Gate-all-around field-effect-transistor with wrap-around-channel inner spacer
A gate-all-around field effect transistor device is provided. The gate-all-around field effect transistor device includes one or more channel layers on a substrate. The gate-all-around field effect transistor device further includes an inner spacer wrapped around four sides of an end portion of each of the one or more channel layers. The gate-all-around field effect transistor device further includes a portion of an inner spacer liner between a portion of an upper most channel layer and a portion of an outer spacer.
1 . A gate-all-around field effect transistor device, comprising:
one or more channel layers on a substrate;
an inner spacer wrapped around four sides of an end portion of each of the one or more channel layers; and
a portion of an inner spacer liner between a portion of an upper most channel layer and a portion of an outer spacer, the inner spacer filling a vertical space between the one or more channel layers.
2 . The gate-all-around field effect transistor device of claim 1 , further comprising an active gate structure directly on the portion of the inner spacer on the upper most channel layer, wherein the portion of an inner spacer liner is between the active gate structure and an interface between the inner spacer and the outer spacer.
3 . The gate-all-around field effect transistor device of claim 1 , wherein a portion of the inner spacer liner is between a portion of the inner spacer on the upper most channel layer and the portion of an outer spacer.
4 . The gate-all-around field effect transistor device of claim 1 , further comprising source/drains on each end face of the one or more channel layers, wherein the inner spacer and the inner spacer liner separates at least a portion of the source/drains from an active gate structure.
5 . The gate-all-around field effect transistor device of claim 4 , wherein the source/drains are directly on the substrate.
6 . The gate-all-around field effect transistor device of claim 5 , further comprising a bottom dielectric isolation layer between the source/drains and the substrate and between the active gate structure and the substrate.
7 . The gate-all-around field effect transistor device of claim 6 , wherein the inner spacer liner has a thickness in a range of about 1 nanometer (nm) to about 4 nm.
8 . The gate-all-around field effect transistor device of claim 7 , wherein the inner spacer and the inner spacer liner are each made of an electrically insulating dielectric material selected from the group consisting of silicon oxide (SiO), silicon nitride (SiN), silicon oxy-nitride (SiON), silicon carbide (SiC), silicon oxy-carbide (SiOC), silicon oxy-carbo-nitride (SiOCN), silicon boro-carbo-nitride (SiBCN), aluminum oxide (AlO), titanium oxide (TiO), and combinations thereof.
9 . A gate-all-around field effect transistor device, comprising:
one or more channel layers on a substrate;
an inner spacer wrapped around four sides of an end portion of each of the one or more channel layers; and
an inner spacer liner on three sides of a portion of the inner spacer and opposite sidewalls of each of the one or more channel layers, wherein the inner spacer liner is between a portion of an upper most channel layer and a portion of an outer spacer.
10 . The gate-all-around field effect transistor device of claim 9 , further comprising a bottom dielectric isolation layer between source/drains and the substrate and between an active gate structure and the substrate.
11 . The gate-all-around field effect transistor device of claim 10 , further comprising source/drains on each of the end faces of the one or more channel layers, wherein the inner spacer and the inner spacer liner separates at least a portion of the source/drains from the active gate structure.
12 . The gate-all-around field effect transistor device of claim 11 , further comprising an active gate structure directly on the portion of the inner spacer on an upper most channel layer, wherein the portion of an inner spacer liner is between the active gate structure and an interface between the inner spacer and the outer spacer.
13 . The gate-all-around field effect transistor device of claim 12 , wherein the inner spacer and the inner spacer liner are each made of an electrically insulating dielectric material selected from the group consisting of silicon oxide (SiO), silicon nitride (SiN), silicon oxy-nitride (SiON), silicon carbide (SiC), silicon oxy-carbide (SiOC), silicon oxy-carbo-nitride (SiOCN), silicon boro-carbo-nitride (SiBCN), aluminum oxide (AlO), titanium oxide (TiO), and combinations thereof.