Method for manufacturing optoelectronic devices
An optoelectronic device is manufactured by an epitaxial growth, on each first layer of many first layers spaced apart from each other on a first support, wherein the first is made of a first semiconductor material, of a second layer made of a second semiconductor material. A further epitaxial growth is made on each second layer of a stack of semiconductor layers. Each stack includes a third layer made of a third semiconductor material in physical contact with the second layer. Each stack is then separated from the first layer by removing the second layer using an etching that is selective simultaneously over both the first and third semiconductor materials. Each stack is then transferred onto a second support. Each of the first and third semiconductor materials is one of a III-V compound or a II-VI compound.
1 . A manufacturing method, comprising:
providing a plurality of first layers covering a first support;
wherein each first layer is made of a first semiconductor material;
wherein the first layers are spaced apart from each other;
epitaxially growing, on each first layer, a second layer made of a second semiconductor material;
epitaxially growing, on each second layer, a stack of semiconductor layers;
wherein said stack of semiconductor layers comprises a third layer made of a third semiconductor material in physical contact with the second layer;
etching the second layer to separate each stack of semiconductor layers from the first layer;
wherein said etching is selective simultaneously over both the first and third semiconductor materials; and
transferring each separated stack of semiconductor layers onto a second support;
wherein each of the first and third semiconductor materials is one of a III-V compound or a II-VI compound.
2 . The method according to claim 1 , further comprising, after separating, reusing the first support covered with the plurality of first layers to repeat the steps of:
epitaxially growing, on each first layer, the second layer;
epitaxially growing, on each second layer, the stack of semiconductor layers;
separating each stack of semiconductor layers from the first layer by etching the second layer; and
transferring each separated stack of semiconductor layers onto the second support.
3 . The method according to claim 1 , wherein the second semiconductor material is one of a ternary compound or a quaternary compound.
4 . The method according to claim 1 , wherein said etching is a wet etching of the second layer, said wet etching being is selective over the first and third semiconductor materials.
5 . The method according to claim 1 , wherein lattice parameters of the first, second, and third semiconductor materials are equal to within 0.1%.
6 . The method according to claim 1 , wherein each stack of semiconductor layers further comprises at least one fourth layer made of a fourth semiconductor material, and wherein said etching is selective simultaneously over the first, third, and fourth semiconductor materials.
7 . The method according to claim 1 , further comprising:
forming the second support as a wafer comprising a plurality of electronic circuits; and
wherein transferring comprises covering each electronic circuit with one stack of semiconductor layers.
8 . The method according to claim 7 , further comprising cutting the wafer to separate the electronic circuits from each other, wherein each electronic circuit is covered with one stack of semiconductor layers.
9 . The method according to claim 7 , wherein each stack of semiconductor layers forms an optoelectronic component.
10 . The method according to claim 9 , wherein the optoelectronic component is a photodiode.
11 . The method according to claim 9 , wherein the optoelectronic component is a light-emitting diode.
12 . The method according to claim 7 , wherein forming the second support comprises providing an oxide layer extending over the plurality of electronic circuits and wherein transferring comprises bonding each stack of semiconductor layers to said oxide layer.
13 . An intermediate product, comprising:
a first support;
a plurality of first layers on said first support spaced apart from one another;
wherein each first layer is made of a first semiconductor material;
a second layer made of a second material on each first layer;
wherein said second layer is made of a second semiconductor material epitaxially coupled to the first layer;
a stack of semiconductor layers in physical contact with each second layer;
wherein each stack of semiconductor layers comprises a third layer;
wherein said third layer is made of a third semiconductor material epitaxially coupled to the second layer;
wherein each of the first and third semiconductor materials is a III-V compound or a II-VI compound; and
wherein the second semiconductor material is selectively etchable simultaneously over both the first and third semiconductor materials.
14 . The intermediate product according to claim 13 , wherein each stack further comprises a fourth layer made of a fourth semiconductor material, and wherein the second semiconductor material is selectively etchable simultaneously over the first, third, and fourth semiconductor materials.