 · Granted Jan 27, 2026

Semiconductor substrate cleaning method, processed semiconductor substrate manufacturing method, and composition for peeling

Inventors: Takahisa Okuno (Toyama, JP); Masaki Yanai (Toyama, JP); Takuya Fukuda (Toyama, JP); Hiroto Ogata (Toyama, JP); Shunsuke Moriya (Toyama, JP); Hiroshi Ogino (Toyama, JP); Tetsuya Shinjo (Toyama, JP)
Assignee: NISSAN CHEMICAL CORPORATION
C11D7/5009B08B3/08C09J5/00C11D7/5013C11D7/5022H01L21/02079B08B2220/01B32B43/006C09J2483/00C11D2111/22Y10T156/1111Y10T156/1116
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Quick Facts
Patent No.
US 12,534,693
App. No.
17/913,624
Granted
Jan 27, 2026
Kind
B2
Abstract

The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (wherein each of L 1 and L 2 represents a C2 to C4 alkyl group, and L 3 represents O or S) in an amount of 80 mass % or more. L 1 - L 3 - L 2   (L)

Claims (11)

1 . A semiconductor substrate cleaning method comprising removing an adhesive layer provided on a semiconductor substrate having connection portions made of a conductive material by contacting the adhesive layer with a remover composition, wherein

the adhesive layer is a film formed from an adhesive composition comprising an adhesive component(S) containing a siloxane adhesive, and the adhesive component(S) comprises a siloxane adhesive containing a polyorganosiloxane component (A) that is curable through hydrosilylation;

the remover composition contains a solvent but no salt; and

the solvent includes an organic solvent represented by formula (L) in an amount of 80 mass % or more:

L 1 - L 3 - L 2   (L)

where L 1 and L 2 each represents a C2 to C5 alkyl group, and L 3 represents O or S.

2 . The semiconductor substrate cleaning method according to claim 1 , wherein the solvent includes the organic solvent represented by formula (L) in an amount of 85 mass % or more.

3 . The semiconductor substrate cleaning method according to claim 2 , wherein the solvent is formed of the organic solvent represented by formula (L).

4 . The semiconductor substrate cleaning method according to claim 1 , wherein L 1 and L 2 are the same group.

5 . The semiconductor substrate cleaning method according to claim 4 , wherein the C2 to C5 alkyl group is an ethyl group, an n-propyl group, or an n-butyl group.

6 . The semiconductor substrate cleaning method according to claim 1 , wherein the adhesive component(S) further comprises at least one selected from an acrylic resin adhesive, an epoxy resin adhesive, a polyamide adhesive, a polystyrene adhesive, a polyimide adhesive, and a phenolic resin adhesive.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2022
From: OKUNO, TAKAHISA; YANAI, MASAKI; FUKUDA, TAKUYA; OGATA, HIROTO; MORIYA, SHUNSUKE; OGINO, HIROSHI; SHINJO, TETSUYA
To: NISSAN CHEMICAL CORPORATION
Reel/Frame 061185/0532 →
Priority Claims (1)
JP 2020-050955 · Mar 23, 2020 · national
Continuity (1)
Related Publication 20230151308A1 · May 18, 2023
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