IP Library › Granted Patent US 12,309,943
Granted Patent B2
US 12,309,943 · App. 18/089,465 · Granted May 20, 2025

Circuit carrier and manufacturing method thereof and package structure

Inventors: John Hon-Shing Lau (Taoyuan, TW); Ra-Min Tain (Hsinchu County, TW); Cheng-Ta Ko (Taipei, TW); Tzyy-Jang Tseng (Taoyuan, TW); Chun-Hsien Chien (Hsinchu, TW)
Assignee: Unimicron Technology Corp.
H05K3/4682H05K1/0298H05K1/115H05K3/0047H05K3/4038H05K2201/09509
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Quick Facts
Patent No.
US 12,309,943
App. No.
18/089,465
Granted
May 20, 2025
Kind
B2
Abstract

A circuit carrier includes a substrate, a first build-up circuit structure, a second build-up circuit structure, a fine redistribution structure and at least one conductive through hole. The substrate has a top surface and a bottom surface opposite to each other. The first build-up circuit structure is disposed on the top surface of the substrate and electrically connected to the substrate. The second build-up circuit structure is disposed on the bottom surface of the substrate and electrically connected to the substrate. The fine redistribution structure is directly attached on the first build-up circuit structure, wherein a line width and a line spacing of the fine redistribution structure are smaller than those of the first build-up circuit structure. The conductive through hole penetrates the fine redistribution structure and a portion of the first build-up circuit structure and is electrically connected to the fine redistribution structure and the first build-up circuit structure.

Claims (27)

1. A circuit carrier, comprising: a substrate, having a top surface and a bottom surface opposite to each other, wherein the substrate is a dielectric substrate, and further comprises at least one through cavity penetrating the dielectric substrate and connecting the top surface and the bottom surface, at least one first through hole, at least one first conductive through hole, and a dielectric material layer, the at least one first through hole penetrates through the dielectric substrate, an aperture of the at least one through cavity is greater than an aperture of the at least one first through hole, the at least one first conductive through hole is disposed in the at least one first through hole, and the dielectric material layer is disposed in the at least one first through hole to fill a gap between the at least one first conductive through hole and the dielectric substrate; a first build-up circuit structure, disposed on the top surface of the substrate and electrically connected to the substrate; a second build-up circuit structure, disposed on the bottom surface of the substrate and electrically connected to the substrate; a fine redistribution structure, directly attached on the first build-up circuit structure, wherein a line width and a line spacing of the fine redistribution structure are smaller than a line width and a line spacing of the first build-up circuit structure; at least one second conductive through hole, penetrating the fine redistribution structure and a portion of the first build-up circuit structure and electrically connected to the fine redistribution structure and the first build-up circuit structure; and at least one embedded block, fixed in the at least one through cavity, wherein the at least one embedded block comprises an upper surface and a lower surface opposite to each other, at least one opening, and at least one via penetrating through the at least one embedded block and connecting the upper surface and the lower surface; at least one electronic component, disposed in the at least one opening of the at least one embedded block, wherein the first build-up circuit structure is electrically connected with the at least one electronic component; and at least one first conductive via, disposed in the at least one via of the at least one embedded block and electrically connecting the first build-up circuit structure and the at least one second build-up circuit structure.

2. The circuit carrier as claimed in claim 1 , wherein the substrate further comprises: a core layer, having the top surface and the bottom surface; a first circuit layer, disposed on the top surface, wherein the first build-up circuit structure is electrically connected to the first circuit layer; a second circuit layer, disposed on the bottom surface, wherein the second build-up circuit structure is electrically connected to the second circuit layer; and at least one second conductive via, penetrating the core layer and electrically connected to the first circuit layer and the second circuit layer.

3. The circuit carrier as claimed in claim 1 further comprising: a dielectric material, wherein the at least one opening of the at least one embedded block is at least one second through hole, the dielectric material is filled in the at least one via and the at least one second through hole, and covers the at least one first conductive via located in the at least one via and the at least one electronic component located in the at least one second through hole.

4. The circuit carrier as claimed in claim 1 , wherein the first build-up circuit structure comprises a plurality of dielectric layers, a plurality of circuit layers and a plurality of via holes, the plurality of dielectric layers and the plurality of circuit layers are alternately stacked, the plurality of via holes are electrically connected to two adjacent circuit layers of the plurality of circuit layers, the plurality of circuit layers are electrically connected to the substrate through the plurality of via holes, and the at least one second conductive through hole is electrically connected to a plurality of pads of the fine redistribution structure and an outmost circuit layer of the plurality of circuit layers, and at least one layer of the dielectric layers is a photosensitive dielectric layer or an Ajinomoto build-up film.

5. The circuit carrier as claimed in claim 1 , wherein the second build-up circuit structure comprises a plurality of dielectric layers, a plurality of circuit layers and a plurality of via holes, the plurality of dielectric layers and the plurality of circuit layers are alternately stacked, the plurality of via holes are electrically connected to two adjacent circuit layers of the plurality of circuit layers, and the plurality of circuit layers are electrically connected to the substrate through the plurality of via holes.

6. The circuit carrier as claimed in claim 5 , further comprising:

a solder mask layer, disposed on the second build-up circuit structure, covering an outmost dielectric layer of the plurality of dielectric layers and exposing a portion of an outmost circuit layer of the plurality of circuit layers; and

a plurality of solder balls, disposed on the outmost circuit layer exposed by the solder mask layer.

7. The circuit carrier as claimed in claim 1 , wherein the fine redistribution structure comprises a plurality of redistribution circuits, a plurality of via holes, a plurality of dielectric layers, and a plurality of pads, and the plurality of redistribution circuits and the plurality of dielectric layers are alternately stacked, the plurality of via holes are electrically connected to adjacent two redistribution circuits of the plurality of redistribution circuits, the plurality of pads are electrically connected to the plurality of redistribution circuits through the plurality of via holes, and at least one layer of the dielectric layers is a photosensitive dielectric layer.

8. The circuit carrier as claimed in claim 1 , wherein the line width and the line spacing of the fine redistribution structure are respectively less than 1 micrometer.

9. A package structure, comprising: a circuit carrier, comprising: a substrate, having a top surface and a bottom surface opposite to each other wherein the substrate is a dielectric substrate, and further comprises at least one through cavity penetrating the dielectric substrate and connecting the top surface and the bottom surface, at least one first through hole, at least one first conductive through hole, and a dielectric material layer, the at least one first through hole penetrates through the dielectric substrate, an aperture of the at least one through cavity is greater than an aperture of the at least one first through hole, the at least one first conductive through hole is disposed in the at least one first through hole, and the dielectric material layer is disposed in the at least one through hole to fill a gap between the at least one first conductive through hole and the dielectric substrate; a first build-up circuit structure, disposed on the top surface of the substrate and electrically connected to the substrate; a second build-up circuit structure, disposed on the bottom surface of the substrate and electrically connected to the substrate; a fine redistribution structure, directly attached on the first build-up circuit structure, wherein a line width and a line spacing of the fine redistribution structure are smaller than a line width and a line spacing of the first build-up circuit structure; at least one second conductive through hole, penetrating the fine redistribution structure and a portion of the first build-up circuit structure and electrically connected to the fine redistribution structure and the first build-up circuit structure; at least one embedded block, fixed in the at least one through cavity, wherein the at least one embedded block comprises an upper surface and a lower surface opposite to each other, at least one opening, and at least one via penetrating through the at least one embedded block and connecting the upper surface and the lower surface; at least one electronic component, disposed in the at least one opening of the at least one embedded block, wherein the first build-up circuit structure is electrically connected with the at least one electronic component; and at least one first conductive via, disposed in the at least one via of the at least one embedded block and electrically connecting the first build-up circuit structure and the at least one second build-up circuit structure; and at least one chip, disposed on the fine redistribution structure of the circuit carrier and electrically connected to the circuit carrier.

10. The package structure as claimed in claim 9 , wherein the substrate further comprises:

a core layer, having the top surface and the bottom surface;

a first circuit layer, disposed on the top surface, wherein the first build-up circuit structure is electrically connected to the first circuit layer;

a second circuit layer, disposed on the bottom surface, wherein the second build-up circuit structure is electrically connected to the second circuit layer; and

at least one conductive via penetrating the core layer and electrically connected to the first circuit layer and the second circuit layer.

11. The package structure as claimed in claim 9 , wherein the circuit carrier further comprising: a dielectric material, wherein the at least one opening of the at least one embedded block is at least one second through hole, the dielectric material is filled in the at least one via and the at least one second through hole, and covers the at least one first conductive via located in the at least one via and the at least one electronic component located in the at least one second through hole.

12. The package structure as claimed in claim 9 , wherein the first build-up circuit structure comprises a plurality of dielectric layers, a plurality of circuit layers and a plurality of via holes, the plurality of dielectric layers and the plurality of circuit layers are alternately stacked, the plurality of via holes are electrically connected to two adjacent circuit layers of the plurality of circuit layers, the plurality of circuit layers are electrically connected to the substrate through the plurality of via holes, and the at least one second conductive through hole is electrically connected to a plurality of pads of the fine redistribution structure and an outmost circuit layer of the plurality of circuit layers, and at least one layer of the dielectric layers is a photosensitive dielectric layer or an Ajinomoto build-up film.

13. The package structure as claimed in claim 9 , wherein the second build-up circuit structure comprises a plurality of dielectric layers, a plurality of circuit layers and a plurality of via holes, the plurality of dielectric layers and the plurality of circuit layers are alternately stacked, the plurality of via holes are electrically connected to two adjacent circuit layers of the plurality of circuit layers, and the plurality of circuit layers are electrically connected to the substrate through the plurality of via holes.

14. The package structure as claimed in claim 13 , wherein the circuit carrier further comprising:

a solder mask layer, disposed on the second build-up circuit structure, covering an outmost dielectric layer of the plurality of dielectric layers and exposing a portion of an outmost circuit layer of the plurality of circuit layers; and

a plurality of solder balls, disposed on the outmost circuit layer exposed by the solder mask layer.

15. The package structure as claimed in claim 9 , wherein the fine redistribution structure comprises a plurality of redistribution circuits, a plurality of via holes, a plurality of dielectric layers, and a plurality of pads, and the plurality of redistribution circuits and the plurality of dielectric layers are alternately stacked, the plurality of via holes are electrically connected to adjacent two redistribution circuits of the plurality of redistribution circuits, the plurality of pads are electrically connected to the plurality of redistribution circuits through the plurality of via holes, and at least one layer of the dielectric layers is a photosensitive dielectric layer.

16. The package structure as claimed in claim 9 , wherein the line width and the line spacing of the fine redistribution structure are respectively less than 1 micrometer.

17. The package structure as claimed in claim 9 , further comprising:

a plurality of solder balls, disposed between the at least one chip and the fine redistribution structure; and

an underfill, disposed between the at least one chip and the fine redistribution structure and covering the plurality of solder balls.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2023
From: LAU, JOHN HON-SHING; TAIN, RA-MIN; KO, CHENG-TA; TSENG, TZYY-JANG; CHIEN, CHUN-HSIEN
To: UNIMICRON TECHNOLOGY CORP.
Reel/Frame 062264/0647 →
Priority Claims (3)
TW 107136704 · Oct 18, 2018 · national
TW 108119700 · Jun 6, 2019 · national
TW 110148855 · Dec 27, 2021 · national
Continuity (7)
Continuation In Part 17219898 · Apr 1, 2021
Division 16535102 · Aug 8, 2019
Continuation In Part 16244113 · Jan 10, 2019
Continuation In Part 17674837 · Feb 18, 2022
Provisional Application 63213667 · Jun 22, 2021
Provisional Application 62682181 · Jun 8, 2018
Related Publication 20230137841A1 · May 4, 2023
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Cited By (1)
US 12,708,006