IP Library Granted Patent US 12,604,650
Granted Patent B2
US 12,604,650 · App. 18/079,994 · Granted Apr 14, 2026

Method for manufacturing light-emitting element and light-emitting device using photolithography technique

Inventors: Shunpei Yamazaki (Setagaya, JP); Sachiko Kawakami (Atsugi, JP); Nobuharu Ohsawa (Zama, JP); Yuji Iwaki (Isehara, JP); Ryota Hodo (Atsugi, JP); Kentaro Sugaya (Atsugi, JP); Shinya Sasagawa (Chigasaki, JP); Takahiro Fujie (Isehara, JP); Yoshikazu Hiura (Atsugi, JP); Toshiki Sasaki (Kawasaki, JP); Takeyoshi Watabe (Atsugi, JP); Kunihiko Suzuki (Isehara, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K71/00H10K85/6572H10K50/171
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Quick Facts
Patent No.
US 12,604,650
App. No.
18/079,994
Granted
Apr 14, 2026
Kind
B2
Abstract

To provide a light-emitting element in which an organic compound layer can be processed at once by a photolithography technique. A first electrode and an organic compound layer including an electron-injection layer are formed over an insulating surface. The electron-injection layer is the outermost layer of the organic compound layer and contains an organic compound having a basic skeleton and an acid dissociation constant pKa of greater than or equal to 1. A sacrificial layer and a mask are formed over the electron-injection layer and the sacrificial layer is processed into an island shape using the mask. With use of the island-shaped sacrificial layer as a mask, the organic compound layer is processed into an island shape to cover the first electrode. Part of the island-shaped sacrificial layer is removed with an acidic chemical solution to expose the electron-injection layer. A second electrode is formed to cover the electron-injection layer.

Claims (44)

1 . A method for manufacturing a light-emitting element, the method comprising:

forming a first electrode over an insulating surface;

forming an organic compound layer over the first electrode, the organic compound layer comprising a light-emitting layer and an electron-injection layer over the light-emitting layer;

forming a sacrificial layer over the electron-injection layer;

processing the organic compound layer and the sacrificial layer into an island shape covering the first electrode by a photolithography technique;

removing part of the sacrificial layer having the island shape with an acidic chemical solution to expose a top surface of the electron-injection layer; and

forming a second electrode over the electron-injection layer,

wherein the electron-injection layer comprises an organic compound having a basic skeleton and an acid dissociation constant pKa of greater than or equal to 1.

2 . The method for manufacturing the light-emitting element, according to claim 1 , wherein the sacrificial layer comprises aluminum.

3 . The method for manufacturing the light-emitting element, according to claim 1 , wherein the acidic chemical solution comprises one or more of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid.

4 . The method for manufacturing the light-emitting element, according to claim 1 , further comprising forming an organic insulating film over the sacrificial layer having the island shape,

wherein the organic insulating film comprises an opening portion overlapping the part of the sacrificial layer having the island shape.

5 . A method for manufacturing a light-emitting element, the method comprising:

forming a first electrode over an insulating surface;

forming an organic compound layer over the first electrode, the organic compound layer comprising a light-emitting layer and an electron-injection layer over the light-emitting layer;

forming a sacrificial layer over the electron-injection layer;

forming a resist mask over the sacrificial layer;

processing the sacrificial layer into an island shape using the resist mask;

processing the organic compound layer into an island shape using the sacrificial layer having the island shape as a mask;

removing part of the sacrificial layer having the island shape with an acidic chemical solution to expose a top surface of the electron-injection layer; and

forming a second electrode over the electron-injection layer,

wherein the electron-injection layer comprises an organic compound having a basic skeleton and an acid dissociation constant pKa of greater than or equal to 1.

6 . The method for manufacturing the light-emitting element, according to claim 5 , further comprising:

forming an insulating film covering the sacrificial layer having the island shape and a side surface of the organic compound layer having the island shape,

wherein in the step of removing part of the sacrificial layer having the island shape, part of the insulating film is removed with the acidic chemical solution.

7 . The method for manufacturing the light-emitting element, according to claim 5 , wherein the sacrificial layer comprises aluminum.

8 . The method for manufacturing the light-emitting element, according to claim 5 , wherein the acidic chemical solution comprises one or more of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid.

9 . The method for manufacturing the light-emitting element, according to claim 5 , further comprising forming an organic insulating film over the sacrificial layer having the island shape,

wherein the organic insulating film comprises an opening portion overlapping the part of the sacrificial layer having the island shape.

10 . A method for manufacturing a light-emitting device, the method comprising:

forming a first pixel electrode and a second pixel electrode over an insulating surface;

forming a first organic compound layer over the first pixel electrode and the second pixel electrode, the first organic compound layer comprising a first light-emitting layer and a first electron-injection layer over the first light-emitting layer;

forming a first sacrificial layer over the first electron-injection layer;

processing the first organic compound layer and the first sacrificial layer into an island shape covering the first pixel electrode by a photolithography technique;

forming a second organic compound layer over the first sacrificial layer having the island shape and the second pixel electrode, the second organic compound layer comprising a second light-emitting layer and a second electron-injection layer over the second light-emitting layer;

forming a second sacrificial layer over the second electron-injection layer;

processing the second organic compound layer and the second sacrificial layer into an island shape covering the second pixel electrode by the photolithography;

removing part of the first sacrificial layer having the island shape and part of the second sacrificial layer having the island shape with an acidic chemical solution to expose a top surface of the first electron-injection layer and a top surface of the second electron-injection layer; and

forming a common electrode over the first electron-injection layer and the second electron-injection layer,

wherein each of the first electron-injection layer and the second electron-injection layer comprises an organic compound having a basic skeleton and an acid dissociation constant pKa of greater than or equal to 1.

11 . The method for manufacturing the light-emitting device, according to claim 10 , wherein each of the first sacrificial layer and the second sacrificial layer comprises aluminum.

12 . The method for manufacturing the light-emitting device, according to claim 10 , wherein the acidic chemical solution comprises one or more of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid.

13 . The method for manufacturing the light-emitting device, according to claim 10 , further comprising forming an organic insulating film over the first sacrificial layer having the island shape and the second sacrificial layer having the island shape,

wherein the organic insulating film comprises an opening portion overlapping the part of the first sacrificial layer having the island shape and the part of the second sacrificial layer having the island shape.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 3, 2023
From: YAMAZAKI, SHUNPEI; KAWAKAMI, SACHIKO; OHSAWA, NOBUHARU; IWAKI, YUJI; HODO, RYOTA; SUGAYA, KENTARO; SASAGAWA, SHINYA; FUJIE, TAKAHIRO; HIURA, YOSHIKAZU; SASAKI, TOSHIKI; WATABE, TAKEYOSHI; SUZUKI, KUNIHIKO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 062865/0163 →
Priority Claims (2)
JP 2021-206530 · Dec 20, 2021 · national
JP 2021-206533 · Dec 20, 2021 · national
Continuity (1)
Related Publication 20230200198A1 · Jun 22, 2023
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