Semiconductor structure with vertical connection structure and manufacturing method thereof
A semiconductor structure includes a first tier, a redistribution circuit structure, and a second tier. The first tier includes at least one first die. The redistribution circuit structure is disposed on the first tier and electrically coupled to the at least one first die, where the redistribution circuit structure has a multi-layer structure and includes a vertical connection structure continuously extending from a first side of the redistribution circuit structure to a second side of the redistribution circuit structure, and the first side is opposite to the second side along a stacking direction of the first tier and the redistribution circuit structure. The second tier includes a plurality of second dies, and is disposed on and electrically coupled to the redistribution circuit structure. The redistribution circuit structure is disposed between the first tier and the second tier, where the at least one first die is electrically connected to and electrically communicated with the plurality of second dies through the redistribution circuit structure, and the plurality of second dies are electrically connected to and electrically communicated with each other through the redistribution circuit structure.
1 . A semiconductor structure, comprising:
a first tier, comprising at least one first die;
a redistribution circuit structure, disposed on the first tier and electrically coupled to the at least one first die, wherein the redistribution circuit structure has a multi-layer structure and comprises a vertical connection structure continuously extending from a first side of the redistribution circuit structure to a second side of the redistribution circuit structure, and the first side is opposite to the second side along a stacking direction of the first tier and the redistribution circuit structure, wherein in a cross section of the semiconductor structure along the stacking direction, the vertical connection structure has a single central line penetrating therethrough; and
a second tier, comprising a plurality of second dies, disposed on and electrically coupled to the redistribution circuit structure, wherein the redistribution circuit structure is disposed between the first tier and the second tier, wherein the at least one first die is electrically connected to and electrically communicated with the plurality of second dies through the redistribution circuit structure, and the plurality of second dies are electrically connected to and electrically communicated with each other through the redistribution circuit structure.
2 . The semiconductor structure of claim 1 , further comprising:
a bonding structure, disposed on the second tier and electrically connected to the plurality of second dies, wherein the second tier is disposed between and electrically couples the redistribution circuit structure and the bonding structure; and
a plurality of conductive terminals, disposed on and electrically connected to the bonding structure, wherein the bonding structure is disposed between the plurality of conductive terminals and the second tier, and the plurality of conductive terminals are electrically coupled to the plurality of second dies through the bonding structure.
3 . The semiconductor structure of claim 2 , wherein the at least one first die comprises a plurality of first dies, wherein the plurality of first dies are electrically connected to and electrically communicated with each other through the redistribution circuit structure, the plurality of first dies are electrically connected to and electrically communicated with the plurality of second dies through the redistribution circuit structure, and the plurality of second dies are electrically connected to and electrically communicated with each other through the redistribution circuit structure.
4 . The semiconductor structure of claim 1 , further comprising:
a bonding structure, disposed on the first tier and electrically connected to the at least one first die, wherein the first tier is disposed between and electrically couples the redistribution circuit structure and the bonding structure; and
a plurality of conductive terminals, disposed on and electrically connected to the bonding structure, wherein the bonding structure is disposed between the plurality of conductive terminals and the first tier, and the plurality of conductive terminals are electrically coupled to at least one first die through the bonding structure.
5 . The semiconductor structure of claim 4 , wherein the at least one first die comprises a plurality of first dies, wherein the plurality of first dies are electrically connected to and electrically communicated with each other through the redistribution circuit structure, the plurality of first dies are electrically connected to and electrically communicated with the plurality of second dies through the redistribution circuit structure, and the plurality of second dies are electrically connected to and electrically communicated with each other through the redistribution circuit structure.
6 . The semiconductor structure of claim 1 , wherein the plurality of second dies each have an active surface and a rear surface opposite to the active surface along the stacking direction,
wherein the active surfaces of the plurality of the second dies are facing towards the at least one first die, and the active surfaces of the plurality of the second dies are closer to the at least one first die than the rear surfaces are.
7 . The semiconductor structure of claim 1 , wherein the plurality of second dies each have an active surface and a rear surface opposite to the active surface along the stacking direction,
wherein the rear surfaces of the plurality of the second dies are facing towards the at least one first die, and the rear surfaces of the plurality of the second dies are closer to the at least one first die than the active surfaces are.
8 . The semiconductor structure of claim 1 , wherein the vertical connection structure penetrates through the multi-layer structure and in contact with the first tier and the second tier, and
in the cross section along the stacking direction, a shape of the vertical connection structure comprises a columnar shape with a planar sidewall.
9 . The semiconductor structure of claim 1 , wherein the vertical connection structure penetrates through the multi-layer structure and in contact with the first tier and the second tier, and
in the cross section along the stacking direction, a shape of the vertical connection structure comprises a columnar shape with a wave-shaped sidewall.
10 . A semiconductor structure, comprising:
a redistribution circuit structure, comprising:
a plurality of dielectric layers;
a plurality of horizontal connection structures, arranged alternatively with the plurality of dielectric layers, wherein the plurality of horizontal connection structures are electrically coupled to each other; and
a plurality of vertical connection structures, penetrating through the plurality dielectric layers and next to the plurality of horizontal connection structures;
a plurality of first dies, disposed over a first side of the redistribution circuit structure and each comprising a plurality of first connecting vias, wherein the plurality of first dies are electrically coupled to the redistribution circuit structure through the plurality of first connecting vias;
a first insulating encapsulation, laterally encapsulating the plurality of first dies;
a plurality of second dies, disposed over a second side the redistribution circuit structure and each comprising a plurality of second connecting vias and a plurality of through vias, wherein the plurality of second dies are electrically coupled to the redistribution circuit structure through the plurality of second connecting vias, and the first side is opposite to the second side;
a second insulating encapsulation, laterally encapsulating the plurality of second dies; and
a bonding structure, disposed on the second insulating encapsulation and electrically coupled to the plurality of second dies through the plurality of through vias, wherein the second insulating encapsulation is disposed between the redistribution circuit structure and the bonding structure, and the redistribution circuit structure is disposed between the first insulating encapsulation and the second insulating encapsulation.
11 . The semiconductor structure of claim 10 , the plurality of first dies are bond to and electrically coupled to the redistribution circuit structure by a plurality of joints interposed therebetween.
12 . The semiconductor structure of claim 10 , the plurality of second dies are bond to and electrically coupled to the redistribution circuit structure by a plurality of joints interposed therebetween.
13 . The semiconductor structure of claim 10 , wherein each vertical connection structure of a first group of the plurality of the vertical connection structures penetrates a respective one of the plurality of dielectric layer and electrically connects two adjacent horizontal connection structure respectively overlying and underlying the respective one of the plurality of dielectric layer.
14 . The semiconductor structure of claim 10 , wherein each vertical connection structure of a second group of the plurality of the vertical connection structures penetrates the redistribution circuit structure, and wherein in a cross section along a stacking direction of the first insulating encapsulation and the second insulating encapsulation,
a shape of each vertical connection structure of the second group of the plurality of the vertical connection structures comprises a columnar shape with a planar sidewall, or
a shape of each vertical connection structure of the third group of the plurality of the vertical connection structures comprises a columnar shape with a wave-shaped sidewall.
15 . The semiconductor structure of claim 10 ,
wherein each vertical connection structure of a second group of the plurality of the vertical connection structures penetrates the redistribution circuit structure, and in a cross section along a stacking direction of the first insulating encapsulation and the second insulating encapsulation, a shape of each vertical connection structure of the second group of the plurality of the vertical connection structures comprises a columnar shape with a planar sidewall, and
wherein each vertical connection structure of a third group of the plurality of the vertical connection structures penetrates the redistribution circuit structure, and in a cross section along a stacking direction of the first insulating encapsulation and the second insulating encapsulation, a shape of each vertical connection structure of the third group of the plurality of the vertical connection structures comprises a columnar shape with a wave-shaped sidewall.
16 . The semiconductor structure of claim 10 , wherein the plurality of first dies each have a first front surface exposing the plurality of first connecting vias and a first bottom surface opposite to the first front surface along a stacking direction of the first insulating encapsulation and the second insulating encapsulation, and the plurality of second dies each have a second front surface exposing the plurality of second connecting vias and a second bottom surface opposite to the second front surface along the stacking direction, wherein:
the second front surfaces of the plurality of the second dies are facing towards the plurality of the first dies, and the second front surfaces of the plurality of the second dies are closer to the first front surfaces of the plurality of the first dies than the second bottom surfaces are, or
the second bottom surfaces of the plurality of the second dies are facing towards the plurality of the first dies, and the second bottom surfaces of the plurality of the second dies are closer to the first front surfaces of the plurality of the first dies than the second front surfaces are.
17 . A method of manufacturing a semiconductor structure, comprising:
providing a first tier, a first tier comprising at least one first die;
forming a redistribution circuit structure, the redistribution circuit structure being over the first tier and electrically coupled to the at least one first die, wherein the redistribution circuit structure has a multi-layer structure and comprises a vertical connection structure continuously extending from a first side of the redistribution circuit structure to a second side of the redistribution circuit structure, the first side is opposite to the second side along a stacking direction of the first tier and the redistribution circuit structure, wherein in a cross section of the semiconductor structure along the stacking direction, the vertical connection structure has a single central line penetrating therethrough; and
providing a second tier comprising a plurality of second dies, the second tier being over and electrically coupled to the redistribution circuit structure, the redistribution circuit structure being disposed between the first tier and the second tier, wherein the at least one first die is electrically connected to and electrically communicated with the plurality of second dies through the redistribution circuit structure, and the plurality of second dies are electrically connected to and electrically communicated with each other through the redistribution circuit structure.
18 . The method of claim 17 , wherein providing the first tier is prior to forming the redistribution circuit structure and providing the second tier, and forming the redistribution circuit structure is prior to the second tier, wherein:
forming the redistribution circuit structure comprises:
forming the multi-layer structure over the first tier; and
forming the vertical connection structure in the multi-layer structure, wherein in the cross section along the stacking direction, a shape of the vertical connection structure comprises a columnar shape with a planar sidewall or a columnar shape with a wave-shaped sidewall,
providing the second tier comprises:
providing the plurality of second dies over the redistribution circuit structure;
bonding the plurality of second dies to the redistribution circuit structure through a flip-chip bonding process or a bonding process of a metal-to-metal bonding and a dielectric-to-dielectric bonding; and
laterally encapsulating the plurality of second dies in an insulating encapsulation.
19 . The method of claim 17 , wherein providing the second tier is prior to forming the redistribution circuit structure and providing the first tier, and forming the redistribution circuit structure is prior to providing the first tier, wherein:
forming the redistribution circuit structure comprises:
forming the multi-layer structure over the second tier; and
forming the vertical connection structure in the multi-layer structure, wherein in the cross section along the stacking direction, a shape of the vertical connection structure comprises a columnar shape with
a planar sidewall or a columnar shape with a wave-shaped sidewall,
providing the first tier comprises:
providing the at least one first die over the redistribution circuit structure;
bonding the at least one first die to the redistribution circuit structure through a flip-chip bonding process or a bonding process of a metal-to-metal bonding and a dielectric-to-dielectric bonding; and
laterally encapsulating the at least one first die in an insulating encapsulation.
20 . The method of claim 17 , wherein forming the redistribution circuit structure is prior to providing the first tier and providing the second tier, wherein:
forming the redistribution circuit structure comprises:
forming the multi-layer structure; and
forming the vertical connection structure in the multi-layer structure, wherein in the cross section along the stacking direction, a shape of the vertical connection structure comprises a columnar shape with
a planar sidewall or a columnar shape with a wave-shaped sidewall, providing the first tier comprises:
providing the at least one first die over a first surface of the redistribution circuit structure;
bonding the at least one first die to the redistribution circuit structure through a flip-chip bonding process or a bonding process of a metal-to-metal bonding and a dielectric-to-dielectric bonding; and
laterally encapsulating the at least one first die in an insulating encapsulation, and
providing the second tier comprises:
providing the plurality of second dies over a second surface of the redistribution circuit structure, the second surface being opposite to the first surface along the stacking direction;
bonding the plurality of second dies to the redistribution circuit structure through a flip-chip bonding process or a bonding process of a metal-to-metal bonding and a dielectric-to-dielectric bonding; and
laterally encapsulating the plurality of second dies in an insulating encapsulation.