IP Library Granted Patent US 12,745,684
Granted Patent B2
US 12,745,684 · App. 18/174,992 · Granted Sep 22, 2026

Semiconductor package and method of manufacturing the same

Inventors: Choongbin Yim (Suwon-si, KR); Ji-Yong Park (Suwon-si, KR); Jin-Woo Park (Suwon-si, KR)
Assignee: Samsung Electronics Co., Ltd.
H10W90/701H10W74/111H10W70/09H10W70/60H10W90/00H10W90/724
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Quick Facts
Patent No.
US 12,745,684
App. No.
18/174,992
Granted
Sep 22, 2026
Kind
B2
Abstract

A semiconductor package includes a package substrate, substrate pads provided on a top surface of the package substrate, at least one core ball on at least one of the substrate pads, a redistribution substrate provided on the top surface of the package substrate, and a semiconductor chip mounted on the redistribution substrate. The redistribution substrate is electrically connected to the package substrate through a plurality of solder balls provided on a bottom surface of the redistribution substrate. The at least one core ball is electrically connected to the redistribution substrate. A diameter of the at least one core ball is greater than a diameter of each of the plurality of solder balls.

Claims (60)

1 . A semiconductor package comprising:

a package substrate;

a plurality of substrate pads on a top surface of the package substrate;

at least one core ball on at least one of the plurality of substrate pads;

a redistribution substrate on the top surface of the package substrate; and

a semiconductor chip mounted on the redistribution substrate,

wherein the redistribution substrate is electrically connected to the package substrate by a plurality of solder balls on a bottom surface of the redistribution substrate,

wherein the at least one core ball is electrically connected to the redistribution substrate,

wherein a diameter of the at least one core ball is greater than a diameter of each of the solder balls, and

wherein the at least one core ball is between at least two of the plurality of solder balls.

2 . The semiconductor package of claim 1 , wherein the at least one core ball includes a peripheral portion and a core, and

wherein the peripheral portion is on the core.

3 . The semiconductor package of claim 1 , wherein the at least one core ball and the plurality of solder balls are spaced apart from each other.

4 . The semiconductor package of claim 1 , wherein the at least one core ball comprises a plurality of core balls, and

wherein each of the plurality of solder balls is between at least two of the plurality of core balls.

5 . The semiconductor package of claim 1 , wherein the at least one core ball is on a corner portion of the redistribution substrate.

6 . The semiconductor package of claim 1 , wherein the at least one core ball is at a central portion of the redistribution substrate.

7 . The semiconductor package of claim 1 , further comprising:

a molding layer on the semiconductor chip on the redistribution substrate.

8 . The semiconductor package of claim 1 , wherein a diameter of the at least one core ball ranges from 5 times to 50 times a diameter of each of the plurality of solder balls.

9 . The semiconductor package of claim 8 , wherein the diameter of the at least one core ball ranges from 100 μm to 500 μm, and

wherein the diameter of each of the plurality of solder balls ranges from 10 μm to 50 μm.

10 . The semiconductor package of claim 2 , wherein the core includes copper or a polymer, and

wherein the peripheral portion includes a solder material.

11 . The semiconductor package of claim 1 , further comprising:

an underfill layer between the bottom surface of the redistribution substrate and the top surface of the package substrate,

wherein the underfill layer is in a space between the core ball and the solder balls.

12 . The semiconductor package of claim 1 , wherein the plurality of solder balls are connected to a plurality of under bump pads on the bottom surface of the redistribution substrate, and

wherein the at least one core ball is connected to a ball pad on the bottom surface of the redistribution substrate.

13 . A semiconductor package comprising:

a package substrate;

a semiconductor chip on the package substrate;

a redistribution substrate between the package substrate and the semiconductor chip;

a plurality of first solder balls and a plurality of second solder balls between the redistribution substrate and the package substrate; and

a plurality of under bump pads between the redistribution substrate and the first solder balls,

wherein the redistribution substrate is electrically connected to the package substrate through the plurality of first solder balls, the plurality of second solder balls and the plurality of under bump pads, and

wherein a diameter of each of the plurality of second solder balls is greater than a diameter of each of the plurality of first solder balls,

wherein each of the second solder balls includes a peripheral portion and a core, and

wherein the peripheral portion is on the core.

14 . The semiconductor package of claim 13 , wherein each of the plurality of second solder balls is on a corner or central portion of the redistribution substrate.

15 . The semiconductor package of claim 13 , wherein each of the plurality of second solder balls includes a core.

16 . The semiconductor package of claim 13 , wherein the diameter of each of the plurality of second solder balls ranges from 5 times to 50 times the diameter of each of the plurality of first solder balls.

17 . A semiconductor package comprising:

a package substrate comprising a circuit board;

a plurality of substrate pads on a top surface of the circuit board of the package substrate;

a plurality of external pads on a bottom surface of the circuit board of the package substrate;

a semiconductor chip on the package substrate, the semiconductor chip comprising a plurality of chip pads on a bottom surface of the semiconductor chip;

a redistribution substrate between the package substrate and the semiconductor chip, the redistribution substrate electrically connected to the plurality of chip pads;

a plurality of under bump pads and a plurality of ball pads on a bottom surface of the redistribution substrate;

a plurality of solder balls on bottom surfaces of the plurality of under bump pads; and

a plurality of core balls on bottom surfaces of the plurality of ball pads,

wherein the plurality of solder balls and the plurality of core balls are connected to the plurality of substrate pads of the package substrate,

wherein the redistribution substrate is electrically connected to the package substrate through the plurality of solder balls and the plurality of core balls,

wherein the plurality of core balls are on corners of the bottom surface of the redistribution substrate,

wherein each of the plurality of solder balls is between at least two of the plurality of core balls, and

wherein a diameter of each of the plurality of core balls is greater than a diameter of each of the plurality of solder balls.

18 . The semiconductor package of claim 17 , wherein each of the plurality of core balls includes a peripheral portion and a core, and

wherein the peripheral portion is on the core.

19 . The semiconductor package of claim 17 , wherein the diameter of each of the plurality of core balls ranges from 5 times to 50 times the diameter of each of the plurality of solder balls.

20 . The semiconductor package of claim 17 , wherein the plurality of substrate pads are on a top surface of the package substrate, the plurality of external pads are on a bottom surface of the package substrate, and no semiconductor chip is disposed between the top surface of the package substrate and the bottom surface of the package substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 27, 2023
From: YIM, CHOONGBIN; PARK, JI-YONG; PARK, JIN-WOO
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 062810/0596 →
Priority Claims (1)
KR 10-2022-0071776 · Jun 13, 2022 · national
Continuity (1)
Related Publication 20230402358A1 · Dec 14, 2023
References Cited (18)
US 7038144B2 · Yasuda et al. · 2006 [cited by applicant]
US 9484331B2 · Paek et al. · 2016 [cited by applicant]
US 9875969B2 · Braunisch et al. · 2018 [cited by applicant]
US 10679930B2 · Lee · 2020 [cited by examiner]
US 11854948B2 · Kim · 2023 [cited by examiner]
US 20050104222A1 · Jeong et al. · 2005 [cited by applicant]
US 20130264708A1 · Hiwatashi · 2013 [cited by applicant]
US 20140151863A1 · Kim et al. · 2014 [cited by applicant]
US 20220059437A1 · Kim · 2022 [cited by examiner]
US 20220415809A1 · Kim et al. · 2022 [cited by applicant]
US 20230035026A1 · Kim · 2023 [cited by examiner]
JP 2007027576A · 2007 [cited by applicant]
KR 1020070052043A · 2007 [cited by applicant]
KR 1020160026168A · 2016 [cited by applicant]
KR 1020210126228A · 2021 [cited by applicant]
KR 1020220022602A · 2022 [cited by applicant]
KR 1020230000725A · 2023 [cited by applicant]
KR 1020230018090 · 2023 [cited by applicant]