IP Library › Granted Patent US 12,717,494
Granted Patent B2
US 12,717,494 · App. 18/220,489 · Granted Aug 25, 2026

Flash memory for reducing reliability degradation of OS data due to SMT process and method for operating the same

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Quick Facts
Patent No.
US 12,717,494
App. No.
18/220,489
Filed
Jul 11, 2023
Granted
Aug 25, 2026
Kind
B2
Examiner
DARE, RYAN A
Art Unit
2132
USPC
711/103
Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 13, 2023
From: AHN, HYOJIN; SHIN, DONGWOO; KIM, SEONGKUK; LEE, CHANGJUN; HONG, SUNGJUN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 064242/0195 →
Priority Claims (1)
KR 10-2022-0147066 · Nov 7, 2022 · national
Continuity (1)
Related Publication 20240152280A1 · May 9, 2024
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