Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate
A silicon carbide epitaxial substrate according to the present disclosure includes: a silicon carbide substrate; a first silicon carbide epitaxial layer disposed on the silicon carbide substrate; and a second silicon carbide epitaxial layer disposed on the first silicon carbide epitaxial layer. When an area density of first particles in the first silicon carbide epitaxial layer is defined as a first area density and an area density of second particles in the second silicon carbide epitaxial layer is defined as a second area density, a value determined by dividing the first area density by the second area density is more than 0.5 and less than 1. The first particles and the second particles each have a maximum diameter of 2 μm to 50 μm.
1 . A silicon carbide epitaxial substrate comprising:
a silicon carbide substrate;
a first silicon carbide epitaxial layer disposed on the silicon carbide substrate; and
a second silicon carbide epitaxial layer disposed on the first silicon carbide epitaxial layer,
wherein when an area density of first particles in the first silicon carbide epitaxial layer is defined as a first area density and an area density of second particles in the second silicon carbide epitaxial layer is defined as a second area density, a value determined by dividing the first area density by the second area density is more than 0.5 and less than 1, and
the first particles and the second particles each have a maximum diameter of 2 μm to 50 μm,
wherein the first particles contact the silicon carbide substrate,
wherein the second particles contact the first silicon carbide epitaxial layer,
wherein each first particle is surrounded by the first silicon carbide epitaxial layer and a part of each first particle is surrounded by the second silicon carbide epitaxial layer, and
wherein the first silicon carbide epitaxial layer is located between the second particles and the silicon carbide substrate.
2 . The silicon carbide epitaxial substrate according to claim 1 , wherein the second area density is less than 10 cm −2 .
3 . The silicon carbide epitaxial substrate according to claim 1 , wherein the first silicon carbide epitaxial layer includes a first region having a first conductivity type and a second region in contact with the first region and having a second conductivity type different from the first conductivity type.
4 . The silicon carbide epitaxial substrate according to claim 3 , wherein in a direction perpendicular to a boundary surface between the first silicon carbide epitaxial layer and the second silicon carbide epitaxial layer, the second region has a thickness of 1 μm or less.
5 . The silicon carbide epitaxial substrate according to claim 1 ,
wherein the first silicon carbide epitaxial layer has a first conductivity type, and
the second silicon carbide epitaxial layer has a second conductivity type different from the first conductivity type.
6 . The silicon carbide epitaxial substrate according to claim 1 ,
wherein the first silicon carbide epitaxial layer has an n-type conductivity type, and
the second silicon carbide epitaxial layer has a p-type conductivity type.
7 . A method of manufacturing a silicon carbide epitaxial substrate, the method comprising:
forming a first silicon carbide epitaxial layer on a silicon carbide substrate in a first reaction chamber at a first temperature;
removing the silicon carbide substrate on which the first silicon carbide epitaxial layer is formed, from the first reaction chamber;
disposing the silicon carbide substrate on which the first silicon carbide epitaxial layer is formed, in a second reaction chamber;
heating the silicon carbide substrate on which the first silicon carbide epitaxial layer is formed, in the second reaction chamber at a second temperature while allowing a gas to flow; and
forming a second silicon carbide epitaxial layer on the first silicon carbide epitaxial layer in the second reaction chamber,
wherein the second temperature is lower than the first temperature.
8 . The method of manufacturing a silicon carbide epitaxial substrate according to claim 7 , wherein the second temperature is 1,500° C. or lower.
9 . The method of manufacturing a silicon carbide epitaxial substrate according to claim 7 , wherein a flow velocity of the gas is 15 cm/second to 200 cm/second under conditions of a temperature of 300 K and a pressure of 1 atmospheric pressure.
10 . The method of manufacturing a silicon carbide epitaxial substrate according to claim 7 , wherein the first reaction chamber is the same as the second reaction chamber.
11 . The method of manufacturing a silicon carbide epitaxial substrate according to claim 7 , wherein the first reaction chamber is different from the second reaction chamber.