Three-dimensional semiconductor integrated circuit device including inter-die interface

1 . A three-dimensional semiconductor integrated circuit device comprising:

a top die comprising:

a plurality of micro cells provided on a first side of the top die;

a plurality of micro bumps provided on a second side of the top die; and

wiring patterns connecting the plurality of micro cells to the plurality of micro bumps; and

a bottom die comprising a plurality of macro cells provided on a first side of the bottom die,

wherein the plurality of macro cells are electrically connected to the plurality of micro bumps, and

wherein a size of a region comprising the plurality of micro cells is smaller than a size of a region comprising the plurality of micro bumps.

2 . The three-dimensional semiconductor integrated circuit device of claim 1 , wherein a size of each micro cell of the plurality of micro cells is smaller than a size of the plurality of macro cells.

3 . The three-dimensional semiconductor integrated circuit device of claim 2 , wherein a spacing between adjacent micro cells of the plurality of micro cells is shorter than a spacing between adjacent micro bumps of the plurality of micro bumps.

4 . The three-dimensional semiconductor integrated circuit device of claim 1 , wherein an arrangement of the plurality of micro cells corresponds to an arrangement of the plurality of micro bumps.

5 . The three-dimensional semiconductor integrated circuit device of claim 1 , wherein an arrangement of the plurality of micro bumps is different from an arrangement of the plurality of micro cells.

6 . The three-dimensional semiconductor integrated circuit device of claim 1 , wherein an arrangement of the plurality of micro bumps corresponds to an arrangement of the plurality of macro cells.

7 . The three-dimensional semiconductor integrated circuit device of claim 1 , wherein the plurality of micro cells are respectively connected to the plurality of micro bumps, and

wherein the plurality of micro cells are configured to transmit and receive different signals, respectively.

8 . The three-dimensional semiconductor integrated circuit device of claim 7 , wherein the wiring patterns connecting the plurality of micro cells to the plurality of micro bumps comprise a shield structure.

9 . The three-dimensional semiconductor integrated circuit device of claim 1 , wherein each micro cell of the plurality of micro cells comprises a re-timer.

10 . The three-dimensional semiconductor integrated circuit device of claim 9 , wherein a number of the re-timers connected to each micro cell of the plurality of micro cells corresponds to a length of a wiring path connected to each micro cell of the plurality of micro cells.

11 . A three-dimensional semiconductor integrated circuit device comprising:

a bottom die;

a top die stacked vertically on the bottom die; and

a template pattern configured as an interface for transmitting and receiving a signal between the top die and the bottom die,

wherein the top die comprises micro bumps provided on a bottom surface of the top die, and micro cells provided on a top surface of the top die, and

wherein the micro bumps and the micro cells are respectively connected to each other via a wiring pattern in a tree structure manner.

12 . The three-dimensional semiconductor integrated circuit device of claim 11 , wherein the three-dimensional semiconductor integrated circuit device is configured to place the template pattern in the top die and the bottom die, and then place a logic cell in each of the top die and the bottom die.

13 . The three-dimensional semiconductor integrated circuit device of claim 11 , wherein the template pattern comprises:

a top-connection region comprising the micro cells provided on the top surface of the top die;

a lower-connection region comprising the micro bumps provided on the bottom surface of the top die; and

the wiring pattern connecting the micro cells and the micro bumps to each other, respectively.

14 . The three-dimensional semiconductor integrated circuit device of claim 13 , wherein a size of the top-connection region is smaller than a size of the lower-connection region.

15 . The three-dimensional semiconductor integrated circuit device of claim 14 , wherein a spacing between adjacent micro cells of the micro cells is shorter than a spacing between adjacent micro bumps of the micro bumps.

16 . The three-dimensional semiconductor integrated circuit device of claim 14 , wherein a size of each micro cell of the micro cells is smaller than a size of each micro bump of the micro bumps.

17 . The three-dimensional semiconductor integrated circuit device of claim 13 , wherein the wiring pattern further comprises a shield structure.

18 . The three-dimensional semiconductor integrated circuit device of claim 11 , wherein the bottom die comprises a plurality of macro cells provided on a top surface of the bottom die, and

wherein the micro bumps are provided at positions corresponding to the plurality of macro cells, respectively.

19 . A three-dimensional semiconductor integrated circuit device comprising:

a top die comprising:

a top-connection region comprising a plurality of micro cells on a top surface of the top die;

a lower-connection region comprising a plurality of micro bumps on a bottom surface of the top die; and

a wiring pattern connecting the plurality of micro cells to the plurality of micro bumps; and

a bottom die stacked under the top die,

wherein the bottom die comprises a bottom-connection region comprising a plurality of macro cells on a top surface of the bottom die, and

wherein a size of the top-connection region is smaller than a size of the lower-connection region.

20 . The three-dimensional semiconductor integrated circuit device of claim 19 , wherein the top die comprises:

a logic cell provided in a remaining region other than the top-connection region on the top surface of the top die, and

wherein the logic cell is connected to the plurality of micro cells via the wiring pattern.