Temporary protective film for semiconductor encapsulation molding, lead frame provided with temporary protective film, encapsulation molded body, and method for manufacturing semiconductor package
A temporary protective film for semiconductor encapsulation molding includes a support film and an adhesive layer. The adhesive layer contains a thermoplastic resin and at least one compound selected from the group consisting of sorbitol polyglycidyl ether, polyethylene glycol diglycidyl ether, a glycidyl ether of an aliphatic alcohol having 10 to 20 carbon atoms, glycerol polyglycidyl ether, a polyalkylene glycol ester of a fatty acid having 2 to 30 carbon atoms, a dipentaerythritol ester of a fatty acid having 2 to 20 carbon atoms, polyethylene glycol monoalkyl ether, and polyethylene glycol dialkyl ether.
1. A temporary protective film for semiconductor encapsulation molding, comprising: a support film; and an adhesive layer provided on one surface or both surfaces of the support film, wherein
the adhesive layer comprises
a thermoplastic resin, and
at least one compound selected from the group consisting of sorbitol polyglycidyl ether, polyethylene glycol diglycidyl ether, a glycidyl ether of an aliphatic alcohol having 10 to 20 carbon atoms, glycerol polyglycidyl ether, a polyalkylene glycol ester of a fatty acid having 2 to 30 carbon atoms, a dipentaerythritol ester of a fatty acid having 2 to 20 carbon atoms, polyethylene glycol monoalkyl ether, and polyethylene glycol dialkyl ether, and
wherein the thermoplastic resin comprises at least one selected from the group consisting of an aromatic polyether amideimide, an aromatic polyether imide, an aromatic polyether amide, an aromatic polyamide, an aromatic polyester, an aromatic polyimide, an aromatic polyamideimide, an aromatic polyether, and an aromatic polyester imide.
2. The temporary protective film according to claim 1 , wherein a content of the compound is 5 to 30 parts by mass with respect to 100 parts by mass of a content of the thermoplastic resin.
3. A lead frame provided with a temporary protective film, comprising:
a lead frame having a die pad; and
the temporary protective film for semiconductor encapsulation molding according to claim 1 , wherein
the temporary protective film is bonded to a surface of the lead frame on a side opposite to the semiconductor element in a direction in which the adhesive layer of the temporary protective film comes into contact with the lead frame.
4. A temporarily protected encapsulation molded body, comprising:
a lead frame having a die pad;
a semiconductor element mounted on the die pad on one surface side of the lead frame;
a sealing layer sealing the semiconductor element; and
the temporary protective film according to claim 1 , wherein
the temporary protective film is bonded to a surface of the lead frame on a side opposite to the semiconductor element in a direction in which the adhesive layer of the temporary protective film comes into contact with the lead frame.
5. A method for manufacturing a semiconductor package, the method comprising:
bonding the temporary protective film according to claim 1 to one surface of a lead frame having a die pad in a direction in which the adhesive layer of the temporary protective film comes into contact with the lead frame;
mounting a semiconductor element on a surface of the die pad on a side opposite to the temporary protective film;
forming a sealing layer sealing the semiconductor element to obtain a temporarily protected encapsulation molded body comprising the lead frame, the semiconductor element, the sealing layer, and the temporary protective film; and
peeling off the temporary protective film from the encapsulation molded body.
6. The method according to claim 5 , wherein the lead frame has a plurality of the die pads, and the semiconductor element is mounted on each of the plurality of the die pads, and
the method further comprises dividing the encapsulation molded body subsequent to peeling off the temporary protective film from the encapsulation molded body, to obtain a semiconductor package comprising one die pad and the semiconductor element.
7. The temporary protective film according to claim 1 , wherein the adhesive layer comprises at least one compound selected from the group consisting of polyethylene glycol diglycidyl ether, a glycidyl ether of an aliphatic alcohol having 10 to 20 carbon atoms, a polyalkylene glycol ester of a fatty acid having 2 to 30 carbon atoms, a dipentaerythritol ester of a fatty acid having 2 to 20 carbon atoms, polyethylene glycol monoalkyl ether, and polyethylene glycol dialkyl ether.
8. The temporary protective film according to claim 1 , wherein the adhesive layer is configured to have a 90° peel strength of 500 N/m or less at 200° C. against a lead frame when an adhesive layer side of the temporary protective film is attached to the lead frame and the temporary protective film is then subjected to heat treatment at 180° C. for one hour and, subsequently, at 400° C. for two minutes, followed by cooling to 200° C.