Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.
1. A method for fabricating semiconductor device, comprising:
providing a substrate having a fin-shaped structure thereon;
forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion; and
forming a first gate structure and a second gate structure on the SDB structure, wherein a sidewall of the first gate structure is aligned with a sidewall of the SDB structure.
2. The method of claim 1 , further comprising:
forming a gate material layer on the SDB structure;
patterning the gate material layer to form the first gate structure and the second gate structure on the SDB structure;
forming a spacer around each of the first gate structure and the second gate structure;
forming a first source/drain region adjacent to the first gate structure and a second source/drain region adjacent to the second gate structure; and
performing a replacement metal gate (RMG) process to transform the first gate structure and the second gate structure into a first metal gate and a second metal gate.
3. The method of claim 2 , further comprising performing a sidewall image transfer (SIT) process for patterning the gate material layer.
4. The method of claim 1 , wherein the fin-shaped structure is disposed extending along a first direction and the SDB structure is disposed extending along a second direction.
5. The method of claim 4 , wherein the first direction is orthogonal to the second direction.
6. The method of claim 1 , wherein the SDB structure comprises silicon oxycarbonitride (SiOCN).
7. The method of claim 6 , wherein a concentration proportion of oxygen in SiOCN is between 30% to 60%.
8. A method for fabricating semiconductor device, comprising:
providing a substrate having a fin-shaped structure thereon;
forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion;
forming a first gate structure and a second gate structure on the SDB structure; and
forming a first spacer adjacent to the first gate structure and a second spacer adjacent to the second gate structure, wherein a sidewall of the first spacer is aligned with a sidewall of the SDB structure.
9. The method of claim 8 , further comprising:
forming a gate material layer on the SDB structure;
patterning the gate material layer to form the first gate structure and the second gate structure on the SDB structure;
forming the first spacer adjacent to the first gate structure and the second spacer adjacent to the second gate structure;
forming a first source/drain region adjacent to the first gate structure and a second source/drain region adjacent to the second gate structure; and
performing a replacement metal gate (RMG) process to transform the first gate structure and the second gate structure into a first metal gate and a second metal gate.
10. The method of claim 9 , further comprising performing a sidewall image transfer (SIT) process for patterning the gate material layer.
11. The method of claim 8 , wherein the fin-shaped structure is disposed extending along a first direction and the SDB structure is disposed extending along a second direction.
12. The method of claim 11 , wherein the first direction is orthogonal to the second direction.
13. The method of claim 8 , wherein the SDB structure comprises silicon oxycarbonitride (SiOCN).
14. The method of claim 13 , wherein a concentration proportion of oxygen in SiOCN is between 30% to 60%.