Combined RF generator and RF solid-state matching network
In one embodiment, a method of matching an impedance is disclosed. An impedance matching network is coupled between a radio frequency (RF) source and a plasma chamber. The matching network includes a variable reactance element (VRE) having different positions for providing different reactances. The RF source is subject to a power control scheme to control a power delivered to the matching network. Based on a determined parameter, a new position for the VRE is determined to reduce a reflected power at the RF input of the matching network. The VRE is altered to the new position while the power control scheme is altered.
1. A system comprising:
an RF source generating an RF signal delivering a power, the RF source being subject to a power control scheme to control the power delivered by the RF source;
an impedance matching network coupled between the RF source and a plasma chamber, the matching network comprising:
an RF input configured to receive the RF signal from the RF source;
an RF output configured to operably couple to the plasma chamber; and
a variable reactance element (VRE), the VRE having different positions for providing different reactances; and
a control circuit configured to:
determine a parameter related to the matching network or the plasma chamber;
based on the determined parameter, determine from the different positions of the VRE a new position for the VRE to reduce a reflected power at the RF input of the matching network;
wherein the power control scheme is configured to be altered; and
wherein, while the power control scheme is altered, the matching network alters the VRE to the new position.
2. The system of claim 1 wherein the system further comprises the plasma chamber.
3. The system of claim 1 wherein the alteration of the power control scheme comprises reducing a gain of the RF source or a gain of a control loop of the control circuit.
4. The system of claim 3 wherein the alteration of the gain comprises altering a gain provided by one or more amplifiers of the RF source.
5. The system of claim 1 wherein the alteration of the power control scheme comprises pausing the power control scheme such that the RF signal is maintained at a current power output.
6. The system of claim 1 :
wherein the matching network provides an information signal to the RF source indicative of a magnitude of an impedance change to be caused at the RF input of the matching network due to the new position of the VRE; and
the alteration of the power control scheme comprises reducing a gain of the RF source, the extent of the reduction of the gain being based on the information signal.
7. The system of claim 6 wherein the information signal forms part of a notice signal, the notice signal being provided by the matching network to the RF source and indicating that the VRE will be altered, and wherein the alteration of the power control scheme is carried out in response to receipt of the notice signal.
8. A method of matching an impedance, the method comprising:
a) operably coupling an impedance matching network between a radio frequency (RF) source and a plasma chamber;
i) the matching network comprising an RF input configured to operably couple to the RF source, an RF output configured to operably couple to the plasma chamber, and a variable reactance element (VRE), the VRE having different positions for providing different reactances; and
ii) the RF source being configured to provide an RF signal to the RF input of the matching network, the RF source being subject to a power control scheme to control a power delivered to the RF input of the matching network;
b) determining a parameter related to the matching network or the plasma chamber;
c) based on the determined parameter, determining from the different positions of the VRE a new position for the VRE to reduce a reflected power at the RF input of the matching network;
d) altering the power control scheme; and
e) while the power control scheme is altered, altering the VRE to the new position.
9. The method of claim 8 wherein the alteration of the power control scheme comprises reducing a gain of the RF source or a gain of a control loop of the control circuit.
10. The method of claim 9 wherein the alteration of the gain comprises altering a gain provided by one or more amplifiers of the RF source.
11. The method of claim 8 wherein the alteration of the power control scheme comprises pausing the power control scheme such that the RF signal is maintained at a current power output.
12. The method of claim 8 :
wherein the matching network provides an information signal to the RF source indicative of a magnitude of an impedance change to be caused at the RF input of the matching network due to the new position of the VRE; and
the alteration of the power control scheme comprises reducing a gain of the RF source, the extent of the reduction of the gain being based on the information signal.
13. The method of claim 12 wherein the information signal forms part of a notice signal, the notice signal being provided by the matching network to the RF source and indicating that the VRE will be altered, and wherein the alteration of the power control scheme is carried out in response to receipt of the notice signal.
14. The method of claim 8 wherein a duration of the alteration of the power control scheme is based on a predetermined period of time.
15. The method of claim 8 :
wherein the matching network provides an information signal to the RF source indicative of a magnitude of an impedance change to be caused at the RF input of the matching network due to the new position of the VRE; and
wherein a duration of the alteration of the power control scheme is based on the information signal.
16. The method of claim 8 :
wherein the matching network further comprises at least one additional VRE; and
wherein each of the different positions for the VRE comprise a combination of a position for the VRE and a position for each of the additional VREs.
17. The method of claim 8 wherein the alteration of the power control scheme comprises altering a power setpoint of the RF source to change the power delivered by the RF source to the RF input of the matching network.
18. The method of claim 17 :
wherein the RF source receives from the matching network a signal indicative of a DC voltage of a chuck of the plasma chamber, the chuck configured to hold a wafer in the plasma chamber, and the DC voltage indicative of a deposited film thickness;
wherein the power setpoint is altered in response to the signal indicative of the DC voltage of the chuck.
19. The method of claim 8 :
wherein a notice signal is provided by the matching network to the RF source and is indicative that the VRE will be altered and of a duration of time; and
wherein the alteration of the power control scheme is carried out for the duration of time indicated by the notice signal.
20. A method of manufacturing a semiconductor, the method comprising:
a) placing a substrate in a plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate;
b) operably coupling an impedance matching network between a radio frequency (RF) source and the plasma chamber, the matching network comprising an RF input configured to operably couple to the RF source, an RF output configured to operably couple to the plasma chamber, and a variable reactance element (VRE), the VRE having different positions for providing different reactances;
c) the RF source providing an RF signal to the RF input of the matching network, the RF source being subject to a power control scheme to control a power delivered to the RF input of the matching network;
d) determining a parameter related to the matching network or the plasma chamber;
e) based on the determined parameter, determining from the different positions of the VRE a new position for the VRE to reduce a reflected power at the RF input of the matching network;
f) altering the power control scheme; and
g) while the power control scheme is altered, altering the VRE to the new position.