IP Library › Granted Patent US 12,713,948
Granted Patent B2
US 12,713,948 · App. 17/951,527 · Granted Aug 18, 2026

Transistor package and process of implementing the transistor package

Inventors: Eng Wah Woo (Ipoh, MY); Soon Lee Liew (Ipoh, MY); Alexander Komposch (Morgan Hill, CA); Arthur Pun (Raleigh, CA)
Assignee: Wolfspeed, Inc.
H10W70/635H10W74/114H10W90/724H10W90/754
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,713,948
App. No.
17/951,527
Granted
Aug 18, 2026
Kind
B2
Abstract

A device includes at least one semiconductor device; a package support configured to support the at least one semiconductor device; electrical connection portions having at least one of the following: electrical connection portions extending from the package support, electrical connection portions configured as a bond wire device connection, electrical connection portions configured as a bump ball connection, and/or electrical connection portions configured as a stud bump connection. Where the electrical connection portions connect between the at least one semiconductor device and the package support.

Claims (56)

1 . A package comprising:

at least one semiconductor device;

a package support configured to support the at least one semiconductor device;

a silicon carbide (SiC) integrated passive device (IPD); and

electrical connection portions comprising at least one of the following: electrical connection portions extending from the package support, electrical connection portions configured as a bond wire device connection, electrical connection portions configured as a bump ball connection, and/or electrical connection portions configured as a stud bump connection,

wherein the electrical connection portions connect between the at least one semiconductor device and the package support; and

wherein the silicon carbide (SiC) integrated passive device (IPD) is between the package support and the at least one semiconductor device.

2 . The package according to claim 1 further comprising a heat sink on the at least one semiconductor device,

wherein the at least one semiconductor device is configured as a flip chip.

3 . The package according to claim 1 wherein the electrical connection portions extend from the package support; and wherein the electrical connection portions comprise a solder connection arranged on a tip thereof.

4 . The package according to claim 3 wherein the solder connection is configured with a plated solder portion; and wherein the electrical connection portions are further between the at least one semiconductor device and the silicon carbide (SiC) integrated passive device (IPD).

5 . The package according to claim 3 wherein the solder connection is configured with solder printing; and wherein the electrical connection portions are further between the at least one semiconductor device and the silicon carbide (SiC) integrated passive device (IPD).

6 . The package according to claim 3 wherein the solder connection is configured with solder arranged to implement a solder reflow; and wherein the electrical connection portions are further between the at least one semiconductor device and the silicon carbide (SiC) integrated passive device (IPD).

7 . The package according to claim 1 further comprising a heat sink on the at least one semiconductor device, wherein the at least one semiconductor device comprises a gallium nitride (GaN) silicon carbide (SiC) transistor.

8 . The package according to claim 1 wherein the package support comprises a printed circuit board (PCB), a printed wiring board (PWB), and/or a printed circuit board assembly (PCBA); wherein the electrical connection portions extend from the package support; and wherein the electrical connection portions are further between the at least one semiconductor device and the silicon carbide (SiC) integrated passive device (IPD).

9 . The package according to claim 1 wherein the electrical connection portions comprise a vertical portion that extends through the package support.

10 . The package according to claim 1 wherein the electrical connection portions comprise a vertical portion implemented by a plated-through hole that extends through the package support.

11 . The package according to claim 1 wherein the electrical connection portions comprise an etched portion of the package support.

12 . The package according to claim 1 wherein the electrical connection portions are configured as a bond wire device connection connected to a bond pad on the package support.

13 . The package according to claim 12 wherein the bond wire device connection comprises a solder connection arranged on a tip thereof.

14 . The package according to claim 1 wherein the electrical connection portions extend from the package support: wherein the electrical connection portions comprise the bump ball connection; and wherein the electrical connection portions are further between the at least one semiconductor device and the silicon carbide (SiC) integrated passive device (IPD).

15 . The package according to claim 14 wherein the bump ball connection is configured with a plurality of metallic bump balls.

16 . The package according to claim 14 wherein the bump ball connection comprises a solder connection arranged on a top surface thereof.

17 . The package according to claim 1 wherein the electrical connection portions extend from the package support; wherein the electrical connection portions are further between the at least one semiconductor device and the silicon carbide (SiC) integrated passive device (IPD); and wherein the electrical connection portions comprise the stud bump connection.

18 . The package according to claim 17 wherein the stud bump connection is arranged on electrical contact pads of the at least one semiconductor device and on bond pads of the package support.

19 . The package according to claim 1 further comprising:

a heat sink; and

an over-mold configured to at least partially surround the at least one semiconductor device.

20 . The package according to claim 1 further comprising a heat sink,

wherein the electrical connection portions are further arranged between the at least one semiconductor device and the silicon carbide (SiC) integrated passive device (IPD).

21 . The package according to claim 1 further

wherein the electrical connection portions are further arranged between the at least one semiconductor device and other components.

22 . The package according to claim 1 wherein the electrical connection portions are further arranged between the package support and other components.

23 . The package according to claim 1 wherein the electrical connection portions are further arranged between the at least one semiconductor device and other components.

24 . A package comprising:

at least one semiconductor device;

a package support configured to support the at least one semiconductor device;

a silicon carbide (SiC) integrated passive device (IPD);

a heat sink on the at least one semiconductor device; and

electrical connection portions configured and/or operable to connect between the at least one semiconductor device and the package support; and

wherein the electrical connection portions connect between the at least one semiconductor device and the package support; and

wherein the silicon carbide (SiC) integrated passive device (IPD) is between the package support and the at least one semiconductor device.

25 . The package according to claim 24

wherein the at least one semiconductor device is configured as a flip chip; and

wherein the electrical connection portions are further between the at least one semiconductor device and the silicon carbide (SiC) integrated passive device (IPD).

26 . The package according to claim 24 further comprising an over-mold configured to at least partially surround the at least one semiconductor device.

27 . A package comprising:

at least one semiconductor device;

a package support configured to support the at least one semiconductor device;

a silicon carbide (SiC) integrated passive device (IPD);

a heat sink on the at least one semiconductor device; and

electrical connection portions configured and/or operable to connect between the at least one semiconductor device and the package support;

wherein the electrical connection portions are between the at least one semiconductor device and the silicon carbide (SiC) integrated passive device (IPD); and

wherein the silicon carbide (SiC) integrated passive device (IPD) is between the package support and the at least one semiconductor device.

28 . The package according to claim 27 wherein the at least one semiconductor device is configured as a flip chip; and wherein the electrical connection portions further connect between the at least one semiconductor device and the package support.

29 . The package according to claim 27 further comprising an over-mold configured to at least partially surround the at least one semiconductor device.

Assignments (8)
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Mar 26, 2026
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 075280/0919 →
RELEASE OF SECURITY INTEREST IN INTELLECTUAL PROPERTY COLLATERAL AT REEL/FRAME NO. 64185/0755 Recorded Sep 30, 2025
From: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WOLFSPEED, INC.
Reel/Frame 072989/0001 →
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0113 →
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0381 →
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0467 →
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0588 →
SECURITY INTEREST Recorded Jun 30, 2023
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION
Reel/Frame 064185/0755 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2022
From: WOO, ENG WAH; LIEW, SOON LEE; KOMPOSCH, ALEXANDER; PUN, ARTHUR
To: WOLFSPEED, INC.
Reel/Frame 061967/0277 →
Continuity (1)
Related Publication 20240105570A1 · Mar 28, 2024
References Cited (226)
US 34861A · Knowlton · 1862 [cited by applicant]
US 4946547A · Palmour et al. · 1990 [cited by applicant]
US 5192987A · Khan et al. · 1993 [cited by applicant]
US 5200022A · Kong et al. · 1993 [cited by applicant]
US 5210051A · Carter · 1993 [cited by applicant]
US 5296395A · Khan et al. · 1994 [cited by applicant]
US 5309012A · Jex et al. · 1994 [cited by applicant]
US RE34861E · Davis et al. · 1995 [cited by applicant]
US 5393993A · Edmond et al. · 1995 [cited by applicant]
US 5523589A · Edmond et al. · 1996 [cited by applicant]
US 6218680B1 · Carter et al. · 2001 [cited by applicant]
US 6316793B1 · Sheppard et al. · 2001 [cited by applicant]
US 6426525B1 · Brindle · 2002 [cited by applicant]
US 6548333B2 · Smith · 2003 [cited by applicant]
US 6825559B2 · Mishra et al. · 2004 [cited by applicant]
US 7030428B2 · Saxler · 2006 [cited by applicant]
US 7078310B1 · Kar-Roy et al. · 2006 [cited by applicant]
US 7135766B1 · Costa et al. · 2006 [cited by applicant]
US 7259402B2 · Edmond et al. · 2007 [cited by applicant]
US 7291529B2 · Slater, Jr. et al. · 2007 [cited by applicant]
US 7354782B2 · Mishra et al. · 2008 [cited by applicant]
US 7544963B2 · Saxler · 2009 [cited by applicant]
US 7548112B2 · Sheppard · 2009 [cited by applicant]
US 7592211B2 · Sheppard et al. · 2009 [cited by applicant]
US 7615774B2 · Saxler · 2009 [cited by applicant]
US 7709269B2 · Smith et al. · 2010 [cited by applicant]
US 7768075B2 · Yilmaz et al. · 2010 [cited by applicant]
US 7851909B2 · Mishra et al. · 2010 [cited by applicant]
US 7906799B2 · Sheppard et al. · 2011 [cited by applicant]
US 7932111B2 · Edmond · 2011 [cited by applicant]
US 8138087B2 · Morel et al. · 2012 [cited by applicant]
US 8143699B2 · Ching et al. · 2012 [cited by applicant]
US 8252682B2 · Yang et al. · 2012 [cited by applicant]
US 8274159B2 · Mishra et al. · 2012 [cited by applicant]
US 8513686B2 · Edmond · 2013 [cited by applicant]
US 8803313B2 · Mishra et al. · 2014 [cited by applicant]
US 8828860B2 · Gruber · 2014 [cited by examiner]
US 9153504B2 · Lai et al. · 2015 [cited by applicant]
US 9226383B2 · Mishra et al. · 2015 [cited by applicant]
US 9252120B2 · Nah · 2016 [cited by examiner]
US 9295166B2 · Gruber · 2016 [cited by examiner]
US 9515011B2 · Wood et al. · 2016 [cited by applicant]
US 9780738B2 · Ota · 2017 [cited by applicant]
US 9812429B2 · Das · 2017 [cited by examiner]
US 9947616B2 · Wood et al. · 2018 [cited by applicant]
US 9966426B2 · Mudakatte et al. · 2018 [cited by applicant]
US 10103233B1 · Khalil et al. · 2018 [cited by applicant]
US 10147686B1 · Lessard et al. · 2018 [cited by applicant]
US 10290701B1 · Chang · 2019 [cited by applicant]
US 10483352B1 · Mokhti et al. · 2019 [cited by applicant]
US 10574198B2 · Shilimkar et al. · 2020 [cited by applicant]
US 11094614B2 · Steinhoff · 2021 [cited by applicant]
US 11257740B2 · Komposch et al. · 2022 [cited by applicant]
US 11990872B2 · Tucker et al. · 2024 [cited by applicant]
US 12230614B2 · Marbell et al. · 2025 [cited by applicant]
US 20010038310A1 · Olofsson et al. · 2001 [cited by applicant]
US 20020066908A1 · Smith et al. · 2002 [cited by applicant]
US 20020167023A1 · Chavarkar et al. · 2002 [cited by applicant]
US 20030102482A1 · Saxler · 2003 [cited by applicant]
US 20030155661A1 · Auburger et al. · 2003 [cited by applicant]
US 20040056277A1 · Karnezos · 2004 [cited by applicant]
US 20040061129A1 · Saxler et al. · 2004 [cited by applicant]
US 20040061214A1 · Crescenzi · 2004 [cited by applicant]
US 20040130037A1 · Mishra et al. · 2004 [cited by applicant]
US 20050040522A1 · Takehara et al. · 2005 [cited by applicant]
US 20050121744A1 · Chang et al. · 2005 [cited by applicant]
US 20050230797A1 · Ho et al. · 2005 [cited by applicant]
US 20060081985A1 · Beach et al. · 2006 [cited by applicant]
US 20060226498A1 · Davies · 2006 [cited by applicant]
US 20070290310A1 · Kusano et al. · 2007 [cited by applicant]
US 20070297120A1 · Ren et al. · 2007 [cited by applicant]
US 20080083954A1 · Tokunaga · 2008 [cited by applicant]
US 20080169474A1 · Sheppard · 2008 [cited by applicant]
US 20090256266A1 · Lao et al. · 2009 [cited by applicant]
US 20100059791A1 · Takagi · 2010 [cited by applicant]
US 20100059879A1 · Bielen · 2010 [cited by applicant]
US 20100178879A1 · Sato et al. · 2010 [cited by applicant]
US 20100244193A1 · Lin et al. · 2010 [cited by applicant]
US 20110024835A1 · Tiemeijer · 2011 [cited by applicant]
US 20110031586A1 · Kang et al. · 2011 [cited by applicant]
US 20110233762A1 · Gruber · 2011 [cited by examiner]
US 20110241074A1 · Okamoto · 2011 [cited by applicant]
US 20120063097A1 · Reza et al. · 2012 [cited by applicant]
US 20120104427A1 · Chan et al. · 2012 [cited by applicant]
US 20120104577A1 · Fukumura et al. · 2012 [cited by applicant]
US 20120139095A1 · Manusharow et al. · 2012 [cited by applicant]
US 20120140432A1 · Andrei · 2012 [cited by applicant]
US 20120167033A1 · Cases et al. · 2012 [cited by applicant]
US 20120168928A1 · Lao et al. · 2012 [cited by applicant]
US 20120256189A1 · McDonald et al. · 2012 [cited by applicant]
US 20120280755A1 · Wright · 2012 [cited by applicant]
US 20130264716A1 · Lin et al. · 2013 [cited by applicant]
US 20130284507A1 · Hattori et al. · 2013 [cited by applicant]
US 20130341656A1 · Chan et al. · 2013 [cited by applicant]
US 20140036405A1 · Takeoka et al. · 2014 [cited by applicant]
US 20140264799A1 · Gowda et al. · 2014 [cited by applicant]
US 20140312458A1 · Ashrafzadeh et al. · 2014 [cited by applicant]
US 20140332941A1 · Viswanathan et al. · 2014 [cited by applicant]
US 20140346569A1 · Vielemeyer et al. · 2014 [cited by applicant]
US 20150244410A1 · Leong et al. · 2015 [cited by applicant]
US 20150249021A1 · Sanchez et al. · 2015 [cited by applicant]
US 20150303881A1 · Blednov et al. · 2015 [cited by applicant]
US 20150310981A1 · Yen et al. · 2015 [cited by applicant]
US 20160087588A1 · Szymanowski et al. · 2016 [cited by applicant]
US 20160090294A1 · Wachter et al. · 2016 [cited by applicant]
US 20160126173A1 · Kim et al. · 2016 [cited by applicant]
US 20160126905A1 · Zhao et al. · 2016 [cited by applicant]
US 20160240471A1 · Klowak et al. · 2016 [cited by applicant]
US 20170034913A1 · Mu et al. · 2017 [cited by applicant]
US 20170117239A1 · Lembeye et al. · 2017 [cited by applicant]
US 20170243812A1 · Kadoguchi et al. · 2017 [cited by applicant]
US 20170271258A1 · Wood et al. · 2017 [cited by applicant]
US 20170271497A1 · Fayed et al. · 2017 [cited by applicant]
US 20170287820A1 · Ahlers et al. · 2017 [cited by applicant]
US 20170372945A1 · Howard et al. · 2017 [cited by applicant]
US 20170372983A1 · Howard · 2017 [cited by applicant]
US 20170373645A1 · Jang et al. · 2017 [cited by applicant]
US 20180040537A1 · Grassmann et al. · 2018 [cited by applicant]
US 20180090475A1 · Zuo et al. · 2018 [cited by applicant]
US 20180096922A1 · Chen · 2018 [cited by applicant]
US 20180114741A1 · Gagnéet al. · 2018 [cited by applicant]
US 20180122750A1 · Lu · 2018 [cited by applicant]
US 20180131329A1 · Tong · 2018 [cited by applicant]
US 20180175802A1 · Wu et al. · 2018 [cited by applicant]
US 20180182717A1 · Shilimkar et al. · 2018 [cited by applicant]
US 20180323159A1 · Kamgaing et al. · 2018 [cited by applicant]
US 20180323295A1 · Okayasu et al. · 2018 [cited by applicant]
US 20190057924A1 · Kim et al. · 2019 [cited by applicant]
US 20190109222A1 · Liu et al. · 2019 [cited by applicant]
US 20190110358A1 · Mu et al. · 2019 [cited by applicant]
US 20190149098A1 · Tanomura · 2019 [cited by applicant]
US 20190173195A1 · Kim et al. · 2019 [cited by applicant]
US 20190173430A1 · Krehbiel et al. · 2019 [cited by applicant]
US 20190181099A1 · Then et al. · 2019 [cited by applicant]
US 20190280374A1 · Kim et al. · 2019 [cited by applicant]
US 20190304887A1 · Ganesan et al. · 2019 [cited by applicant]
US 20190326233A1 · Uscola · 2019 [cited by applicant]
US 20190326258A1 · Hua et al. · 2019 [cited by applicant]
US 20190333878A1 · Wu et al. · 2019 [cited by applicant]
US 20200013692A1 · Formicone · 2020 [cited by applicant]
US 20200021046A1 · Kermalli et al. · 2020 [cited by applicant]
US 20200027849A1 · Trang et al. · 2020 [cited by applicant]
US 20200075479A1 · Khalil et al. · 2020 [cited by applicant]
US 20200091608A1 · Alpman et al. · 2020 [cited by applicant]
US 20200105653A1 · Elsherbini et al. · 2020 [cited by applicant]
US 20200105741A1 · Lin et al. · 2020 [cited by applicant]
US 20200204119A1 · Roberts et al. · 2020 [cited by applicant]
US 20200219866A1 · Cabahug et al. · 2020 [cited by applicant]
US 20200227366A1 · Dogiamis et al. · 2020 [cited by applicant]
US 20200328721A1 · Nanan et al. · 2020 [cited by applicant]
US 20200395474A1 · Bothe et al. · 2020 [cited by applicant]
US 20200411555A1 · Hall et al. · 2020 [cited by applicant]
US 20210028122A1 · Son et al. · 2021 [cited by applicant]
US 20210111105A1 · Kim et al. · 2021 [cited by applicant]
US 20210118835A1 · Wu et al. · 2021 [cited by applicant]
US 20210126593A1 · Roberts et al. · 2021 [cited by applicant]
US 20210175860A1 · Roberts et al. · 2021 [cited by applicant]
US 20210175866A1 · Li et al. · 2021 [cited by applicant]
US 20210194434A1 · Ladhani et al. · 2021 [cited by applicant]
US 20210202408A1 · Khalil et al. · 2021 [cited by applicant]
US 20210225784A1 · Shilimkar et al. · 2021 [cited by applicant]
US 20210265249A1 · Komposch et al. · 2021 [cited by applicant]
US 20210265250A1 · Marbell et al. · 2021 [cited by applicant]
US 20210313282A1 · Noori et al. · 2021 [cited by applicant]
US 20210313284A1 · Noori et al. · 2021 [cited by applicant]
US 20210313285A1 · Noori et al. · 2021 [cited by applicant]
US 20210313293A1 · Noori et al. · 2021 [cited by applicant]
US 20210336585A1 · Mares et al. · 2021 [cited by applicant]
US 20210376807A1 · Lim et al. · 2021 [cited by applicant]
US 20210391234A1 · Lan et al. · 2021 [cited by applicant]
US 20220059427A1 · Kondo et al. · 2022 [cited by applicant]
US 20220084950A1 · Noori et al. · 2022 [cited by applicant]
US 20220321071A1 · Noori et al. · 2022 [cited by applicant]
US 20230260935A1 · Kabir et al. · 2023 [cited by applicant]
US 20230361726A1 · Schultz et al. · 2023 [cited by applicant]
US 20240047324A1 · Hwang · 2024 [cited by examiner]
US 20240047408A1 · Eitan · 2024 [cited by examiner]
US 20240096812A1 · Wu · 2024 [cited by examiner]
CA 2511005C · 2016 [cited by applicant]
CN 1412838A · 2003 [cited by applicant]
CN 1757119B · 2011 [cited by applicant]
CN 104051376A · 2014 [cited by applicant]
CN 204946885U · 2016 [cited by applicant]
CN 110970423A · 2020 [cited by applicant]
EP 1357596A2 · 2003 [cited by applicant]
EP 1670055A1 · 2006 [cited by applicant]
EP 2518764A2 · 2012 [cited by applicant]
EP 2947472A1 · 2015 [cited by applicant]
EP 3629373A1 · 2020 [cited by applicant]
EP 3855486A1 · 2021 [cited by applicant]
EP 3907756A1 · 2021 [cited by applicant]
JP S64013144U · 1989 [cited by applicant]
JP H10004325A · 1998 [cited by applicant]
JP 2002093920A · 2002 [cited by applicant]
JP 2003124435A · 2003 [cited by applicant]
JP 2006086296A · 2006 [cited by applicant]
JP 4830092B2 · 2011 [cited by applicant]
JP 2013546191A · 2013 [cited by applicant]
JP 2014179612A · 2014 [cited by applicant]
JP 2016009697A · 2016 [cited by applicant]
JP 2016219542A · 2016 [cited by applicant]
JP 2019186983A · 2019 [cited by applicant]
JP 6615414B1 · 2019 [cited by applicant]
JP 2020507230A · 2020 [cited by applicant]
KR 20060103395A · 2006 [cited by applicant]
KR 20120102819A · 2012 [cited by applicant]
KR 101288153B1 · 2013 [cited by applicant]
KR 101371907B1 · 2014 [cited by applicant]
KR 20170077133A · 2017 [cited by applicant]
KR 20180019226A · 2018 [cited by applicant]
TW I333278B · 2010 [cited by applicant]
TW 201519379A · 2015 [cited by applicant]
WO WO1999054935A1 · 1999 [cited by applicant]
WO WO2004061973A1 · 2004 [cited by applicant]
WO WO2009097564A1 · 2009 [cited by applicant]
WO WO2017187559A1 · 2017 [cited by applicant]
WO WO2019066878A1 · 2019 [cited by applicant]
WO WO2019097564A1 · 2019 [cited by applicant]
WO WO2019170045A1 · 2019 [cited by applicant]
WO WO2020100219A1 · 2020 [cited by applicant]
WO WO2021167822A1 · 2021 [cited by applicant]
WO WO2021202076A1 · 2021 [cited by applicant]
WO WO2022078725A1 · 2022 [cited by applicant]
U.S. Appl. No. 63/004,985, filed Apr. 3, 2020, Marbell et al. [cited by applicant]
The definition of Redistribution Layers (RDLs), https://semiengineering.com/knowledge_centers/packaging/ redistribution-layers-rdls/; Semiconductor Engineering; © 2013; accessed Nov. 20, 2025; 5 pages. [cited by applicant]
Jin et al.; “Next generation eWIB (embedded wafer level BGA) packaging”: 12 [cited by applicant]