Schottky diode
A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.
1 . A Schottky diode comprising:
a substrate or other supporting body or structure;
a first electrode formed directly or indirectly on a first region of a surface of the substrate or other supporting body or structure;
a second electrode; and
a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface,
wherein
the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane,
the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction,
at least a portion of the second projection lies outside the first projection,
one of the first interface and the second interface provides a Schottky contact,
said body comprises a first side and a second side, said second side being spaced from the first side by a thickness of said body in said first direction, and
said first planar region being on said first side of the body and said second planar region being on said second side of the body,
the Schottky diode further comprising a dielectric body arranged to cover at least a second region of said surface of the substrate or other supporting body or structure adjacent the first region,
wherein said body of semiconductive material comprises a first portion, arranged over the first electrode and connected to the first electrode at said first interface, and a second portion arranged over a portion of the body of dielectric material covering said second region,
and wherein said second electrode is formed at least partly on said second portion of the body of semiconductive material,
wherein a portion, but not all, of said first projection lies inside said second projection,
and wherein a projection, in the first direction, of the second planar region onto the first plane lies completely outside a projection, in the first direction, of the first planar region onto the first plane.
2 . The diode in accordance with claim 1 , wherein said second plane is parallel to said first plane.
3 . The diode in accordance with claim 1 , wherein said first interface consists of said first planar region.
4 . The diode in accordance with claim 1 , wherein said second interface consists of said second planar region.
5 . The diode in accordance with claim 1 , wherein said dielectric body comprises a window, and said first interface is arranged inside said window.
6 . The diode in accordance with claim 5 , wherein said first portion of said body of semiconductive material at least partly fills said window, and said second portion of said body of semiconductive material extends laterally from the window and covers at least a portion of a surface of said dielectric body.
7 . The diode in accordance with claim 6 , wherein said second electrode is arranged to cover at least part of the second portion of said body of semiconductive material.
8 . The diode in accordance with claim 1 , wherein at least one of the first and second interfaces comprises a processed portion of at least one of: the first electrode; the second electrode; and the body of semiconductive material.
9 . The diode in accordance with claim 1 , wherein the body of semiconductive material comprises a first layer and a second layer, the first interface comprising a portion of the first layer, and the second interface comprising a portion of the second layer.
10 . The diode in accordance with claim 1 , wherein the first electrode is the Schottky electrode and the second electrode is an ohmic electrode.
11 . The diode in accordance with claim 1 , wherein the first electrode is an ohmic electrode and the second electrode is the Schottky electrode.
12 . The diode in accordance with claim 1 , wherein at least one of the first electrode and the second electrode comprises a material selected from a list comprising: a metal; a metal alloy; a transparent conductive oxide; a metal nitride; a carbon material; a conducting polymer; or a semiconductor material.
13 . The diode in accordance with claim 1 , wherein the semiconductive material is selected from a list comprising: compound semiconductors, metal oxides; metal oxynitrides; inorganic semiconductors; organic semiconductors; polymer semiconductors; 2D materials; chalcogenides; and perovskites; any of the preceding semiconductor materials, also doped or containing a doping gradient, and either n-type or p-type.
14 . The diode in accordance with claim 1 , wherein the diode is a thin film Schottky diode.
15 . The diode in accordance with claim 1 , wherein at least one of the semiconductive material, the first electrode, the second electrode, and said dielectric material is substantially transparent at least to visible light.
16 . The diode in accordance with claim 1 , wherein one of the first and second electrodes comprises a body of titanium and a layer comprising, or consisting of, at least one titanium oxide or suboxide formed on a surface of said body of titanium, and wherein the interface providing the Schottky contact comprises or consists of an interface between the body of semiconductive material and said layer comprising, or consisting of, at least one titanium oxide or suboxide.
17 . The diode in accordance with claim 1 , wherein said projection of the second planar region onto the first plane lies partly inside said first projection of the first electrode.
18 . The diode in accordance with claim 1 , wherein said second interface comprises a plurality of planar regions, and said second planar region is one of said plurality of planar regions.
19 . The diode in accordance with claim 18 , wherein said plurality of planar regions comprises a third planar region, wherein a projection, in the first direction, of the third planar region onto the first plane lies completely inside said projection, in the first direction, of the first planar region onto the first plane.
20 . The circuit comprising at least a first diode in accordance with claim 1 , and a second diode in accordance with claim 1 , wherein the first and second planar regions of the first diode are offset by a first distance and the first and second planar regions of the second diode are offset by a second distance, said second distance being different from the first distance, and/or wherein the circuit is an integrated circuit.
21 . A method of manufacturing a Schottky diode comprising a first electrode, a second electrode, and a body of semiconductive material connecting the first and second electrodes, the method comprising:
forming a first electrode on a first region of a substrate surface;
forming a body of dielectric material covering at least a second region of the substrate surface adjacent the first region, the body of dielectric material comprising a window through which at least a portion of the first electrode is visible;
forming a body of semiconductive material comprising a first portion, arranged over the first electrode and connected to the first electrode at a first interface, and a second portion arranged over a portion of the body of dielectric material covering said second region of the substrate surface, wherein said first portion of the body of semiconductive material is formed inside said window; and
forming a second electrode on at least said second portion of the body of semiconductive material, the second electrode being connected to the body of semiconductive material at a second interface.
22 . The method in accordance with claim 21 , wherein said body of dielectric material covers a portion of the first electrode.
23 . The method in accordance with claim 21 , wherein:
the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane;
the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction,
at least a portion of the second projection lies outside the first projection,
one of the first interface and the second interface provides a Schottky contact,
said body of semiconductive material comprises a first side and a second side, said second side being spaced from the first side by a thickness of said body of semiconductive material in said first direction,
said first planar region being on said first side of the body of semiconductive material and said second planar region being on said second side of the body of semiconductive material,
wherein said second electrode is formed at least partly on said second portion of the body of semiconductive material,
a portion, but not all, of said first projection lies inside said second projection,
and a projection, in the first direction, of the second planar region onto the first plane lies completely outside a projection, in the first direction, of the first planar region onto the first plane.
24 . The method in accordance with claim 21 , wherein the first interface has a first projection on the substrate surface, the second interface has a second projection on the substrate surface, and the second projection is offset from the first projection by a distance.
25 . The method in accordance with claim 21 , wherein the first interface comprises a first surface portion of the first electrode, and the method further comprises processing said first surface portion of the first electrode before forming the body of semiconductive material.
26 . The method in accordance with claim 25 , wherein the first electrode comprises a body of titanium and said processing comprises processing said first surface portion to form a layer comprising, or consisting of, at least one titanium oxide or suboxide.
27 . The method in accordance with claim 21 , wherein the second interface comprises a surface portion of the body of semiconductive material, and the method further comprises processing said surface portion of the body of semiconductive material before forming the second electrode.
28 . The method in accordance with claim 21 , wherein the method further comprises selectively processing at least one portion of the body of semiconductive material.
29 . The method in accordance with claim 21 , further comprising implanting ions to dope, or increase the doping of, at least a portion of the body of semiconductive material.
30 . A method of manufacturing a Schottky diode comprising a first electrode, a second electrode, and a body of semiconductive material connecting the first and second electrodes, the method comprising:
forming a first electrode on a first region of a substrate surface;
forming a body of dielectric material covering at least a second region of the substrate surface adjacent the first region;
forming a body of semiconductive material comprising a first portion, arranged over the first electrode and connected to the first electrode at a first interface, and a second portion arranged over a portion of the body of dielectric material covering said second region of the substrate surface, wherein said body of semiconductive material comprises at least two layers; and
forming a second electrode on at least said second portion of the body of semiconductive material, the second electrode being connected to the body of semiconductive material at a second.