Singulation of integrated circuit package substrates with glass cores
An integrated circuit (IC) device comprises a substrate comprising a glass core. The glass core includes a first surface, a second surface opposite the first surface, and a sidewall between the first surface and the second surface. A build-up layer is on at least the first surface. A plurality of regions is on the sidewall. Each region comprises a cavity in the sidewall, wherein the cavity spans a first distance in a first direction from the first surface toward the second surface. In addition, the cavity comprises a concave surface having a first depth at the first surface and a second depth at the first distance, the second depth being less than the first depth.
1 . An integrated circuit (IC) device comprising:
a substrate comprising a glass core, the glass core having a first surface, a second surface opposite the first surface, first, second, third, and fourth sidewalls between the first and second surfaces, the second sidewall opposite the first sidewall, the fourth sidewall opposite the third sidewall, wherein the first sidewall is spaced away from the second sidewall by a first distance, and the third sidewall is spaced away from the fourth sidewall by a second distance;
a build-up layer on at least the first surface; and
a plurality of regions on the first sidewall, each region comprising a cavity in the first sidewall, wherein the cavity:
spans a third distance in a first direction from the first surface toward the second surface;
spans a first depth at the first surface in a second direction from the first sidewall toward the second sidewall, the first depth being less than the first distance;
comprises a width at the first surface, the width being less than the second distance; and
comprises a concave cavity wall having a second depth at the third distance, the second depth being less than the first depth.
2 . The IC device of claim 1 , wherein the cavity wall comprises a scalloped surface away from the first surface.
3 . The IC device of claim 1 , wherein a first one of the plurality of regions is spaced apart from a second one of the plurality of regions.
4 . The IC device of claim 3 , wherein the first sidewall further comprises an artifact of a mechanical sawing process in a space between the first region and the second region.
5 . The IC device of claim 1 , wherein a first one of the plurality of regions at least partially overlaps with a second one of the plurality of regions.
6 . The IC device of claim 1 , wherein each region further comprises a second cavity in the first sidewall and the cavity wall is a first cavity wall, wherein the second cavity:
spans a fourth distance from the second surface in a third direction toward the first surface; and
comprises a concave second cavity wall having a third depth at the second surface and a fourth depth at the fourth distance, the fourth depth being less than the third depth.
7 . The IC device of claim 6 , wherein a fifth distance between the first surface and the second surface is a sum of the third distance and the fourth distance.
8 . The IC device of claim 1 , wherein the third distance is less than half of a fourth distance between the first surface and the second surface.
9 . The IC device of claim 1 , wherein the third distance is approximately equal to a fourth distance between the first surface and the second surface.
10 . The IC device of claim 1 , wherein the build-up layer comprises a metallization layer and a dielectric material layer.
11 . A system comprising:
an integrated circuit (IC) substrate comprising:
a glass core having a first surface, a second surface opposite the first surface, and a sidewall between the first surface and the second surface;
a build-up layer on at least the first surface;
a plurality of first regions on the sidewall, wherein each first region comprises a cavity in the sidewall, wherein the cavity spans a first distance in a first direction from the first surface toward the second surface; and
at least one second region on the sidewall that includes a chipped portion or a portion containing a crack, wherein the at least one second region is outside of the first regions.
12 . The system of claim 11 , wherein:
each cavity comprises a concave surface having a first depth at the first surface and a second depth at the first distance, the second depth being less than the first depth; and
each cavity comprises a cavity wall comprising a scalloped surface away from the first surface.
13 . The system of claim 11 , wherein:
the build-up layer comprises a metallization layer and a dielectric material layer; and
the system further comprises a power supply coupled with the build-up layer.
14 . A method comprising:
receiving a glass substrate comprising a first surface and a second surface opposite the first surface;
altering a microstructure of the glass substrate by treating a plurality of regions within singulation streets on the first surface with a laser, wherein a plurality of portions of the glass substrate are demarcated by the singulation streets;
forming a first perforation in each of the plurality of regions by removing glass substrate material using a wet etch process on the first surface; and
separating the glass substrate into the plurality of portions by performing mechanical sawing operations along lines coinciding with the plurality of regions.
15 . The method of claim 14 , further comprising:
forming a build-up layer on the first surface; and
removing the build-up layer from the singulation streets.
16 . The method of claim 14 , wherein the glass substrate comprises a build-up layer on at least the first surface, the method further comprising:
removing the build-up layer from the singulation streets.
17 . The method of claim 14 , wherein the first perforation comprises a depth extending from the first surface in a direction perpendicular to the first surface, the depth being substantially equal to one half of a distance between the first surface and the second surface.
18 . The method of claim 14 , wherein the first perforation comprises a depth extending from the first surface in a direction perpendicular to the first surface, and the depth is less than one half of a distance between the first surface and the second surface.
19 . The method of claim 14 , further comprising treating a plurality of regions within singulation streets on the second surface with a laser.
20 . The method of claim 19 , further comprising:
forming a second perforation in each of the plurality of regions using the wet etch process on the second surface, wherein each of the second perforations spans a first distance from the second surface in a direction toward the first surface; and
wherein the second perforations comprise a depth extending from the second surface in a direction perpendicular to the second surface, and the depth is substantially equal to one half of a second distance between the first surface and the second surface.