IP Library Granted Patent US 12,418,103
Granted Patent B2
US 12,418,103 · App. 18/066,002 · Granted Sep 16, 2025

Antenna package structure

Inventors: Kuan-Neng Chen (Hsinchu, TW); Han-Wen Hu (Hsinchu County, TW); Yi-Chieh Tsai (Taoyuan, TW); Yu-Jiu Wang (Hsinchu, TW); Li Han Chang (Hsinchu, TW)
Assignee: TRON FUTURE TECH INC.
H01Q1/38H01L25/03H01Q3/36H01L24/08H01L24/16H01L24/32H01L2224/08225H01L2224/16227H01L2224/32225
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Quick Facts
Patent No.
US 12,418,103
App. No.
18/066,002
Granted
Sep 16, 2025
Kind
B2
Abstract

An antenna package structure is provided. The antenna package structure includes a glass substrate, an interconnect structure, a plurality of semiconductor chips, and an antenna array structure. The glass substrate has a first surface and a second surface opposite to the first surface. The interconnect structure is disposed over the first surface of the glass substrate. The plurality of semiconductor chips are mounted over the interconnect structure. The antenna array structure is formed on the second surface of the glass substrate. Furthermore, the plurality of semiconductor chips are coupled to the antenna array structure through the interconnect structure and the glass substrate.

Claims (34)

1. An antenna package structure, comprising:

a glass substrate having a first surface and a second surface opposite to the first surface;

an interconnect structure disposed over the first surface of the glass substrate;

a plurality of semiconductor chips mounted over the interconnect structure; and

an antenna array structure formed on the second surface of the glass substrate;

wherein the plurality of semiconductor chips are coupled to the antenna array structure through the interconnect structure and the glass substrate, and the interconnect structure comprises a plurality of dielectric layers, the plurality of dielectric layers comprises a first dielectric layer and a second dielectric layer, wherein the antenna package structure is configured to transmit a RF signal, a thickness of the first dielectric layer is corresponding with a frequency of the RF signal transmitted through the first dielectric layer, and the thickness of the first dielectric layer is greater than a thickness of the second dielectric layer.

2. The antenna package structure of claim 1 , wherein the glass substrate is a via-free glass substrate.

3. The antenna package structure of claim 1 , further comprising a plurality of apertures formed on the first surface of the glass substrate for coupling signals from the interconnect structure to the antenna array structure or coupling signals from the antenna array structure to the interconnect structure.

4. The antenna package structure of claim 1 , wherein the glass substrate comprises a plurality of through glass vias.

5. The antenna package structure of claim 1 , wherein

the first dielectric layer is disposed on the first surface of the glass substrate, the first dielectric layer is configured to have a first redistribution layer for forming a plurality of apertures for transmitting RF signals to the antenna array structure through the glass substrate, and

wherein the first redistribution layer is electrically connected to a ground voltage.

6. The antenna package structure of claim 5 , wherein

the second dielectric layer is disposed on the first dielectric layer and configured to have a second redistribution layer for conducting a supply power, and

wherein the first dielectric layer is formed between the glass substrate and the second dielectric layer.

7. The antenna package structure of claim 6 , wherein the interconnect structure further comprises:

a third dielectric layer disposed on the second dielectric layer and configured to have a third redistribution layer for conducting the RF signals having a frequency in a range of from about 10 GHz to about 28 GHz;

wherein the second dielectric layer is formed between the third dielectric layer and the first dielectric layer, and a thickness of the second dielectric layer is greater than a thickness of the third dielectric layer.

8. The antenna package structure of claim 6 , wherein the thickness of the first dielectric layer is about 20 μm to about 60 μm, and the thickness of the second dielectric layer is about 10 μm.

9. The antenna package structure of claim 1 , wherein the antenna array structure comprises a plurality of phased array antennas, and the phased array antennas are one-to-one mapping to the semiconductor chips.

10. The antenna package structure of claim 1 , wherein the semiconductor chips comprise a plurality of transmission chips for transmitting RF signals to the antenna array structure through the interconnect structure and the glass substrate or a plurality of receiving chips for receiving RF signals from the antenna array structure through the interconnect structure and the glass substrate.

11. The antenna package structure of claim 1 , wherein a side length of the glass substrate is greater than about 40 cm.

12. The antenna package structure of claim 7 , wherein the third redistribution layer comprises a plurality of conductive lines exposed from a dielectric material of the third dielectric layer, and the semiconductor chips are mounted on the conductive lines.

13. An antenna package structure, comprising:

a substrate having a first surface and a second surface opposite to the first surface;

a semiconductor chip mounted over the first surface of the substrate; and

an antenna formed on the second surface of the substrate,

wherein the semiconductor chip is electromagnetically coupled to the antenna through the substrate, the conductive layers are connected by a plurality of conductive vias, each of the plurality of conductive vias comprises a dimple profile, and each of the conductive vias are staggered from each other from a projection direction, the interconnect structure further comprises:

a first dielectric layer disposed on the first surface of the substrate; and

a second dielectric layer disposed on the first dielectric layer, wherein a portion of the second dielectric layer is protruding toward the first dielectric layer through the dimple profile, and wherein a lowest point of a bottom surface of the second dielectric layer is lower than a top surface of the first dielectric layer from a cross-sectional view.

14. The antenna package structure of claim 13 , wherein a thickness of the substrate is no greater than about 2 mm.

15. The antenna package structure of claim 13 , further comprising an interconnect structure formed between the substrate and the semiconductor chip, wherein the interconnect structure comprises no greater than three conductive layers.

16. The antenna package structure of claim 15 , wherein the interconnect structure comprises a plurality of polyimide films, wherein a thickness of each of the polyimide films is different from each other.

17. The antenna package structure of claim 15 , wherein one of the conductive layers is arranged to form an aperture on the first surface of the substrate, and the aperture is configured to transmit electromagnetic signals, wherein a width of the aperture is greater than a lower limit in preventing generation of diffraction, and be less than an upper limit to transmit the electromagnetic signals.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 14, 2022
From: CHEN, KUAN-NENG; HU, HAN-WEN; TSAI, YI-CHIEH; WANG, YU-JIU; CHANG, LI HAN
To: TRON FUTURE TECH INC.
Reel/Frame 062091/0504 →
Continuity (2)
Provisional Application 63351881 · Jun 14, 2022
Related Publication 20230402744A1 · Dec 14, 2023
References Cited (78)
US 5378927A · McAllister · 1995 [cited by examiner]
US 5966102A · Runyon · 1999 [cited by examiner]
US 6320543B1 · Ohata · 2001 [cited by examiner]
US 9153863B2 · Nair · 2015 [cited by examiner]
US 9196951B2 · Baks · 2015 [cited by examiner]
US 9460937B2 · Son · 2016 [cited by examiner]
US 10096558B1 · Chiang · 2018 [cited by examiner]
US 10103450B2 · Dang · 2018 [cited by examiner]
US 10424550B2 · Chiang · 2019 [cited by examiner]
US 10770394B2 · Chen · 2020 [cited by examiner]
US 11380665B2 · Nakano · 2022 [cited by examiner]
US 11508675B2 · Chen · 2022 [cited by examiner]
US 11532575B2 · Lin · 2022 [cited by examiner]
US 12094860B2 · Wang · 2024 [cited by examiner]
US 12243851B2 · Lee · 2025 [cited by examiner]
US 20040184129A1 · Solli · 2004 [cited by examiner]
US 20120206669A1 · Kim · 2012 [cited by examiner]
US 20130099389A1 · Hong · 2013 [cited by examiner]
US 20130258234A1 · Park · 2013 [cited by examiner]
US 20140266947A1 · Chen · 2014 [cited by examiner]
US 20150222014A1 · Stevenson · 2015 [cited by examiner]
US 20150340765A1 · Dang · 2015 [cited by examiner]
US 20160056544A1 · Garcia · 2016 [cited by examiner]
US 20160352023A1 · Dang · 2016 [cited by examiner]
US 20160377675A1 · Ukraintsev · 2016 [cited by examiner]
US 20170186710A1 · Yoon · 2017 [cited by examiner]
US 20180191052A1 · Ndip · 2018 [cited by examiner]
US 20180332151A1 · Kamgaing · 2018 [cited by examiner]
US 20190181085A1 · Chen · 2019 [cited by examiner]
US 20190189572A1 · Chiang · 2019 [cited by examiner]
US 20190198466A1 · Chen · 2019 [cited by examiner]
US 20190221917A1 · Kim · 2019 [cited by examiner]
US 20190279951A1 · Chiang · 2019 [cited by examiner]
US 20190280368A1 · Khan · 2019 [cited by examiner]
US 20190333882A1 · Kamgaing · 2019 [cited by examiner]
US 20200006846A1 · Lasiter · 2020 [cited by examiner]
US 20200058605A1 · Chen · 2020 [cited by examiner]
US 20200112081A1 · Kim · 2020 [cited by examiner]
US 20200176408A1 · Lin · 2020 [cited by examiner]
US 20200203817A1 · Chiang · 2020 [cited by examiner]
US 20200294929A1 · Lu · 2020 [cited by examiner]
US 20200328497A1 · Lin · 2020 [cited by examiner]
US 20200357757A1 · Kim · 2020 [cited by examiner]
US 20200381812A1 · Yeh · 2020 [cited by examiner]
US 20200411456A1 · Chen · 2020 [cited by examiner]
US 20210036405A1 · Han · 2021 [cited by examiner]
US 20210084762A1 · Akejima · 2021 [cited by examiner]
US 20210098860A1 · Kuo · 2021 [cited by examiner]
US 20210118765A1 · Kang · 2021 [cited by examiner]
US 20220052434A1 · Brockett · 2022 [cited by examiner]
US 20220077077A1 · Kim · 2022 [cited by examiner]
US 20220084974A1 · Akejima · 2022 [cited by examiner]
US 20220384310A1 · Kuo · 2022 [cited by examiner]
US 20230077949A1 · Kamgaing · 2023 [cited by examiner]
US 20230178530A1 · Wang · 2023 [cited by examiner]
US 20230197647A1 · Chang Chien · 2023 [cited by examiner]
US 20240258287A1 · Wang · 2024 [cited by examiner]
US 20240371842A1 · Wang · 2024 [cited by examiner]
US 20250226583A1 · Yao · 2025 [cited by examiner]
CN 210897278U · 2020 [cited by applicant]
CN 113300072A · 2021 [cited by examiner]
JP H0856113A · 1996 [cited by applicant]
KR 20220034006A · 2022 [cited by applicant]
TW 201011984A · 2010 [cited by applicant]
TW 201803043A · 2018 [cited by applicant]
TW 202008549A · 2020 [cited by applicant]
WO 2021061251A2 · 2021 [cited by applicant]
Partial European Search Report of EP family patent Application No. 23179267.2, mailed on Nov. 22, 2023. [cited by applicant]
English translation of CN113300072A. [cited by applicant]
English translation of CN210897278U. [cited by applicant]
First office action of KR family patent Application No. 10-2023-0074046, mailed on May 23, 2024. [cited by applicant]
English translation (brief) of the First office action of KR family patent Application No. 10-2023-0074046, mailed on May 23, 2024. [cited by applicant]
Extended European Search Report of EP family patent Application No. 23179267.2, mailed on Apr. 26, 2024. [cited by applicant]
Non-final Office Action and search report of of TW family patent Application No. 111148072, mailed on Mar. 2, 2023. [cited by applicant]
English translation (brief) of the Non-final Office Action and search report of TW family patent Application No. 111148072, mailed on Mar. 2, 2023. [cited by applicant]
First office action of JP family patent Application No. 2023-097270, mailed on Aug. 6, 2024. [cited by applicant]
English translation (Dossier) of the First office action of JP family patent Application No. 2023-097270, mailed on Aug. 6, 2024. [cited by applicant]
English Abstract of JPH0856113A. [cited by applicant]