Semiconductor integrated circuit device
A semiconductor integrated circuit device including standard cells including fin transistors includes, at a cell row end, a cell-row-terminating cell that does not contribute to a logical function of a circuit block. The cell-row-terminating cell includes a plurality of fins extending in an X direction. Ends of the plurality of fins on the inner side of the circuit block are near a gate structure placed at a cell end and do not overlap with the gate structure in a plan view, and ends of the plurality of fins on an outer side of the circuit block overlap with any one of a gate structure in a plan view.
1. A semiconductor integrated circuit device comprising
a circuit block including a cell row having a plurality of cells arranged in a first direction, wherein
the cell row includes:
a cell-row-terminating cell that does not contribute to a logical function of the circuit block disposed at a first end of the cell row, and
a first cell that is adjacent to the cell-row terminating cell in the first direction; and
the cell-row-terminating cell includes:
a plurality of nanowires extending in the first direction,
a plurality of pads connected to the plurality of nanowires of the cell-row terminating cell, and
a plurality of gate structures extending in a second direction perpendicular to the first direction, including a first gate structure placed at a cell end on an inner side of the circuit block, and a second gate structure adjacent to the first gate structure in the first direction; and
the first cell includes:
a plurality of nanowires extending in the first direction,
a plurality of pads connected to the plurality of nanowires of the first cell and facing the plurality of pads of the cell-row-terminating cell, and
a third gate structure adjacent to the first gate structure in the first direction.
2. The semiconductor integrated circuit device of claim 1 , wherein
the plurality of pads of the cell-row-terminating cell are located between the first gate structure and the second gate structure, and
the plurality of pads of the first cell are located between the first gate structure and the third gate structure.
3. The semiconductor integrated circuit device of claim 1 , wherein
end of the plurality of pads of the cell-row-terminating cell on the inner side of the circuit block do not overlap with the first gate structure in a plan view.
4. The semiconductor integrated circuit device of claim 3 , wherein
end of the plurality of pads of the first cell on the outer side of the circuit block do not overlap with the first gate structure in a plan view.
5. The semiconductor integrated circuit device of claim 1 , wherein
the first cell contributes to the logical function of the circuit block.
6. The semiconductor integrated circuit device of claim 1 , wherein
the third, first and second gate structures are arranged at a uniform pitch.
7. The semiconductor integrated circuit device of claim 1 , wherein
the first gate structure is a dummy gate.
8. The semiconductor integrated circuit device of claim 1 , wherein
the cell-row-terminating cell further includes a fourth gate structure placed at a cell end on an outer side of the circuit block.
9. The semiconductor integrated circuit device of claim 8 , wherein
the fourth gate structure is a dummy gate.