IP Library › Granted Patent US 12,720,786
Granted Patent B2
US 12,720,786 · App. 18/081,855 · Granted Aug 25, 2026

Semiconductor device and method of manufacturing same

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Quick Facts
Patent No.
US 12,720,786
App. No.
18/081,855
Filed
Dec 15, 2022
Granted
Aug 25, 2026
Kind
B2
Art Unit
2815
USPC
257/401
Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 15, 2022
From: KIM, KYUNGHO; KIM, KI HWAN; MOON, KANG HUN; LEE, CHOEUN; JEON, YONGUK
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 062101/0878 →
Priority Claims (1)
KR 10-2022-0069384 · Jun 8, 2022 · national
Continuity (1)
Related Publication 20230402535A1 · Dec 14, 2023
References Cited (16)
US 9608066B1 · Ando · 2017 [cited by examiner]
US 10243060B2 · Chao et al. · 2019 [cited by applicant]
US 10483378B2 · Ching et al. · 2019 [cited by applicant]
US 10930755B2 · Hung et al. · 2021 [cited by applicant]
US 20070145431A1 · Kim et al. · 2007 [cited by applicant]
US 20130285130A1 · Ting et al. · 2013 [cited by applicant]
US 20190148376A1 · Chanemougame · 2019 [cited by examiner]
US 20210066477A1 · Lee et al. · 2021 [cited by applicant]
US 20210273047A1 · Kuan et al. · 2021 [cited by applicant]
US 20220037340A1 · Yang · 2022 [cited by examiner]
US 20220069135A1 · Chu et al. · 2022 [cited by applicant]
KR 100707208B1 · 2007 [cited by applicant]
KR 102171135B1 · 2020 [cited by applicant]
TW 202119588A · 2021 [cited by applicant]
Epitaxial Ald Beo: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability Improvement, Jung Hwan Yum et al., IEEE Transactions on Electron Devices, vol. 58, No. 12, Dec. 2011. [cited by applicant]
Epitaxial MgO as an Alternative Gate Dielectric for SiC Transistor Applications, A. Posadas et al., Applied Physics Letters 92, 233511 Mar. 1, 2008. [cited by applicant]