Multilayer ceramic electronic device and manufacturing method of the same
A multilayer ceramic device includes a multilayer chip. The multilayer chip has a capacity section, a side margin and an intermediate portion. The intermediate portion is provided between the capacity section and the side margin. An A/B ratio is larger in the side margin than in the capacity section, and is smaller in the intermediate portion than in the capacity section.
1. A multilayer ceramic device comprising:
a multilayer chip that has a multilayer portion in which a plurality of dielectric layers and a plurality of internal electrode layers are alternately stacked, a main component of the plurality of dielectric layers being a ceramic having a perovskite structure represented by a general formula ABO 3 having an A site and a B site, the plurality of internal electrode layers being arranged so as to be alternately exposed on two opposing end faces of the multilayer chip, and has an upper face and a lower face in a stacking direction and two side faces in addition to the two end faces,
wherein the multilayer chip has a capacity section, a side margin and an intermediate portion, the capacity section having a structure in which internal electrode layers connected to different end faces face each other, the side margin covering end portions of the plurality of dielectric layers and the plurality of internal electrode layers on ends on the side of the two side faces, a main component of the side margin being a ceramic having a perovskite structure represented by a general formula ABO 3 having an A site and a B site, the intermediate portion being provided between the capacity section and the side margin, a main component of the intermediate portion being a ceramic having a perovskite structure represented by a general formula ABO 3 , and
wherein an A/B ratio is larger in the side margin than in the capacity section, and is smaller in the intermediate portion than in the capacity section.
2. The multilayer ceramic electronic device as claimed in claim 1 , wherein main components of the plurality of dielectric layers, the side margin and the intermediate portion are barium titanate.
3. The multilayer ceramic electronic device as claimed in claim 1 , wherein the A/B ratio of the plurality of dielectric layers in the capacity section is 0.980 or less.
4. The multilayer ceramic electronic device as claimed in claim 1 , wherein the A/B ratio of the plurality of dielectric layers in the capacity section is 0.970 or more.
5. The multilayer ceramic electronic device as claimed in claim 1 , wherein the A/B ratio of the plurality of dielectric layers in the capacity section is 0.975 or more.
6. The multilayer ceramic electronic device as claimed in claim 1 , wherein the A/B ratio of the side margin is 1.005 or more and 1.010 or less.
7. The multilayer ceramic electronic device as claimed in claim 1 , wherein the A/B ratio of the side margin is 1.008 or less.
8. The multilayer ceramic electronic device as claimed in claim 1 , wherein the A/B ratio of the side margin is 1.006 or less.
9. The multilayer ceramic electronic device as claimed in claim 1 , wherein the A/B ratio of the intermediate portion is 0.960 or less.
10. The multilayer ceramic electronic device as claimed in claim 1 , wherein the A/B ratio of the intermediate portion is 0.955 or less.
11. The multilayer ceramic electronic device as claimed in claim 1 , wherein the A/B ratio of the intermediate portion is 0.950 or more.
12. The multilayer ceramic electronic device as claimed in claim 1 ,
wherein the side margin includes pores,
wherein a ratio of an area of the pores in a cross section of the side margin is less than 10%.
13. The ceramic electronic device as claimed in claim 1 , wherein the plurality of dielectric layers include at least one of zirconium and hafnium in the B site of the perovskite structure.
14. A manufacturing method of a multilayer ceramic electronic device comprising:
preparing a ceramic multilayer structure that has a multilayer structure, an intermediate sheet and a side margin sheet, the multilayer structure having a structure in which a plurality of ceramic green sheets and a plurality of internal electrode patterns are alternately stacked, a main component of the plurality of ceramic green sheets being a ceramic having a perovskite structure represented by a general formula ABO 3 having an A site and a B site, the plurality of internal electrode patterns being arranged so as to be alternately exposed on two opposing end faces of the multilayer portion, the intermediate sheet and the side margin sheet being stacked in order on two side faces of the multilayer structure, the two side faces being other than an upper face, a lower face in a stacking direction and the two end faces, a main component of the intermediate sheet being a ceramic having a perovskite structure represented by a general formula ABO 3 having an A site and a B site, a main component of the side margin sheet being a ceramic having a perovskite structure represented by a general formula ABO 3 having an A site and a B site; and
firing the ceramic multilayer structure,
wherein an A/B ratio is larger in the side margin sheet than in the ceramic green sheet and is smaller in the intermediate sheet than in the ceramic green sheet.
15. The method as claimed in claim 14 , wherein main components of the ceramic green sheet, the intermediate sheet and the side margin sheet are barium titanate.
16. The method as claimed in claim 14 , wherein the A/B ratio of the ceramic green sheet is 0.980 or less.
17. The method as claimed in claim 14 , wherein the A/B ratio of the ceramic green sheet is 0.970 or more.
18. The method as claimed in claim 14 , wherein the A/b ratio of the side margin sheet is 1.005 or more and 1.010 or less.
19. The method as claimed in claim 14 , wherein the A/B ratio of the intermediate sheet is 0.960 or less.
20. The method as claimed in claim 14 , wherein the A/B ratio of the intermediate sheet is 0.950 or more.