Uniform low-k inner spacer module in gate-all-around (GAA) transistors
Embodiments are directed to a method of forming a stacked nanosheet and resulting structures having uniform low-k inner spacers. A nanosheet stack is formed opposite a major surface of a substrate. The nanosheet stack includes multiple nanosheets. Cavities are formed between adjacent ones of the multiple nanosheets. The cavities are filled with an oxide material and portions of the oxide material are nitridized to form inner spacers positioned between the adjacent ones of the multiple nanosheets.
1. A method for forming a semiconductor device, the method comprising:
forming a nanosheet stack opposite a major surface of a substrate, the nanosheet stack comprising multiple nanosheets;
forming cavities between adjacent nanosheets of the multiple nanosheets;
filling the cavities with an oxide material; and
nitridizing end portions of the oxide material to form inner spacers positioned between the adjacent nanosheets of the multiple nanosheets.
2. The method of claim 1 further comprising forming a gate over a channel region of the nanosheet stack.
3. The method of claim 1 , wherein the nanosheet stack further comprises a plurality of nanosheets alternating with a plurality of sacrificial layers such that each pair of adjacent nanosheets is separated by a sacrificial layer.
4. The method of claim 3 , wherein each nanosheet of the nanosheet stack has a thickness of about 4 nm to about 10 nm.
5. The method of claim 1 , wherein forming cavities between adjacent nanosheets of the multiple nanosheets comprises removing a sacrificial material using a hydrochloric acid (HCl) vapor etch.
6. The method of claim 1 , wherein filling the cavities with an oxide material comprises conformally depositing an oxide layer comprising silicon dioxide (SiO 2 ) to pinch off the cavity.
7. The method of claim 6 , wherein filling the cavities with an oxide material further comprises removing portions of the oxide layer outside of the cavity.
8. The method of claim 1 , wherein nitridizing portions of the oxide material comprises an ammonia (NH 3 ) diffusion-limited rapid thermal nitridation (RTN).
9. The method of claim 8 , wherein the RTN converts silicon dioxide (SiO 2 ) to silicon nitride (Si 3 N 4 ).
10. The method of claim 9 , wherein the RTN comprises a temperature of about 700 degrees Celsius and an NH 3 partial pressure of about 740 Torr.
11. The method of claim 10 , wherein the nitridized portions of the oxide sheet comprise silicon oxynitride (SiON).
12. The method of claim 11 , wherein the nitridized portions of the oxide material further comprise a nitrogen concentration of about 15 percent to about 18 percent.
13. The method of claim 12 , wherein the nitridized portions of the oxide material comprise a thickness of about two (2) to about six (6) nanometers.
14. A method for forming a semiconductor device, the method comprising:
forming a nanosheet stack opposite a major surface of a substrate, the nanosheet stack comprising multiple nanosheets;
forming cavities between adjacent nanosheets of the multiple nanosheets;
filling the cavities with a first oxide material;
nitridizing end portions of the first oxide material to form a first portion of an inner spacer positioned between the adjacent nanosheets of the multiple nanosheets;
forming a second oxide material adjacent to the first portion of the inner spacer; and
nitridizing end portions of the second oxide material to form a second portion of the inner spacer positioned between the adjacent nanosheets of the multiple nanosheets.
15. The method of claim 14 further comprising merging the first and second portions of the inner spacer.
16. A semiconductor device comprising:
a nanosheet stack formed opposite a major surface of a substrate, the nanosheet stack comprising a first nanosheet vertically stacked over a second nanosheet;
a conductive gate formed over a channel region of the first and second nanosheets; and
a nitridized inner spacer positioned between the first and second nanosheets and adjacent to the conductive gate, wherein the inner space is a uniform low-k inner spacer.
17. The semiconductor device of claim 16 , wherein each nanosheet of the nanosheet stack has a thickness of about 4 nm to about 10 nm.
18. The semiconductor device of claim 16 , wherein the nitridized inner spacer comprises silicon oxynitride (SiON).
19. The semiconductor device of claim 18 , wherein the nitridized inner spacer further comprise a nitrogen concentration of about 15 percent to about 18 percent.
20. The semiconductor device of claim 19 , wherein the nitridized inner spacer comprises a thickness of about two (2) to about six (6) nanometers.