Granted Patent B2

US 12,487,254 · App. 18/182,434 · Granted Dec 2, 2025

Inventor: Shixi Louis Liu (Hooksett, NH)

Assignee: Allegro MicroSystems, LLC

G01R15/202H01L23/49575G01R15/207G01R19/0092G01R33/072

Abstract

Claims (24)

1 . A current sensor integrated circuit package comprising:

a primary conductor having an input portion into which a current flows, an output portion from which the current flows, and an exposed portion, wherein the input portion has a reduced area edge and the output portion has a reduced area edge;

a secondary lead having an exposed portion spaced from the exposed portion of the primary conductor by an isolation distance of at least 2.0 mm, wherein an elongated portion of the secondary lead is offset with respect to the exposed portion of the secondary lead;

a semiconductor die disposed adjacent to the primary conductor and positioned on an insulator portion;

at least one magnetic field sensing element supported by the semiconductor die, wherein the at least one magnetic field sensing element is configured to generate a signal corresponding to the current that flows in the primary conductor; and

a package body enclosing the semiconductor die and a portion of the primary conductor and comprising a first cutout in a first side edge configured to expose the reduced area edge of the input portion of the primary conductor and a second cutout on a second side edge configured to expose the reduced area edge of the output portion of the primary conductor, wherein the first side edge of the package body is substantially parallel with respect to the second side edge of the package body.

2 . The current sensor integrated circuit package of claim 1 wherein the reduced area edge of the input portion of the primary conductor is exposed at the first side edge of the package body, wherein the reduced area edge of the output portion of the primary conductor is exposed at the second side edge of the package body, and wherein the elongated portion of the secondary lead extends in a direction parallel to the first and second side edges of the package body.

3 . The current sensor integrated circuit package of claim 2 wherein the reduced area edge of the input portion of the primary conductor does not extend beyond the first side edge of the package body and wherein the reduced area edge of the output portion of the primary conductor does not extend beyond the second side edge of the package body.

4 . The current sensor integrated circuit package of claim 1 wherein the package body is singulated along the reduced area edge of the input portion of the primary conductor and along the reduced area edge of the output portion of the primary conductor.

5 . The current sensor integrated circuit package of claim 1 wherein the secondary lead has a substantially constant thickness and wherein the secondary lead is offset with respect to the exposed portion in a direction of a thickness of the secondary lead.

6 . The current sensor integrated circuit package of claim 1 wherein the isolation distance is at least 4.0 mm.

7 . The current sensor integrated circuit package of claim 1 wherein the isolation distance is at least 7.2 mm.

8 . The current sensor integrated circuit package of claim 1 wherein the secondary lead comprises a first secondary lead providing an output connection of the current sensor integrated circuit package, a second secondary lead providing a voltage input connection of the current sensor integrated circuit package, and a third secondary lead providing a ground connection of the current sensor integrated circuit package.

9 . The current sensor integrated circuit package of claim 1 further comprising a front-end amplifier supported by the semiconductor die, wherein the at least one magnetic field sensing element is coupled to the front-end amplifier.

10 . The current sensor integrated circuit package of claim 1 comprising at least two magnetic field sensing elements.

11 . The current sensor integrated circuit package of claim 10 wherein the at least two magnetic field sensing elements are Hall effect elements.

12 . The current sensor integrated circuit package of claim 11 wherein the at least two magnetic field sensing elements are coupled to provide a differential output.

13 . The current sensor integrated circuit package of claim 1 wherein the secondary lead provides a fault signal connection of the current sensor integrated circuit package.

14 . The current sensor integrated circuit package of claim 1 further comprising a wafer backside coating material on a back of the semiconductor die.

15 . The current sensor integrated circuit package of claim 14 further comprising a second wafer backside coating material on the back of the semiconductor die.

16 . The current sensor integrated circuit package of claim 1 wherein the exposed portion of the primary conductor is substantially orthogonal to the first side edge of the package body and the second side edge of the package body.

17 . The current sensor integrated circuit of claim 1 wherein the insulator portion extends beyond an edge of the primary conductor in a direction towards the secondary lead.

18 . The current sensor integrated circuit of claim 17 wherein the insulator portion extends beyond the edge of the primary conductor in the direction towards the secondary lead by at least 0.1 mm.

19 . The current sensor integrated circuit of claim 17 wherein the insulator portion extends beyond the edge of the primary conductor in the direction towards the secondary lead by at least 0.4 mm.

Assignments (2)

Continuity (4)

References Cited (139)