Semiconductor device including source/drain pattern having stacking fault
A semiconductor device includes an active pattern having a lower pattern, and a plurality of sheet patterns spaced apart from the lower pattern in a first direction; first and second structures disposed on the lower pattern, wherein the first and second structures are arranged and spaced apart from each other in a second direction; a source/drain recess defined between first and second gate structures; and a source/drain pattern filling the source/drain recess, wherein the source/drain pattern includes a stacking fault spaced apart from the lower pattern.
1 . A semiconductor device, comprising:
an active pattern including a lower pattern and sheet patterns, the sheet patterns being spaced apart from the lower pattern in a first direction which is a vertical direction;
first and second gate structures on the lower pattern, the first and second gate structures being spaced apart from each other in a second direction which is a horizontal direction;
a source/drain recess between the first and second gate structures, the source/drain recess extending vertically from a first height below a lowermost sheet pattern of the sheet patterns to a second height above an uppermost sheet pattern of the sheet patterns, the lowermost sheet pattern having no additional sheet patterns of the active pattern therebelow; and
a source/drain pattern filling the source/drain recess from the first height to the second height, the source/drain pattern including at least one stacking fault spaced apart from the lower pattern, and not including any stacking faults at a height below a height of the lowermost sheet pattern from a bottom surface of the active pattern,
wherein the at least one stacking fault extends from a first point overlapping a sidewall of one of the sheet patterns in the second direction toward a top surface of the source/drain pattern or extends from the first point toward a bottom surface of the source/drain recess.
2 . The device as claimed in claim 1 , wherein the at least one stacking fault is spaced apart from the sheet patterns.
3 . The device as claimed in claim 1 , wherein the at least one stacking fault is in contact with at least one of the sheet patterns.
4 . The device as claimed in claim 1 , wherein the at least one stacking fault extends into at least one of the sheet patterns.
5 . The device as claimed in claim 1 , wherein:
the sheet patterns include a first sheet pattern which is the lowermost sheet pattern, a second sheet pattern, and a third sheet pattern, the first sheet pattern, second sheet pattern, and third sheet pattern sequentially stacked in the first direction, and
the at least one stacking fault is a first stacking fault extending between an extension line of a bottom surface of the first sheet pattern and an extension line of a top surface of the second sheet pattern without extending beyond the extension line of the bottom surface of the first sheet pattern and without extending beyond the extension line of the top surface of the second sheet pattern.
6 . The device as claimed in claim 1 , wherein:
the sheet patterns include a first sheet pattern which is the lowermost sheet pattern, a second sheet pattern, and a third sheet pattern, the first sheet pattern, second sheet pattern, and third sheet pattern sequentially stacked in the first direction, and
the at least one stacking fault is a first stacking fault extending between an extension line of a bottom surface of the second sheet pattern and an extension line of a top surface of the third sheet pattern without extending beyond the extension line of the bottom surface of the second sheet pattern and without extending beyond the extension line of the top surface of the third sheet pattern.
7 . The device as claimed in claim 1 , wherein:
the sheet patterns include a first sheet pattern which is the lowermost sheet pattern, a second sheet pattern, and a third sheet pattern sequentially stacked in the first direction, and
the at least one stacking fault is a first stacking fault between an extension line of a bottom surface of the third sheet pattern and the top surface of the source/drain pattern.
8 . The device as claimed in claim 1 , wherein the source/drain recess includes at least one extension area, a dimension in the second direction of each extension area of the at least one extension area increases and then decreases as the extension area extends away from the lower pattern.
9 . The device as claimed in claim 1 , wherein each of the first and second gate structures includes an inner spacer between ones of the sheet patterns that are adjacent to each other in the first direction, at least a portion of the source/drain recess being defined by the inner spacer.
10 . The device as claimed in claim 1 , wherein a dimension in the second direction of the source/drain recess is constant as the source/drain recess extends away from the lower pattern.
11 . The device as claimed in claim 1 , wherein the at least one stacking fault includes:
a first stacking fault having a positive slope relative to a top surface of the lower pattern; and
a second stacking fault having a negative slope relative to the top surface of the lower pattern, the first stacking fault and the second stacking fault being in contact with each other, crossing each other, the first stacking fault extending from a sidewall of a first one of the sheet patterns to a sidewall of a second one of the sheet patterns separated from the first one of the sheet patterns in the second direction, and the second stacking fault extending from a sidewall of a third one of the sheet patterns to a sidewall of a fourth one of the sheet patterns separated from the third one of the sheet patterns in the second direction.
12 . A semiconductor device, comprising:
an active pattern including a lower pattern and sheet patterns above the lower pattern, the sheet patterns being spaced apart from the lower pattern in a first direction which is a vertical direction;
a gate structure on the lower pattern, the gate structure surrounding the sheet patterns and extending in a second direction which is a horizontal direction, the gate structure including a gate electrode;
a source/drain recess within the active pattern and on at least one side of the gate structure, the source/drain recess including an extension area between the lower pattern and the sheet patterns or between adjacent ones of the sheet patterns in the first direction, and a dimension in a third direction of the extension area increasing and then decreasing as the extension area extends away from the lower pattern; and
a source/drain pattern filling the source/drain recess, the source/drain pattern extending within the source/drain recess vertically from a first height where the lower pattern is located to a second height of an uppermost sheet pattern of the sheet patterns, the source/drain pattern including at least one stacking fault at a vertical height above a vertical height of a top surface of the lower pattern, and the source/drain pattern including no stacking faults at a vertical height below a lowermost sheet pattern of the active pattern,
wherein the at least one stacking fault extends from a first point overlapping a sidewall of one of the sheet patterns in the third direction toward a top surface of the source/drain pattern or extends from the first point toward a bottom surface of the source/drain recess.
13 . The device as claimed in claim 12 , wherein the sheet patterns include a first sheet pattern, a second sheet pattern, and a third sheet pattern sequentially stacked in the first direction, and
wherein:
the at least one stacking fault includes a first stacking fault that extends from a sidewall of the first sheet pattern or from a point spaced apart from the sidewall of the first sheet pattern in the third direction in an inclined manner toward the top surface of the source/drain pattern, or
the at least one stacking fault includes a second stacking fault that extends from a sidewall of the second sheet pattern or from a point spaced apart from the sidewall of the second sheet pattern in the third direction in an inclined manner toward a bottom surface of the source/drain recess.
14 . The device as claimed in claim 12 , wherein the sheet patterns include a first sheet pattern, a second sheet pattern, and a third sheet pattern sequentially stacked in the first direction, and
wherein:
the at least one stacking fault includes a first stacking fault that extends from a sidewall of the second sheet pattern or from a point spaced apart from the sidewall of the second sheet pattern in the third direction in an inclined manner toward the top surface of the source/drain pattern, or
the at least one stacking fault includes a second stacking fault that extends from a sidewall of the third sheet pattern or from a point spaced apart from the sidewall of the third sheet pattern in the third direction in an inclined manner toward the bottom surface of the source/drain recess.
15 . The device as claimed in claim 12 , wherein:
the sheet patterns include a first sheet pattern, a second sheet pattern, and a third sheet pattern sequentially stacked in the first direction, and
the at least one stacking fault includes a first stacking fault that extends from a sidewall of the third sheet pattern or from a point spaced apart from the sidewall of the third sheet pattern in the third direction in an inclined manner toward the top surface of the source/drain pattern.
16 . The device as claimed in claim 12 , wherein the at least one stacking fault includes a first stacking fault that extends from a sidewall of the gate structure or from a point spaced from the sidewall of the gate structure in the third direction in an inclined manner toward the top surface of the source/drain pattern or the bottom surface of the source/drain recess.
17 . The device as claimed in claim 12 , wherein the at least one stacking fault extends into at least one of the sheet patterns.
18 . The device as claimed in claim 12 , wherein the gate structure further includes an inner spacer in the extension area.
19 . The device as claimed in claim 12 ,
wherein the source/drain recess is a first source/drain recess on a first side of the gate structure and the source/drain pattern is a first source/drain pattern filling the first source/drain recess, and
further comprising a second source/drain recess on a second side of the gate structure and a second source/drain pattern filling the second source/drain recess,
wherein the at least one stacking fault includes a first stacking fault in the first source/drain pattern and a second stacking fault in the second source/drain pattern, the first stacking fault including a first-first stacking fault and a first-second stacking fault crossing each other, and the second stacking fault including a second-first stacking fault and a second-second stacking fault not crossing each other but meeting each other.
20 . A semiconductor device, comprising:
a first active pattern including a first lower pattern and first sheet patterns above the first lower pattern, the first sheet patterns being spaced apart from the first lower pattern in a first direction which is a vertical direction;
a second active pattern including a second lower pattern and second sheet patterns, the second sheet patterns being spaced apart from the second lower pattern in the first direction;
a first gate structure on the first lower pattern and disposed to include a portion between the first lower pattern and the first sheet patterns, the first gate structure surrounding the first sheet patterns and extending in a second direction;
a second gate structure on the second lower pattern and disposed to include a portion between the second lower pattern and the second sheet patterns, the second gate structure surrounding the second sheet patterns and extending in the second direction;
a first source/drain recess in the first active pattern and on at least one side of the first gate structure;
a second source/drain recess in the second active pattern and on at least one side of the second gate structure;
a first source/drain pattern filling the first source/drain recess, the first source/drain pattern including a stacking fault at a height above a height of the first lower pattern, and not including any stacking faults at the height of the portion of the first gate structure between the first lower pattern and the first sheet pattern; and
a second source/drain pattern filling the second source/drain recess,
wherein the stacking fault extends from a first point overlapping a sidewall of one of the first sheet patterns in a third direction toward a top surface of the first source/drain pattern or extends from the first point toward a bottom surface of the first source/drain recess.