SOI substrate and related methods
Implementations of a silicon-on-insulator (SOI) die may include a silicon layer including a first side and a second side, and an insulative layer coupled directly to the second side of the silicon layer. The insulative layer may not be coupled to any other silicon layer.
1. A silicon-on-insulator (SOI) die comprising:
a silicon layer comprising a first side and a second side;
an insulative layer coupled directly to the second side of the silicon layer,
wherein the insulative layer is coupled to silicon only through the second side of the silicon layer;
wherein the SOI die is singulated;
wherein the insulative layer comprises an insulative material that fills an entire area within an outer perimeter of the insulative layer; and
wherein the silicon layer is thinned through a backgrinding process.
2. The die of claim 1 , further comprising one or more semiconductor devices on the first side of the silicon layer.
3. The die of claim 1 , wherein the insulative layer comprises a thermally conductive material.
4. The die of claim 1 , wherein the silicon layer comprises no bubbles therein.
5. The die of claim 1 , wherein the silicon layer comprises no implanted gas therein.
6. The die of claim 1 , wherein the silicon layer is between 20-30 microns thick.
7. The die of claim 1 , wherein the insulative layer is between 2,000-5,000 angstroms thick.
8. A silicon-on-insulator (SOI) die comprising:
a silicon layer comprising a first side and a second side;
an insulative layer coupled directly to the second side of the silicon layer,
wherein the insulative layer is coupled to silicon only through the second side of the silicon layer; and
wherein the silicon layer is thinned through a backgrinding process;
wherein the SOI die is singulated;
wherein an outer perimeter of the silicon layer is larger than an outer perimeter of the insulative layer; and
wherein the silicon layer is less than 35 micrometers thick.
9. The die of claim 8 , further comprising one or more semiconductor devices on the first side of the silicon layer.
10. The die of claim 8 , wherein the insulative layer comprises a thermally conductive material.
11. The die of claim 8 , wherein the silicon layer comprises no bubbles therein.
12. The die of claim 8 , wherein the silicon layer comprises no implanted gas therein.
13. The die of claim 8 , wherein the silicon layer is between 20-30 microns thick.
14. A silicon-on-insulator (SOI) die consisting of:
a silicon layer comprising a first side and a second side;
a semiconductor device coupled to the first side of the silicon layer; and
an insulative layer coupled directly to a conductive layer coupled directly to the silicon layer.
15. The die of claim 14 , wherein the insulative layer is not coupled to any other silicon layer.
16. The die of claim 14 , wherein the conductive layer comprises a pattern.
17. The die of claim 14 , wherein the silicon layer comprises no bubbles therein.
18. The die of claim 14 , wherein the silicon layer comprises no implanted hydrogen therein.
19. The die of claim 14 , wherein the conductive layer comprises titanium.
20. The die of claim 14 , wherein the conductive layer is patterned.