Granted Patent B2

US 12,286,710 · App. 18/208,232 · Granted Apr 29, 2025

Inventors: Kaustav Banerjee (Goleta, CA); Ravi Iyengar (Milpitas, CA); Satish Sundar (San Jose, CA); Nalin Rupesinghe (Cambridge, GB)

Assignee: Destination 2D Inc.

C23C8/64

Abstract

Claims (20)

1. A method for migration of a deposition material across a diffusion couple deposited on a substrate to a substrate surface comprising:

using a reactor system to facilitate the migration of one or more diffusion materials across a diffusion couple to a substrate by

applying a specified pressure to facilitate the migration of the one or more diffusion materials across the diffusion couple to the substrate, wherein the specified pressure has a value between 14.5 psi and 125 psi; and

applying a temperature to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate, wherein a heatable top disk is controlled at a temperature between 25° C. and 500° C. and a heatable bottom disk is controlled at a temperature between 25° C. and 500°° C., and wherein graphene is formed on the substrate surface.

2. The method of claim 1 ,

wherein the reactor system uses a mechanical means to apply the pressure to facilitate the migration of the one or more diffusion materials across the diffusion couple to the substrate, and

wherein the mechanical means comprise a pneumatic mechanical means, a hydraulic mechanical means, or a piezoelectric array.

3. The method of claim 1 , wherein the reactor system uses a flexible pressurized membrane to apply the pressure to facilitate the migration of the materials across a diffusion couple to the substrate.

4. The method of claim 1 , wherein the step of applying a temperature to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate comprises:

using a resistive heating through a direct contact or an indirect contact to apply the temperature to facilitate the migration of the one or more diffusion materials across the diffusion couple to the substrate.

5. The method of claim 1 , wherein the step of applying a temperature to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate comprises:

using a heated gas to apply the temperature to facilitate the migration of the one or more diffusion materials across the diffusion couple to the substrate.

6. The method of claim 1 , wherein the step of applying a temperature to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate comprises:

using a radiative heating to apply the temperature to facilitate the migration of the one or more diffusion materials across the diffusion couple to the substrate.

7. The method of claim 1 , wherein the step of applying a temperature to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate comprises:

using an inductive heating of a carrier on which the substrate sits or a top movable disk to facilitate the migration of the one or more diffusion materials across a diffusion couple to the substrate;

using an approximate compliance in one or more mechanisms for a direct pressure application to ensure a uniform pressure on the substrate and to prevent a breakage of the substrate;

using a compliant high thermal conductivity material at the pressure application surfaces to ensure uniform application of pressure without breakage of the substrate;

and

using a plurality of reactor configurations capable of processing multiple substrates for batch processing of the substrates.

Assignments (1)

Continuity (3)

References Cited (40)