Semiconductor package and method of fabricating the same
A semiconductor package includes a first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a plurality of chip connection bumps between the first semiconductor chip and the second semiconductor chip, a protective insulating layer between the first semiconductor chip and the second semiconductor chip, the protective insulating layer contacting the plurality of chip connection bumps, and a first dummy conductive structure at a bottom surface of the second semiconductor chip. When viewed in a plan view, the first dummy conductive structure surrounds an outer boundary of a region where the plurality of chip connection bumps are disposed. The bottom surface of the second semiconductor chip faces the first semiconductor chip. The first dummy conductive structure includes a plurality of dummy patterns separated from each other, and the plurality of dummy patterns are arranged along an edge of the second semiconductor chip.
1 . A semiconductor package comprising:
a first semiconductor chip;
a second semiconductor chip on the first semiconductor chip;
a plurality of chip connection bumps between the first semiconductor chip and the second semiconductor chip;
a protective insulating layer between the first semiconductor chip and the second semiconductor chip, the protective insulating layer contacting the plurality of chip connection bumps; and
a first dummy conductive structure at a bottom surface of the second semiconductor chip,
wherein when viewed in a plan view, the first dummy conductive structure surrounds an outer boundary of a region where the plurality of chip connection bumps are disposed,
wherein the bottom surface of the second semiconductor chip faces the first semiconductor chip,
wherein the first dummy conductive structure includes a plurality of dummy patterns separated from each other, and the plurality of dummy patterns are arranged along an edge of the second semiconductor chip,
wherein the plurality of dummy patterns include:
a plurality of first dummy patterns that are arranged along a first straight line extending in a first horizontal direction and are separated from each other in the first horizontal direction, and
a plurality of second dummy patterns that are arranged along a second straight line extending in a second horizontal direction separated from each other in the second horizontal direction different from the first horizontal direction, and
wherein a distance of two adjacent first dummy patterns of the plurality of first dummy patterns increases toward a crossing point where the first straight line and the second straight line meets.
2 . The semiconductor package of claim 1 ,
wherein at the crossing point, neither one of the plurality of first dummy patterns nor one of the plurality of second dummy patterns is disposed.
3 . The semiconductor package of claim 1 ,
wherein a top surface of the first dummy conductive structure is at a higher vertical level than a bottommost surface of the second semiconductor chip.
4 . The semiconductor package of claim 1 ,
wherein a bottom surface of the first dummy conductive structure, a topmost surface of the protective insulating layer, and the bottom surface of the second semiconductor chip are at substantially a same vertical level as one another.
5 . The semiconductor package of claim 1 ,
wherein a top surface of the first dummy conductive structure, a topmost surface of the protective insulating layer, and the bottom surface of the second semiconductor chip are at substantially a same vertical level as one another.
6 . The semiconductor package of claim 1 , further comprising:
a second dummy conductive structure inside the first semiconductor chip and disposed at a top surface of the first semiconductor chip,
wherein the second dummy conductive structure is at an outer top surface of the top surface of the first semiconductor chip when viewed in the plan view,
wherein the second dummy conductive structure includes a plurality of third dummy patterns, and
wherein each third dummy pattern of the plurality of third dummy patterns overlaps a corresponding first dummy pattern of the plurality of first dummy patterns in a vertical direction.
7 . The semiconductor package of claim 1 ,
wherein the protective insulating layer includes a non-conductive film (NCF) or a die attach film (DAF).
8 . A semiconductor package comprising:
a semiconductor package substrate;
a first semiconductor chip on the semiconductor package substrate;
a plurality of second semiconductor chips stacked on the first semiconductor chip;
a plurality of first chip connection bumps between the semiconductor package substrate and the first semiconductor chip;
a plurality of second chip connection bumps between the first semiconductor chip and a bottommost second semiconductor chip of the plurality of second semiconductor chips or between two adjacent second semiconductor chips of the plurality of second semiconductor chips;
a protective insulating layer between the semiconductor package substrate and the first semiconductor chip, the first semiconductor chip and the bottommost second semiconductor chip, or between the two adjacent second semiconductor chips, the protective insulating layer contacting the plurality of first chip connection bumps or the plurality of second chip connection bumps; and
a first dummy conductive structure at a bottom surface of each second semiconductor chip of the plurality of second semiconductor chips,
wherein when viewed in a plan view, the first dummy conductive structure surrounds an outer boundary of a region where the plurality of second chip connection bumps are disposed,
wherein the bottom surface of each second semiconductor chip of the plurality of second semiconductor chips faces the first semiconductor chip,
wherein the first dummy conductive structure includes a plurality of first dummy patterns arranged along an edge of each second semiconductor chip of the plurality of second semiconductor chips, and
wherein the plurality of first dummy patterns are separated from each other-,
wherein, when viewed in the plan view, each of the plurality of second semiconductor chips includes an outer space surrounding the outer boundary of the region where the plurality of second chip connection bumps,
wherein the outer space includes a first region adjacent to a center of the edge of each second semiconductor chip of the plurality of second semiconductor chips, and a second region adjacent to a vertex of each of the plurality of second semiconductor chips, and
wherein a horizontal distance between two adjacent first dummy patterns of the plurality of first dummy patterns increases toward the second region.
9 . The semiconductor package of claim 8 ,
wherein, when viewed in the plan view, a horizontal distance from the first dummy conductive structure to the outer boundary is greater than a horizontal distance from the first dummy conductive structure to a nearest edge of each second semiconductor chip of the plurality of second semiconductor chips in a direction that is perpendicular to an extension direction of a long axis of the first dummy conductive structure.
10 . The semiconductor package of claim 8 , further comprising:
a second dummy conductive structure at a bottom surface of the first semiconductor chip, the bottom surface of the first semiconductor chip facing the semiconductor package substrate,
wherein the second dummy conductive structure include a plurality of second dummy patterns, and
wherein, when viewed in the plan view, the plurality of second dummy patterns surround an outer boundary of a region where the plurality of first chip connection bumps are disposed, and the plurality of second dummy patterns are arranged along an edge of the first semiconductor chip.
11 . The semiconductor package of claim 8 ,
wherein the first dummy conductive structure is arranged only in the first region.
12 . The semiconductor package of claim 8 ,
wherein a horizontal width of each of the plurality of first dummy patterns is between about 25 micrometers and about 45 micrometers.
13 . The semiconductor package of claim 8 ,
wherein the first semiconductor chip corresponds to a buffer chip configured to control the plurality of second semiconductor chips, and
wherein each of the plurality of second semiconductor chips corresponds to a memory chip.
14 . A method of fabricating a semiconductor package, the method comprising:
arranging a plurality of chip connection bumps on a bottom surface of a second semiconductor chip, the second semiconductor chip including a top surface and the bottom surface;
forming a dummy conductive structure at the bottom surface of the second semiconductor chip, wherein the dummy conductive structure includes a plurality of dummy patterns separated from each other;
forming a protective insulating layer on the bottom surface of the second semiconductor chip, the protective insulating layer adhering to the plurality of chip connection bumps;
stacking the second semiconductor chip on a first semiconductor chip, the first semiconductor chip facing the bottom surface of the second semiconductor chip; and
pre-curing a portion of the protective insulating layer, the portion of the protective insulating layer overlapping the plurality of dummy patterns in a vertical direction,
wherein the bottom surface of the second semiconductor chip includes, when viewed in a plan view:
an inner bottom surface that the plurality of chip connection bumps contact, and
an outer bottom surface surrounding the inner bottom surface,
wherein the dummy conductive structure is at the outer bottom surface of the bottom surface of the second semiconductor chip, and
wherein the plurality of dummy patterns are arranged along an edge of the bottom surface of the second semiconductor chip.
15 . The method of claim 14 ,
wherein the pre-curing of the portion of the protective insulating layer includes performing a heat treatment or a light treatment on the portion of the protective insulating layer.
16 . The method of claim 15 ,
wherein, when the portion of the protective insulating layer is pre-cured by the heat treatment, the portion of the protective insulating layer is cured by a heater.
17 . The method of claim 16 ,
wherein the heater is aligned with at least one of the plurality of dummy patterns in the vertical direction.
18 . The method of claim 14 ,
wherein, when viewed in the plan view, the outer bottom surface includes a first region adjacent to a center of the edge of the second semiconductor chip and a second region adjacent to a vertex of the second semiconductor chip,
wherein the vertex is formed by two adjacent edges of the second semiconductor chip meeting each other, and
wherein the portion of the protective insulating layer that is pre-cured is only in the first region.