Method for measuring DIC defect shape on silicon wafer and polishing method
A method for measuring a DIC defect shape on a silicon wafer, the method including steps of: detecting a DIC defect on a main surface of the silicon wafer with a particle counter; specifying position coordinates of the detected DIC defect; and measuring a shape including at least a height or depth of the detected DIC defect by utilizing the specified position coordinates according to phase-shifting interferometry. The method for measuring a DIC defect shape by which the shape including size of DIC defect generated on a main surface of a silicon wafer is easily and precisely measured.
1. A method for measuring a DIC defect shape on a silicon wafer, comprising steps of:
detecting a DIC defect on a main surface of the silicon wafer with a particle counter;
transferring position coordinates of the detected DIC defect from the particle counter to a phase-shifting interferometer; and
positioning the phase-shifting interferometer based on the transferred position coordinates to measure a shape including at least a height or depth of the detected DIC defect, wherein
a width of the DIC defect is on the order of tens of micrometers to hundreds of micrometers.
2. The method for measuring a DIC defect shape according to claim 1 , wherein the main surface of the silicon wafer is a surface on which a device is to be fabricated.
3. A method for polishing a silicon wafer, comprising:
setting a polishing removal amount based on the shape of the DIC defect measured by the method for measuring a DIC defect shape according to claim 1 ; and
polishing the silicon wafer.
4. A method for polishing a silicon wafer, comprising:
setting a polishing removal amount based on the shape of the DIC defect measured by the method for measuring a DIC defect shape according to claim 2 ; and
polishing the silicon wafer.