Semiconductor device comprising semiconductor element; insulating component; lead electrode; and first bonding material, second bonding material, third bonding material, and fourth bonding material made of a same material
A semiconductor device includes: an insulating layer; a circuit pattern on an upper surface of the insulating layer; a semiconductor element bonded to an upper surface of the circuit pattern through a first bonding material; an insulating component bonded to the upper surface of the circuit pattern through a second bonding material; and a lead electrode connecting the semiconductor element to the insulating component, wherein an upper surface of the semiconductor element is bonded to a lower surface of the lead electrode through a third bonding material, an upper surface of the insulating component is bonded to the lower surface of the lead electrode through a fourth bonding material, and the first bonding material, the second bonding material, the third bonding material, and the fourth bonding material are made of a same material.
1 . A semiconductor device, comprising:
an insulating layer;
a circuit pattern disposed on an upper surface of the insulating layer;
a semiconductor element bonded to an upper surface of the circuit pattern through a first bonding material;
an insulating component bonded to the upper surface of the circuit pattern through a second bonding material; and
a lead electrode connecting the semiconductor element to the insulating component,
wherein an upper surface of the semiconductor element is bonded to a lower surface of the lead electrode through a third bonding material,
an upper surface of the insulating component is bonded to the lower surface of the lead electrode through a fourth bonding material,
the first bonding material, the second bonding material, the third bonding material, and the fourth bonding material are made of a same material, and
the insulating component is an insulator.
2 . A semiconductor device, comprising:
a cooling mechanism;
an insulating layer disposed above the cooling mechanism;
a circuit pattern disposed on an upper surface of the insulating layer;
a semiconductor element bonded to an upper surface of the circuit pattern through a first bonding material;
an insulating component bonded to an upper surface of the cooling mechanism through a second bonding material; and
a lead electrode connecting the semiconductor element to the insulating component,
wherein an upper surface of the semiconductor element is bonded to a lower surface of the lead electrode through a third bonding material,
an upper surface of the insulating component is bonded to the lower surface of the lead electrode through a fourth bonding material,
the first bonding material, the second bonding material, the third bonding material, and the fourth bonding material are made of a same material, and
the insulating component is an insulator.
3 . The semiconductor device according to claim 1 ,
wherein the lead electrode includes an external connector that can be connected to an external device, and
the insulating component is disposed between the external connector and a portion of the lead electrode to which the semiconductor element is bonded.
4 . The semiconductor device according to claim 2 ,
wherein the lead electrode includes an external connector that can be connected to an external device, and
the insulating component is disposed between the external connector and a portion of the lead electrode to which the semiconductor element is bonded.
5 . The semiconductor device according to claim 1 , further comprising
a sealing resin sealing a part of the lead electrode, the semiconductor element, and the insulating component,
wherein the insulating component contains Si, AlN, Al 2 O 3 , or SiN with an oxidized film, or a resin with a thermal conductivity higher than a thermal conductivity of the sealing resin.
6 . The semiconductor device according to claim 2 , further comprising a sealing resin sealing a part of the lead electrode, the semiconductor element, and the insulating component,
wherein the insulating component contains Si, AlN, Al 2 O 3 , or SiN with an oxidized film, or a resin with a thermal conductivity higher than a thermal conductivity of the sealing resin.
7 . The semiconductor device according to claim 1 ,
wherein the lead electrode contains copper.
8 . The semiconductor device according to claim 2 ,
wherein the lead electrode contains copper.
9 . The semiconductor device according to claim 1 ,
wherein the first bonding material contains solder or silver.
10 . The semiconductor device according to claim 2 ,
wherein the first bonding material contains solder or silver.
11 . The semiconductor device according to claim 1 ,
wherein a cross-sectional area of the lead electrode is sized so that an exothermic temperature of the lead electrode subjected to a conductor resistance is lower than an exothermic temperature of the semiconductor element when the semiconductor device is driven.
12 . The semiconductor device according to claim 2 ,
wherein a cross-sectional area of the lead electrode is sized so that an exothermic temperature of the lead electrode subjected to a conductor resistance is lower than an exothermic temperature of the semiconductor element when the semiconductor device is driven.
13 . The semiconductor device according to claim 1 , comprising a plurality of insulating components including the insulating component.
14 . The semiconductor device according to claim 2 , comprising a plurality of insulating components including the insulating component.
15 . The semiconductor device according to claim 1 ,
wherein the lead electrode has an inconstant width.
16 . The semiconductor device according to claim 2 ,
wherein the lead electrode has an inconstant width.
17 . The semiconductor device according to claim 1 ,
wherein the semiconductor element is a reverse-conducting insulated gate bipolar transistor.
18 . The semiconductor device according to claim 2 ,
wherein the semiconductor element is a reverse-conducting insulated gate bipolar transistor.
19 . The semiconductor device according to claim 1 ,
wherein the semiconductor element contains SiC as a semiconductor material.
20 . The semiconductor device according to claim 2 ,
wherein the semiconductor element contains SiC as a semiconductor material.
21 . The semiconductor device according to claim 1 ,
wherein the insulating component is configured to prevent current from passing through a direct path through the lead electrode, fourth bonding material, insulating component, second bonding material, and circuit pattern.
22 . The semiconductor device according to claim 2 ,
wherein the insulating component is configured to prevent current from passing through a direct path through the lead electrode, fourth bonding material, insulating component, second bonding material, and circuit pattern.